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TIC226C

Texas Instruments

TIC226C by Texas Instruments

TIC226C by Texas Instruments is a TRIAC with 8A RMS on-state current, 300V repetitive peak off-state voltage, and 2.5V max DC gate trigger voltage. It operates b/w -45°C to 125°C and has a max leakage current of 2mA. Ideal for AC power control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,882 parts In-Stock

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Digiode

USA . 658 parts In-Stock

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Parana Technologies

USA . 1,034 parts In-Stock

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$1.955

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$2.489

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1,034

$1.955

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$2.489

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ChromeModa Solutions

Germany . 4,892 parts In-Stock

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$2.197

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$1.802

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IDEA Electronic Components Group

UK . 2,232 parts In-Stock

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$2.197

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$1.977

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AZTECH Wire

Italy . 730 parts In-Stock

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$8.689

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Semicontronic

India . 856 parts In-Stock

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$9.100

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$8.872

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$8.827

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856

$9.100

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Ampacity Inc.

Singapore . 738 parts In-Stock

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$13.100

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One Stop Electronics

USA . 469 parts In-Stock

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$16.100

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Corphita

USA . 3,159 parts In-Stock

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DigiPath Technology Company

USA . 1,716 parts In-Stock

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$1.981

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Corohmni

South Africa . 128 parts In-Stock

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Overview

Elevate your electronic projects with the TIC226C by Texas Instruments, a top-tier manufacturer known for their quality and reliability. As a Triode For Alternating Current (TRIAC), this versatile component offers seamless control over AC power, making it ideal for a wide range of applications. With a maximum RMS On-state Current of 8A and a Repetitive Peak Off-state Voltage of 300V, this TRIAC ensures optimal performance and efficiency. Trust in Texas Instruments to deliver superior products that bring value and benefits to your designs. Elevate your projects with the TIC226C today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

This spec ensures that the product can be triggered efficiently with a low gate current, which helps in conserving energy and prolonging the lifespan of the device.

Maximum Leakage Current: 2 mA

Low leakage current means minimal power loss when the device is in an off-state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and continue to function reliably.

Trigger Device Type: TRIAC

Being a TRIAC device allows for bidirectional control of current flow, making it suitable for a wide range of AC switching applications.

Minimum Operating Temperature: -45 °C

The ability to operate at low temperatures makes this product versatile and suitable for use in various environments.

Maximum RMS On-state Current: 8 A

With a high on-state current rating, this product can handle heavy loads without overheating, ensuring stable performance.

Maximum DC Gate Trigger Voltage: 2.5 V

The low gate trigger voltage enables easy and efficient control over the device, enhancing its usability.

Repetitive Peak Off-state Voltage: 300 V

The high off-state voltage rating provides reliable insulation and protection against voltage spikes, ensuring the safety of the connected equipment.

Maximum Holding Current: 60 mA

The high holding current ensures that the device remains ON even after the gate trigger signal is removed, offering stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) TIC226C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

Maximum Leakage Current:

2 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

TRIACs

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TIC226C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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