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TIC225S

Texas Instruments

TIC225S by Texas Instruments

TIC225S by Texas Instruments is a TRIAC with 15mA DC Gate Trigger Current, 8A RMS On-state Current, and 700V Repetitive Peak Off-state Voltage. It operates b/w -40°C to 110°C, ideal for AC power control in various applications like lighting dimmers and motor speed controllers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,521 parts In-Stock

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Vyrian

USA . 2,570 parts In-Stock

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2,570

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Parana Technologies

USA . 1,765 parts In-Stock

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$2.242

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$2.745

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1,765

$2.242

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$2.745

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DigiPath Technology Company

USA . 1,811 parts In-Stock

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$2.469

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$2.469

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ChromeModa Solutions

Germany . 1,864 parts In-Stock

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$2.519

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$2.066

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$2.519

$2.066

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IDEA Electronic Components Group

UK . 1,433 parts In-Stock

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$2.519

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$2.267

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$2.519

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One Stop Electronics

USA . 1,281 parts In-Stock

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$4.100

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$4.100

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AZTECH Wire

Italy . 706 parts In-Stock

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$19.486

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706

$19.486

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Semicontronic

India . 279 parts In-Stock

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$23.100

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$22.522

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$22.407

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279

$23.100

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$22.407

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Ampacity Inc.

Singapore . 1,451 parts In-Stock

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$25.100

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$25.100

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Corphita

USA . 1,732 parts In-Stock

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Corohmni

South Africa . 396 parts In-Stock

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Overview

Unlock the power of advanced electronics with the TIC225S by Texas Instruments. This TRIAC device offers unparalleled performance and reliability, backed by the trusted name of Texas Instruments. Ideal for a wide range of applications, from dimmer switches to motor speed control, the TIC225S delivers seamless operation and efficient energy management. Experience the value of cutting-edge technology in every use, with the TIC225S leading the way in quality and innovation.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

The low trigger current allows for precise control of the TRIAC, making it suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal power loss and helps improve the efficiency of the device.

Maximum Operating Temperature: 110 °C

The high operating temperature range indicates the product's robustness and reliability even in demanding environments.

Trigger Device Type: TRIAC

Being a TRIAC, this device can control both positive and negative half cycles of an alternating current, making it versatile for various applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for operation in extreme cold conditions, increasing the usability of the product.

Maximum RMS On-state Current: 8 A

With a high on-state current rating, this TRIAC can handle significant loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 3 V

The low trigger voltage required for the gate ensures efficient and reliable triggering of the device.

Repetitive Peak Off-state Voltage: 700 V

The high off-state voltage rating enables the TRIAC to withstand voltage spikes and surges, ensuring long-term reliability.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

The critical rate of rise of the commutation voltage ensures reliable turn-off of the TRIAC, reducing the risk of voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The high critical rate of rise of the off-state voltage helps prevent false triggering and enhances the overall reliability of the device.

Maximum Holding Current: 30 mA

The holding current ensures the TRIAC remains in the conducting state even after the gate signal is removed, providing stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC225S attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC225S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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