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TIC226N

Texas Instruments

TIC226N by Texas Instruments

TIC226N by Texas Instruments is a TRIAC with 8A RMS on-state current, 800V repetitive peak off-state voltage, and 110°C max operating temp. Ideal for AC power control applications due to its 50mA max DC gate trigger current and -40°C min operating temp.

Median Price

$1.674

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Distrelec

Netherlands . 94 parts In-Stock

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$1.674

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$1.541

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$1.518

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Digiode

USA . 4,090 parts In-Stock

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Vyrian

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Halfin

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ComSIT Distribution GmbH

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LittleDiode

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Ack Elektronik San.Tic.Ltd.Sti

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LIBRA Elektronik GmbH

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Digital Electronic Gebert Verwaltungs UG

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GES GmbH

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Corphita

USA . 51 parts In-Stock

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$1.507

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Parana Technologies

USA . 832 parts In-Stock

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DigiPath Technology Company

USA . 2,135 parts In-Stock

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ChromeModa Solutions

Germany . 2,964 parts In-Stock

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IDEA Electronic Components Group

UK . 857 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

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Assy Fe

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Overview

Unlock the power of seamless control with the TIC226N by Texas Instruments. Designed for excellence, this Triode For Alternating Current (TRIAC) boasts superior quality and reliability. From lighting controls to motor speed regulation, this versatile device offers unmatched performance and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs. Experience the value and benefits of precision engineering with the TIC226N.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Allows for reliable triggering of the TRIAC, ensuring proper switching of loads.

Maximum Leakage Current: 2 mA

Low leakage current helps in minimizing power loss and improving efficiency of the product.

Maximum Operating Temperature: 110 °C

Wide operating temperature range makes this TRIAC suitable for various environmental conditions.

Trigger Device Type: TRIAC

TRIACs are commonly used in AC control applications, making this product versatile in its use.

Minimum Operating Temperature: -40 °C

Allows for operation in cold environments without compromising performance.

Maximum RMS On-state Current: 8 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient control of the TRIAC.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating allows for switching high voltage loads with ease.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Ensures smooth and controlled switching to minimize inductive voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Helps in preventing false triggering and improving the reliability of the TRIAC.

Maximum Holding Current: 60 mA

Sufficient holding current ensures that the TRIAC remains in the On-state after triggering, improving stability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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