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DTB10C

Onsemi

DTB10C by Onsemi

DTB10C by Onsemi is a TRIAC with 1.3V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for applications requiring up to 10A RMS on-state current, such as lighting control systems and motor speed controls. Operating temperature up to 125 °C ensures reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,753 parts In-Stock

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Digiode

USA . 635 parts In-Stock

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Native Components

USA . 124 parts In-Stock

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$101.780

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$97.709

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Northwest PG Solutions

USA . 1,824 parts In-Stock

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$111.958

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SupplyDigital Components

Austria . 6,586 parts In-Stock

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TANS Electronics

Latvia . 2,295 parts In-Stock

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Corphita

USA . 1,968 parts In-Stock

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Problanco Electronics

Mexico . 1,031 parts In-Stock

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Kulean Microsystems

USA . 730 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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UHIMA Technologies

Türkiye . 118 parts In-Stock

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Overview

Unlock the power of seamless control with the DTB10C by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their products. The DTB10C falls under the category of Triodes for Alternating Current (TRIAC) and is designed to offer maximum performance in various applications. With a maximum RMS on-state current of 10A and a repetitive peak off-state voltage of 200V, this product ensures smooth operation and efficiency. Experience the value and benefits of the DTB10C for yourself, and elevate your projects to new heights with ease and precision.

Feature Benefit Bullets

Maximum On-state Voltage: 1.3 V

Low on-state voltage allows for efficient conduction, reducing power losses and heat generation in the device.

Maximum DC Gate Trigger Current: 50 mA

The device can be easily triggered with a relatively low gate current, making it suitable for various applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures that the device maintains a high level of isolation when in the off-state, improving overall performance.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance allows for reliable performance in demanding conditions.

Trigger Device Type: TRIAC

TRIAC configuration provides bidirectional control of alternating current, enhancing versatility for use in AC applications.

Maximum RMS On-state Current: 10 A

High on-state current rating allows the device to handle significant current loads effectively.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage simplifies the control circuitry required to activate the device.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating ensures reliable isolation when the device is in the off-state, improving safety and performance.

Technical Specifications

Triode For Alternating Current (TRIAC) DTB10C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.3 V

Maximum Operating Temperature:

125 Cel

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTB10C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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