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DTB12C

Onsemi

DTB12C by Onsemi

DTB12C by Onsemi is a TRIAC with 1.3V max on-state voltage, 50mA DC gate trigger current, and 2mA leakage current. It operates at up to 125 °C and handles 12A RMS on-state current, making it ideal for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,435 parts In-Stock

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Digiode

USA . 402 parts In-Stock

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402

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Native Components

USA . 374 parts In-Stock

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$1.500

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374

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Northwest PG Solutions

USA . 2,192 parts In-Stock

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$1.650

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Kulean Microsystems

USA . 3,307 parts In-Stock

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Corphita

USA . 826 parts In-Stock

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826

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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578

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TANS Electronics

Latvia . 569 parts In-Stock

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SupplyDigital Components

Austria . 476 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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Problanco Electronics

Mexico . 247 parts In-Stock

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Overview

Discover the power and reliability of the DTB12C by Onsemi, a high-quality TRIAC that offers unmatched performance in a variety of applications. With a maximum RMS on-state current of 12A and a repetitive peak off-state voltage of 200V, this product is perfect for controlling AC power in a range of electronic devices. Trust in Onsemi's reputation for excellence and innovation as you experience the value and benefits of the DTB12C, designed to meet your needs with precision and efficiency. Elevate your projects with the superior performance of the DTB12C from Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 1.3 V

Low on-state voltage helps minimize power loss and increase efficiency.

Maximum DC Gate Trigger Current: 50 mA

With a high gate trigger current, this TRIAC can reliably switch on when needed.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage when the TRIAC is in an off state.

Maximum Operating Temperature: 125 °C

The high operating temperature allows for use in a variety of environments without overheating.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for controlling AC power in a wide range of applications.

Maximum RMS On-state Current: 12 A

Capable of handling high currents without overheating, making it suitable for power control applications.

Maximum DC Gate Trigger Voltage: 2 V

With a low gate trigger voltage, the TRIAC can be easily activated by the control circuit.

Repetitive Peak Off-state Voltage: 200 V

Sufficient off-state voltage rating for handling AC power control in various electrical systems.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB12C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.3 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB12C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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