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BTA25H-800CW3G

Onsemi

BTA25H-800CW3G by Onsemi

BTA25H-800CW3G by Onsemi is a single TRIAC with 25A RMS current, 800V repetitive peak off-state voltage, and 35mA DC gate trigger current. Ideal for applications requiring isolated case connection, such as motor control systems or lighting dimmers.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,378 parts In-Stock

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Digiode

USA . 334 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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$2.287

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$4.573

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$4.161

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$3.750

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SupplyDigital Components

Austria . 8,231 parts In-Stock

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TANS Electronics

Latvia . 5,116 parts In-Stock

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Problanco Electronics

Mexico . 4,435 parts In-Stock

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Northwest PG Solutions

USA . 1,689 parts In-Stock

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Native Components

USA . 1,238 parts In-Stock

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of reliable and high-quality performance with the BTA25H-800CW3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products like this triode for alternating current (TRIAC) that offers exceptional value and benefits to customers. From household appliances to industrial controls, this TRIAC is versatile and efficient, providing seamless control and operation. Trust in Onsemi's reputation for excellence and choose the BTA25H-800CW3G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and thermal conductivity, making the product durable and reliable for long-term use.

Maximum DC Gate Trigger Current: 35 mA

High trigger current ensures reliable performance and efficient switching of the TRIAC.

Configuration: SINGLE

SINGLE configuration simplifies the wiring and installation process, making it user-friendly.

Package Shape: RECTANGULAR

RECTANGULAR shape allows for easy integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

THROUGH-HOLE terminals facilitate secure connections and ensure stable operation under different conditions.

Maximum Leakage Current: 15 mA

Low leakage current helps in reducing power wastage and improving the overall efficiency of the device.

No. of Terminals: 3

Having 3 terminals ensures proper connectivity and functionality, enhancing the performance of the TRIAC.

Package Style (Meter): FLANGE MOUNT

FLANGE MOUNT style provides easy mounting options and better mechanical stability for the device.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in harsh environments and under heavy loads.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 QUADRANT LOGIC LEVEL design ensures precise and efficient triggering of the TRIAC, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables the TRIAC to be used in extreme cold conditions without any performance issues.

Terminal Finish: TIN

TIN finish on terminals provides good conductivity and corrosion resistance, ensuring long-term reliability of the connections.

Terminal Position: SINGLE

SINGLE terminal position simplifies the circuit design and installation process, making it easier for users to incorporate the TRIAC.

Maximum RMS On-state Current: 25 A

High on-state current rating allows the TRIAC to handle heavy loads and high-power applications with ease and efficiency.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient and quick switching of the TRIAC, reducing power losses and improving performance.

Case Connection: ISOLATED

ISOLATED case connection provides safety and protection against voltage spikes and short circuits, enhancing the reliability of the TRIAC.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating ensures reliable and stable performance of the TRIAC under high-voltage conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High rate of rise of off-state voltage allows the TRIAC to respond quickly to changes in voltage levels, ensuring efficient switching and protection against voltage spikes.

Maximum Holding Current: 50 mA

High holding current ensures the TRIAC remains in the on-state even under varying load conditions, providing consistent performance and reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA25H-800CW3G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

15 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA25H-800CW3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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