Loading...

DTB10F

Onsemi

DTB10F by Onsemi

DTB10F by Onsemi is a TRIAC with 1.3V max on-state voltage, 50mA DC gate trigger current, and 2mA leakage current. It operates at up to 125 °C and handles 10A RMS on-state current, making it ideal for AC power control applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,282 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,282

-

-

-

-

Vyrian

USA . 170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

170

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 412 parts In-Stock

1+ parts

$59.705

100+ parts

-

1k+ parts

-

10k+ parts

$57.317

412

$59.705

-

-

$57.317

Northwest PG Solutions

USA . 706 parts In-Stock

1+ parts

$65.676

100+ parts

-

1k+ parts

-

10k+ parts

-

706

$65.676

-

-

-

Problanco Electronics

Mexico . 6,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,745

-

-

-

-

SupplyDigital Components

Austria . 6,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,170

-

-

-

-

TANS Electronics

Latvia . 1,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,783

-

-

-

-

Kulean Microsystems

USA . 1,259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,259

-

-

-

-

UHIMA Technologies

Türkiye . 660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

660

-

-

-

-

Corphita

USA . 608 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

608

-

-

-

-

Corohmni

South Africa . 316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

316

-

-

-

-

Overview

Upgrade your electronics with the DTB10F from Onsemi, a reliable and high-quality TRIAC that offers superior performance and durability. With a maximum RMS on-state current of 10 A and a repetitive peak off-state voltage of 500 V, this product is perfect for a wide range of applications. Whether you're looking to control power in lighting systems, motor speed controls, or heating elements, the DTB10F provides precise and efficient operation. Trust in Onsemi's expertise and innovation to bring value and reliability to your projects.

Feature Benefit Bullets

Maximum On-state Voltage: 1.3 V

Low on-state voltage helps in reducing power losses and increasing energy efficiency.

Maximum DC Gate Trigger Current: 50 mA

The high DC gate trigger current ensures reliable and fast switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage and improves overall efficiency.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this TRIAC suitable for a wide range of industrial and commercial applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device is capable of controlling AC power with high efficiency and accuracy.

Maximum RMS On-state Current: 10 A

High RMS on-state current rating allows this TRIAC to handle high power loads without overheating.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient triggering and reliable operation of the TRIAC.

Repetitive Peak Off-state Voltage: 500 V

The high repetitive peak off-state voltage rating makes this TRIAC suitable for applications requiring high voltage handling capabilities.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB10F attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.3 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB10F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19