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5962-01-398-1592

Texas Instruments

5962-01-398-1592 by Texas Instruments

The Texas Instruments 5962-01-398-1592 is a TRIAC with max DC gate trigger current of 50mA, max leakage current of 2mA, and max operating temp of 110°C. It is used as a trigger device in applications requiring a max RMS on-state current of 8A and repetitive peak off-state voltage of 600V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,922 parts In-Stock

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Digiode

USA . 2,842 parts In-Stock

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Semicontronic

India . 1,140 parts In-Stock

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$2.100

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$2.048

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$2.037

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$2.100

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Parana Technologies

USA . 304 parts In-Stock

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$3.491

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$4.013

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DigiPath Technology Company

USA . 1,044 parts In-Stock

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$3.844

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$3.536

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$3.844

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IDEA Electronic Components Group

UK . 2,283 parts In-Stock

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$3.922

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$3.530

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ChromeModa Solutions

Germany . 349 parts In-Stock

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$3.922

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$3.216

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AZTECH Wire

Italy . 424 parts In-Stock

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$5.594

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Ampacity Inc.

Singapore . 829 parts In-Stock

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$15.100

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One Stop Electronics

USA . 878 parts In-Stock

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$27.100

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Northwest PG Solutions

USA . 1,608 parts In-Stock

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$3.267

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Native Components

USA . 413 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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Corphita

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Overview

Elevate your electronic projects with the 5962-01-398-1592 by Texas Instruments, a top-of-the-line Triode For Alternating Current (TRIAC) that offers unparalleled quality and reliability. Designed with precision by Texas Instruments, this TRIAC boasts a maximum RMS On-state Current of 8A and a Repetitive Peak Off-state Voltage of 600V, making it ideal for a wide range of applications. Whether you're working on lighting controls or motor speed controls, this TRIAC ensures optimal performance and efficiency. Trust Texas Instruments to deliver superior components that guarantee lasting value and exceptional results.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

A higher trigger current ensures reliable and consistent switching of the TRIAC, making it suitable for various applications.

Maximum Leakage Current: 2 mA

Low leakage current indicates minimal power loss when the device is in the off-state, leading to energy efficiency.

Maximum Operating Temperature: 110 °C

With a high operating temperature range, this TRIAC can withstand harsh environmental conditions and deliver reliable performance.

Trigger Device Type: TRIAC

Being a TRIAC, this device can control both halves of an AC waveform, making it versatile for AC power control applications.

Minimum Operating Temperature: -40 °C

The wide temperature range allows this TRIAC to function in cold environments, enhancing its usability in various settings.

Maximum RMS On-state Current: 8 A

Capable of handling high current loads, this TRIAC is suitable for applications that require power control and switching of heavy loads.

Maximum DC Gate Trigger Voltage: 2.5 V

Low trigger voltage ensures efficient triggering of the TRIAC while consuming minimal power.

Repetitive Peak Off-state Voltage: 600 V

A high off-state voltage rating makes this TRIAC suitable for applications where high voltage switching is required.

Minimum Critical Rate of Rise of Commutation Voltage: 5 V/us

Fast commutation voltage rise ensures rapid turn-off of the TRIAC, reducing heat dissipation and improving efficiency.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast rise of off-state voltage helps in preventing false triggering and ensures reliable operation of the TRIAC.

Maximum Holding Current: 60 mA

Higher holding current allows the TRIAC to remain in the on-state under varying conditions, ensuring stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) 5962-01-398-1592 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

5 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

5962-01-398-1592 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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