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DTC12N

Onsemi

DTC12N by Onsemi

DTC12N by Onsemi is a TRIAC with 1.5V max on-state voltage, 30mA max DC gate trigger current, and 12A max RMS on-state current. Ideal for AC power control applications due to its 600V repetitive peak off-state voltage and TRIAC trigger device type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 783 parts In-Stock

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Northwest PG Solutions

USA . 1,747 parts In-Stock

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TANS Electronics

Latvia . 7,892 parts In-Stock

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SupplyDigital Components

Austria . 7,765 parts In-Stock

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Problanco Electronics

Mexico . 6,639 parts In-Stock

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Kulean Microsystems

USA . 2,436 parts In-Stock

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Corphita

USA . 1,222 parts In-Stock

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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Native Components

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Corohmni

South Africa . 134 parts In-Stock

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Overview

Unlock the power of seamless control with the DTC12N by Onsemi. Known for their superior quality and reliability, Onsemi has crafted a TRIAC that delivers unmatched performance in a variety of applications. Whether you're looking to regulate lighting, heating, or motor speed, this versatile device offers precise control and efficiency. Say goodbye to disruptions and hello to a smoother operation with the DTC12N. Experience the value and benefits of Onsemi's expertise in semiconductor manufacturing today.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage allows for efficient conduction, reducing power losses and enhancing overall performance.

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current ensures reliable and stable switching of the TRIAC, making it suitable for various applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device can control both halves of an alternating current cycle, providing flexibility in AC power control applications.

Maximum RMS On-state Current: 12 A

With a high on-state current rating, this TRIAC can handle large loads with ease, making it ideal for high-power applications.

Maximum DC Gate Trigger Voltage: 2 V

The low gate trigger voltage ensures sensitive triggering, enabling precise control of the switching operation.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows for reliable operation even in high-voltage environments, making this TRIAC a robust choice.

Technical Specifications

Triode For Alternating Current (TRIAC) DTC12N attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum On-state Voltage:

1.5 V

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTC12N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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