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TIC263M

Texas Instruments

TIC263M by Texas Instruments

TIC263M by Texas Instruments is a TRIAC with 600V repetitive peak off-state voltage, 25A max RMS on-state current, and 2.5V max DC gate trigger voltage. Ideal for AC power control applications due to its 4-quadrant logic level TRIAC configuration and -40°C to 110°C operating temperature range in a plastic/epoxy package style.

Median Price

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Lifecycle Status

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13

In-Stock Inventory

1k+

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Vyrian

USA . 6,017 parts In-Stock

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Digiode

USA . 3,504 parts In-Stock

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Nova Conductors

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ECAB

Sweden . 70 parts In-Stock

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70

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Manotoh

Italy . 25 parts In-Stock

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LWI Electronics Inc

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Technoshack Inc.

Canada . 10 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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Corel Iberica Componentes, S.L.

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GES GmbH

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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Electronic Expediters

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Huijzer Components

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Parana Technologies

USA . 2,322 parts In-Stock

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One Stop Electronics

USA . 1,466 parts In-Stock

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DigiPath Technology Company

USA . 1,186 parts In-Stock

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ChromeModa Solutions

Germany . 2,331 parts In-Stock

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IDEA Electronic Components Group

UK . 1,492 parts In-Stock

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AZTECH Wire

Italy . 371 parts In-Stock

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A-Z Elektronik GmbH

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Corphita

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Overview

Upgrade your electronic projects with the Texas Instruments TIC263M TRIAC. Manufactured with top-quality materials and cutting-edge technology, this device offers reliable performance and durability. Ideal for a variety of applications, from dimmer switches to motor control, the TIC263M provides seamless operation and precise control. Trust Texas Instruments for superior products that deliver value and efficiency, making your projects stand out with the best in class components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the internal components of the TRIAC, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 50 mA

The high maximum DC gate trigger current allows for reliable and efficient triggering of the TRIAC, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies installation and integration of the TRIAC into various circuit designs, making it user-friendly.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement of the TRIAC in different types of electronic devices or equipment.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ensures stability during operation, reducing the risk of disconnection or malfunction.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in minimizing power loss and enhancing the overall efficiency of the TRIAC, making it cost-effective.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and compatibility with various circuit configurations, increasing the flexibility of the TRIAC.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers convenient installation and secure attachment of the TRIAC to a mounting surface, ensuring stability.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature tolerance allows the TRIAC to withstand elevated temperatures, making it suitable for industrial applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level trigger device type provides precise control and responsiveness in switching operations, enhancing the performance of the TRIAC.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature tolerance enables the TRIAC to function reliably in cold environments, making it versatile for different operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper alignment when installing the TRIAC, facilitating ease of use.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current rating enables the TRIAC to handle substantial load currents, making it ideal for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage requirement helps in reducing power consumption and simplifying the control signal interface, enhancing the efficiency of the TRIAC.

Case Connection: MAIN TERMINAL 2

The case connection to main terminal 2 ensures proper grounding and shielding of the TRIAC, improving overall performance and safety during operation.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating allows the TRIAC to withstand high voltage surges and transient conditions, enhancing the reliability and resilience of the device.

Maximum Holding Current: 50 mA

The high maximum holding current capability ensures stable operation of the TRIAC in on-state condition, preventing unintentional turn-off and ensuring reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC263M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC263M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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