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TIC216S

Texas Instruments

TIC216S by Texas Instruments

TIC216S by Texas Instruments is a TRIAC with 5mA DC Gate Trigger Current, 2mA Leakage Current, and 6A RMS On-state Current. It operates b/w -40 to 110°C, making it suitable for AC power control applications requiring precise switching at up to 700V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,916 parts In-Stock

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5,916

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Corel Iberica Componentes, S.L.

Spain . 700 parts In-Stock

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700

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Digiode

USA . 518 parts In-Stock

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518

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Parana Technologies

USA . 2,177 parts In-Stock

1+ parts

$3.162

100+ parts

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$3.683

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2,177

$3.162

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$3.683

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DigiPath Technology Company

USA . 1,772 parts In-Stock

1+ parts

$3.482

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1,772

$3.482

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ChromeModa Solutions

Germany . 935 parts In-Stock

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$3.553

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$2.913

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935

$3.553

$2.913

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IDEA Electronic Components Group

UK . 138 parts In-Stock

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$3.553

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$3.198

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138

$3.553

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$3.198

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AZTECH Wire

Italy . 730 parts In-Stock

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$9.374

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730

$9.374

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One Stop Electronics

USA . 152 parts In-Stock

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$16.100

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152

$16.100

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 1,566 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Assy Fe

Spain . 700 parts In-Stock

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700

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Overview

Upgrade your electronics with the TIC216S by Texas Instruments, a high-quality TRIAC designed for a wide range of applications. With a maximum RMS on-state current of 6A and a repetitive peak off-state voltage of 700V, this device ensures reliable performance in various circuits. Whether you're looking to control power in lighting, heating or motor control systems, the TIC216S offers exceptional value and benefits to meet your needs. Trust Texas Instruments for top-notch quality and innovation in semiconductor solutions.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current requirement allows for efficient control of the TRIAC, enabling precise switching capabilities.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and enhances the overall efficiency of the device.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatile applications in different environmental conditions.

Trigger Device Type: TRIAC

Being a TRIAC allows for bidirectional control of current, making it suitable for AC switching applications.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures ensures reliable performance even in extreme cold conditions.

Maximum RMS On-state Current: 6 A

High RMS current rating enables the TRIAC to handle heavy loads efficiently.

Maximum DC Gate Trigger Voltage: 2.2 V

Low gate trigger voltage requirement allows for easy interfacing with control circuits.

Repetitive Peak Off-state Voltage: 700 V

High off-state voltage rating provides robust insulation to prevent voltage breakdown during off-state operation.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast commutation voltage response ensures smooth switching operation and prevents voltage spikes.

Maximum Holding Current: 30 mA

Sufficient holding current ensures the TRIAC remains in the on-state without unintentional turn-off, adding to the reliability of the device.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC216S attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC216S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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