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MAC4DSN-1G

Onsemi

MAC4DSN-1G by Onsemi

MAC4DSN-1G by Onsemi is a TRIAC with 800V repetitive peak off-state voltage and 4A max RMS on-state current. It operates b/w -40 to 125 °C, with a gate trigger voltage of 1.3V and a max DC gate trigger current of 10mA. Ideal for AC power control applications requiring reliable switching capabilities.

Median Price

$0.425

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,644 parts In-Stock

1+ parts

-

100+ parts

$0.409

1k+ parts

$0.340

10k+ parts

$0.303

16,644

-

$0.409

$0.340

$0.303

DigiKey

USA . 16,644 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.510

10k+ parts

-

16,644

-

-

$0.510

-

Verical

USA . 16,644 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.425

10k+ parts

$0.379

16,644

-

-

$0.425

$0.379

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 229 parts In-Stock

1+ parts

$0.282

100+ parts

-

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-

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229

$0.282

-

-

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Digiode

USA . 244 parts In-Stock

1+ parts

$0.319

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-

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244

$0.319

-

-

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DigiKey Marketplace

USA . 31,174 parts In-Stock

1+ parts

-

100+ parts

$0.350

1k+ parts

-

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31,174

-

$0.350

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-

Chip Stock

USA . 1,025 parts In-Stock

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1,025

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 483 parts In-Stock

1+ parts

$0.282

100+ parts

-

1k+ parts

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483

$0.282

-

-

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Corphita

USA . 860 parts In-Stock

1+ parts

$0.302

100+ parts

-

1k+ parts

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860

$0.302

-

-

-

Component Stockers USA

USA . 39,673 parts In-Stock

1+ parts

$0.340

100+ parts

$0.320

1k+ parts

$0.290

10k+ parts

$0.290

39,673

$0.340

$0.320

$0.290

$0.290

Microchip USA

USA . 5,866 parts In-Stock

1+ parts

$3.793

100+ parts

-

1k+ parts

-

10k+ parts

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5,866

$3.793

-

-

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Continental Prestige Electronics

USA . 31,174 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.282

10k+ parts

-

31,174

-

-

$0.282

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A-Z Elektronik GmbH

Germany . 6,489 parts In-Stock

1+ parts

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6,489

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Problanco Electronics

Mexico . 5,620 parts In-Stock

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5,620

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 4,326 parts In-Stock

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4,326

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SupplyDigital Components

Austria . 2,578 parts In-Stock

1+ parts

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2,578

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TANS Electronics

Latvia . 1,968 parts In-Stock

1+ parts

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1,968

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Kulean Microsystems

USA . 855 parts In-Stock

1+ parts

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100+ parts

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855

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UHIMA Technologies

Türkiye . 765 parts In-Stock

1+ parts

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765

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Overview

Experience the superior quality and reliability of the MAC4DSN-1G by Onsemi, a leading manufacturer in the industry. This Triode For Alternating Current (TRIAC) offers a wide range of applications and benefits for customers seeking a high-performance product. With a maximum RMS On-state Current of 4A and a Repetitive Peak Off-state Voltage of 800V, this TRIAC provides exceptional value and efficiency. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and safety.

Maximum DC Gate Trigger Current: 10 mA

Allows for easy and reliable triggering of the TRIAC under various operating conditions.

Configuration: SINGLE

Simplified design with single configuration makes installation and maintenance easier.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Repetitive Peak Off-state Voltage: 800 V

Capable of handling high voltages, ensuring safety and reliability in power control applications.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Provides fast response and protection against voltage spikes, enhancing overall performance.

Technical Specifications

Triode For Alternating Current (TRIAC) MAC4DSN-1G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

MAC4DSN-1G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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