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BTA225-600BT,127

NXP Semiconductors

BTA225-600BT,127 by NXP Semiconductors

BTA225-600BT,127 by NXP Semiconductors is a single TRIAC with 25A RMS on-state current and 600V repetitive peak off-state voltage. It operates b/w -40 to 150 °C and has a max DC gate trigger current of 50mA. Ideal for applications requiring snubberless TRIACs in various electronic circuits.

Median Price

$0.722

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip1Stop

Japan . 20 parts In-Stock

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$0.722

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Digiode

USA . 1,687 parts In-Stock

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$0.686

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Nova Conductors

Japan . 51 parts In-Stock

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Anansix

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VNN

France . 928 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 20 parts In-Stock

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$0.610

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Corphita

USA . 1,388 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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$0.692

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Continental Prestige Electronics

USA . 4,917 parts In-Stock

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Argo Parts USA

USA . 887 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,055 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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AZTECH Wire

Italy . 190 parts In-Stock

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UNI Independent Distributors

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Overview

Unleash the power of NXP Semiconductors with the BTA225-600BT,127 Triode For Alternating Current (TRIAC). This high-quality product offers reliable performance and durability, making it a top choice for various applications. From home appliances to industrial machinery, this TRIAC provides exceptional value, benefits, and advantages to customers. Trust NXP Semiconductors for cutting-edge technology that delivers unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a long lifespan for the product.

Maximum DC Gate Trigger Current: 50 mA

With a high trigger current, this TRIAC can efficiently control the flow of current, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the wiring and setup process, making it easier to integrate into different systems.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation in various equipment or circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and stability, ensuring reliable performance in demanding conditions.

Maximum Leakage Current: 5 mA

The low leakage current minimizes power loss and improves the overall efficiency of the TRIAC.

No. of Terminals: 3

With three terminals, this TRIAC can easily interface with other components or devices in a circuit.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers a stable and secure mounting option for the TRIAC in different applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the TRIAC to perform reliably in various environmental conditions.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design helps reduce electromagnetic interference and enhances the overall performance of the device.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the TRIAC can work in cold environments without any issues.

Terminal Finish: TIN

The tin finish on the terminals provides excellent conductivity and corrosion resistance, ensuring a reliable connection.

Terminal Position: SINGLE

With a single terminal position, the TRIAC is easy to install and connect in a circuit.

Maximum RMS On-state Current: 25 A

The high on-state current rating allows this TRIAC to handle heavy loads without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage ensures efficient and responsive control of the TRIAC.

Case Connection: MAIN TERMINAL 2

The main terminal connection simplifies the installation process and ensures proper operation in the circuit.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating makes this TRIAC suitable for high-power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

This high rate of rise ensures fast and reliable switching performance in the device.

Maximum Holding Current: 60 mA

The high holding current allows the TRIAC to maintain its conducting state even in noisy or fluctuating electrical environments.

Technical Specifications

Triode For Alternating Current (TRIAC) BTA225-600BT,127 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from NXP Semiconductors

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTA225-600BT,127 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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