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TIC216A

Texas Instruments

TIC216A by Texas Instruments

TIC216A by Texas Instruments is a single TRIAC with 3 terminals. It has a max DC gate trigger current of 5mA and max RMS on-state current of 6A. Ideal for applications requiring 4-quadrant logic level TRIACs, operating b/w -40 to 110°C, with a repetitive peak off-state voltage of 100V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 2,743 parts In-Stock

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Vyrian

USA . 1,471 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 97 parts In-Stock

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PUI

USA . 26 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$2.554

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$2.529

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$2.427

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$2.554

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One Stop Electronics

USA . 1,307 parts In-Stock

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$4.100

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Parana Technologies

USA . 1,839 parts In-Stock

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$4.152

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$4.597

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DigiPath Technology Company

USA . 711 parts In-Stock

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$4.572

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$4.206

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ChromeModa Solutions

Germany . 5,084 parts In-Stock

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$4.665

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$3.825

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IDEA Electronic Components Group

UK . 217 parts In-Stock

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$4.665

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$4.198

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AZTECH Wire

Italy . 376 parts In-Stock

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$7.932

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Corphita

USA . 4,566 parts In-Stock

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A-Plus Industry Inc.

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Overview

Looking to upgrade your electronic devices with a reliable and high-quality TRIAC? Look no further than the TIC216A by Texas Instruments! With a reputation for excellence, Texas Instruments delivers top-notch products like the TIC216A, perfect for a variety of applications. Whether you're in need of superior performance, efficiency, or durability, this TRIAC has got you covered. Trust Texas Instruments to provide you with the best value and benefits in the industry, ensuring that your projects run smoothly and efficiently. Experience the difference with the TIC216A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation for safety and durability.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current allows for efficient control of the device.

Configuration: SINGLE

Simplified setup with single configuration.

Package Shape: RECTANGULAR

Compact design for easy installation.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs for secure connections.

Maximum Leakage Current: 2 mA

Low leakage current helps in energy efficiency.

No. of Terminals: 3

Simplified connection setup with only 3 terminals.

Package Style (Meter): FLANGE MOUNT

Easy to mount securely in place.

Maximum Operating Temperature: 110 °C

Wide operating temperature range for versatility.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

Allows for precise control over switching.

Minimum Operating Temperature: -40 °C

Suitable for operation in colder environments.

Terminal Position: SINGLE

Simplified terminal configuration for ease of use.

Maximum RMS On-state Current: 6 A

High current rating for handling heavy loads.

Maximum DC Gate Trigger Voltage: 2.2 V

Low gate trigger voltage for efficient control.

Case Connection: MAIN TERMINAL 2

Clear labeling for easy installation.

Repetitive Peak Off-state Voltage: 100 V

Suitable for a wide range of applications.

Maximum Holding Current: 30 mA

Allows for reliable device operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC216A attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC216A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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