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T2800M

Asi Semiconductor

T2800M by Asi Semiconductor

TRIAC; Surface Mount: NO; Maximum RMS On-state Current: 8 A; Minimum Operating Temperature: -40 Cel; Repetitive Peak Off-state Voltage: 600 V; Minimum Critical Rate of Rise of Off-state Voltage: 60 V/us;

Median Price

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Digiode

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Bristol Electronics

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LittleDiode

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Problanco Electronics

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Technical Specifications

Triode For Alternating Current (TRIAC) T2800M attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Asi Semiconductor

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

4 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

60 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

30 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

2 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

T2800M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-113-4165, 5961011134165

NIIN

011134165

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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