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TIC226B

Texas Instruments

TIC226B by Texas Instruments

TIC226B by Texas Instruments is a single TRIAC with 3 terminals, featuring a max RMS on-state current of 8A and a repetitive peak off-state voltage of 200V. Ideal for applications requiring 4-quadrant logic level TRIACs, it operates b/w -40 to 110°C and has a max DC gate trigger voltage of 2.5V.

Median Price

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Lifecycle Status

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7

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1k+

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Vyrian

USA . 7,181 parts In-Stock

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Digiode

USA . 4,229 parts In-Stock

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ECAB

Sweden . 109 parts In-Stock

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Halfin

Belgium . 90 parts In-Stock

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A&K Electronics

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Rotakorn

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Bristol Electronics

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Parana Technologies

USA . 1,993 parts In-Stock

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$3.612

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$4.126

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DigiPath Technology Company

USA . 834 parts In-Stock

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$3.977

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$3.659

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834

$3.977

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ChromeModa Solutions

Germany . 4,092 parts In-Stock

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$4.058

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$3.328

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IDEA Electronic Components Group

UK . 657 parts In-Stock

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$3.652

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One Stop Electronics

USA . 498 parts In-Stock

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$7.100

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AZTECH Wire

Italy . 432 parts In-Stock

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Corphita

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Assy Fe

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Overview

Upgrade your electronics with the TIC226B by Texas Instruments, a top-quality TRIAC that offers unparalleled performance and reliability. Manufactured by the trusted brand Texas Instruments, this TRIAC is perfect for a wide range of applications. With a maximum RMS on-state current of 8A and a repetitive peak off-state voltage of 200V, this TRIAC ensures smooth operation and efficient power management. Trust in Texas Instruments for all your electronic needs and experience the value and benefits that the TIC226B brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 50 mA

Allows for reliable and consistent triggering of the TRIAC, ensuring the device operates efficiently.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation of the TRIAC in various electronic circuits and systems.

Maximum RMS On-state Current: 8 A

Capable of handling high currents, making it suitable for applications where a significant amount of power needs to be controlled.

Repetitive Peak Off-state Voltage: 200 V

Provides a high voltage rating, making the TRIAC suitable for applications that require switching of higher voltages.

Maximum Holding Current: 60 mA

Ensures that the TRIAC remains in the on-state even in the presence of noise or disturbances, improving reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-110-3366, 5961011103366

NIIN

011103366

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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