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AR0220AT4R00XUEA2-TPBR

Onsemi

AR0220AT4R00XUEA2-TPBR by Onsemi

Onsemi's AR0220AT4R00XUEA2-TPBR is a 1/1.8 inch CMOS image sensor with 1828x948 pixels, offering digital output via a 2-wire interface at 60 fps. Ideal for surface mount applications in frame arrays, this sensor measures 9" x 12mm x 1.7mm and features Tin/Silver/Copper terminal finish for solder connections.

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Lifecycle Status

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In-Stock Inventory

1k+

AR0220AT4R00XUEA2-TPBR by Onsemi
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Vyrian

USA . 8,391 parts In-Stock

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Digiode

USA . 1,314 parts In-Stock

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Northwest PG Solutions

USA . 1,691 parts In-Stock

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AZTECH Wire

Italy . 381 parts In-Stock

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$15.640

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TANS Electronics

Latvia . 7,830 parts In-Stock

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SupplyDigital Components

Austria . 7,037 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,483 parts In-Stock

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Native Components

USA . 978 parts In-Stock

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Kulean Microsystems

USA . 849 parts In-Stock

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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Corohmni

South Africa . 150 parts In-Stock

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Corphita

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Overview

Capture the world with crystal-clear precision using the AR0220AT4R00XUEA2-TPBR image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that push the boundaries of innovation. This cutting-edge image sensor is perfect for a wide range of applications, from security cameras to automotive systems. With its high resolution and digital output, this sensor provides unparalleled performance for all your imaging needs. Elevate your projects with the superior quality and reliability of Onsemi's AR0220AT4R00XUEA2-TPBR image sensor.

Feature Benefit Bullets

Body Width: 9 inch

The compact size of the body makes it easy to fit into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high efficiency, making them a popular choice for imaging applications.

Body Height: 1.7 mm

The low profile of the body allows for sleek design integration in devices where space is a premium.

Package Shape or Style: RECTANGULAR

The rectangular shape facilitates easy mounting and alignment in various devices.

Horizontal Pixel: 1828

Higher horizontal pixel count enables detailed imaging and clearer pictures.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and transmission, enhancing overall system efficiency.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish enhances conductivity and durability, ensuring reliable performance.

Vertical Pixel: 948

Increased vertical pixel count enhances image resolution and quality.

Body Length/Diameter: 12 mm

The moderate size of the body allows for a balance between compact design and functionality.

Optical Format (inch): 1/1.8

The optical format is ideal for capturing high-quality images with good clarity.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections for seamless integration.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices or systems.

Frame Rate: 60 fps

High frame rate ensures smooth and fast image capture, essential for real-time applications.

Array Type: FRAME

The frame array design optimizes image capture and processing efficiency.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy installation on PCBs or other surfaces, making it suitable for various devices.

Technical Specifications

Image Sensors AR0220AT4R00XUEA2-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

AEC-Q100, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.7 mm

Body Length/Diameter:

12 mm

Frame Rate:

60 fps

Horizontal Pixel:

1828

JESD-609 Code:

e1

Mounting Feature:

Optical Format (inch):

1/1.8

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

948

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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