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AR0238CSSC12SHRA0-DP2

Onsemi

AR0238CSSC12SHRA0-DP2 by Onsemi

Onsemi's AR0238CSSC12SHRA0-DP2 is a 3x3 um CMOS image sensor with 1928 (H) x 1088 (V) pixels. It operates at a max supply voltage of 1.95 V and has a dynamic range of 96 dB. Ideal for applications requiring high-resolution imaging, such as surveillance cameras or industrial machine vision systems.

Median Price

$21.940

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Mouser Electronics

USA . 20 parts In-Stock

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$24.960

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$20.970

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$19.140

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$18.850

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DigiKey

USA . 20 parts In-Stock

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$18.921

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Digiode

USA . 1,936 parts In-Stock

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Vyrian

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Continental Prestige Electronics

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Corohmni

South Africa . 323 parts In-Stock

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$20.980

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Corphita

USA . 1,045 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Northwest PG Solutions

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UHIMA Technologies

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Overview

Discover a new level of imaging excellence with the AR0238CSSC12SHRA0-DP2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that are ideal for a wide range of applications. From security cameras to automotive systems, this sensor offers unparalleled value with its high performance and reliability. Elevate your projects with the cutting-edge technology of the AR0238CSSC12SHRA0-DP2 and experience the benefits of superior image quality and precision. Choose Onsemi for innovation you can trust.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for detailed and high-resolution image capture, making this sensor suitable for applications requiring precision.

Maximum Supply Voltage: 1.95 V

Low power consumption due to lower supply voltage, making it energy-efficient and cost-effective.

Master Clock: 48 MHz

High master clock frequency enables fast data processing and high frame rates, ideal for real-time image capture.

Body Width: 11.53 inch

Compact size makes it easy to integrate into different devices or systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise, resulting in clear and accurate image reproduction.

Dynamic Range: 96 dB

Wide dynamic range allows the sensor to capture both dark and bright areas accurately, ensuring high-quality images in various lighting conditions.

Output Interface Type: 2-WIRE INTERFACE

Simple and easy-to-use output interface for seamless integration with other components or systems, enhancing overall usability.

Frame Rate: 60 fps

High frame rate enables smooth and fluid video recording or high-speed image capture, suitable for fast-moving objects or dynamic scenes.

Mounting Feature: SURFACE MOUNT

Surface-mount capability simplifies the installation process and allows for flexible placement within a device or system.

Technical Specifications

Image Sensors AR0238CSSC12SHRA0-DP2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO REQUIRES 2.8V NOMINAL SUPPLY

Array Type:

LINEAR

Body Width:

11.53 inch

Body Height:

1.62 mm

Body Length/Diameter:

11.53 mm

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

4 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1088

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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