Loading...

N25Q256A11EF840E

Micron Technology

N25Q256A11EF840E by Micron Technology

N25Q256A11EF840E by Micron Technology is a 256M NOR flash memory with 108 MHz clock frequency, SPI serial bus type, and 1.8V programming voltage. It is ideal for industrial applications requiring high endurance of 100K write/erase cycles in a small outline package.

Median Price

$10.500

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 3 parts In-Stock

1+ parts

$10.500

100+ parts

-

1k+ parts

-

10k+ parts

-

3

$10.500

-

-

-

Chip Stock

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Vyrian

USA . 4,137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,137

-

-

-

-

Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Digiode

USA . 2,055 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,055

-

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Avant Electronics Limited

UK . 18 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18

-

-

-

-

SPM Sales

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,537 parts In-Stock

1+ parts

$18.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,537

$18.000

-

-

-

AZTECH Wire

Italy . 760 parts In-Stock

1+ parts

$18.836

100+ parts

-

1k+ parts

-

10k+ parts

-

760

$18.836

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,843 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,843

-

-

-

-

Perfect Parts

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,300

-

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

RC Electronics

USA . 498 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

498

-

-

-

-

Microchip USA

USA . 475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

475

-

-

-

-

Corphita

USA . 442 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

442

-

-

-

-

iodParts Technologies Inc.

India . 28 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28

-

-

-

-

Overview

Discover the cutting-edge N25Q256A11EF840E by Micron Technology, a top-of-the-line Flash Memory device designed to revolutionize your electronics. With its industry-leading technology, this product offers unmatched performance and reliability for a wide range of applications. Whether you're a tech enthusiast or a professional in need of dependable memory solutions, this product delivers exceptional value, benefits, and advantages that will elevate your projects to new heights. Upgrade to Micron Technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it a suitable choice for various applications.

Surface Mount: YES

This feature allows for easy installation and integration into existing systems, improving efficiency.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and fit into compact spaces, ideal for space-constrained designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer speed and efficiency, making it an efficient choice for high-performance applications.

Nominal Supply Voltage: 1.8V

The low voltage requirement helps in reducing power consumption, making it energy-efficient and cost-effective.

Power Supplies: 1.8V

Consistent power supply ensures stable performance, making it a reliable choice for continuous operation.

No. of Terminals: 8

The optimal number of terminals simplifies connections, reducing installation complexity and enhancing usability.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This design not only saves space but also aids in heat dissipation, improving overall performance and reliability.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures functionality in various environments, enhancing versatility.

Organization: 256MX1

With a large memory organization, this product can store a vast amount of data, suitable for demanding applications.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable operation in extreme conditions, making it a versatile choice for diverse environments.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and enhances connectivity options, improving usability.

Write Protection: HARDWARE/SOFTWARE

Write protection features provide data security, making it a reliable choice for sensitive information storage.

Maximum Seated Height: 1 mm

The low seated height allows for compact designs, making it suitable for space-constrained applications.

Maximum Clock Frequency: 108 MHz

High clock frequency enhances data transfer speed, making it a high-performance choice for speed-critical applications.

Width: 6 mm

The compact width makes it easy to fit into tight spaces, suitable for small-scale designs.

Minimum Supply Voltage: 1.7V

The low minimum supply voltage helps in reducing power consumption, making it energy-efficient and cost-effective.

Type: NOR TYPE

The NOR type memory offers fast read and write speeds, making it suitable for applications requiring quick data access.

Length: 8 mm

The short length enables easy integration into various systems, enhancing versatility.

Programming Voltage: 1.8V

The programming voltage requirement ensures compatibility with standard voltage levels, improving usability.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable operation in harsh environments, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making it energy-efficient and reliable.

Parallel or Serial: SERIAL

Serial interface allows for simplified data transfer and reduced wiring complexity, improving efficiency.

Terminal Form: NO LEAD

The lead-free terminal form is environmentally friendly and complies with industry regulations, making it a sustainable choice.

Maximum Supply Current: 20 mA

The low supply current requirement helps in reducing power consumption, making it energy-efficient and cost-effective.

No. of Words: 268435456 words

With a vast number of words, this product offers ample storage capacity, suitable for data-intensive applications.

Minimum Data Retention Time: 20

The long data retention time ensures data integrity, making it a reliable choice for long-term data storage.

Terminal Pitch: 1.27 mm

The optimal terminal pitch simplifies connections, reducing installation complexity and enhancing usability.

No. of Words Code: 256M

The code indicates a large memory capacity, making it suitable for applications with high storage requirements.

Maximum Supply Voltage: 2V

The high supply voltage tolerance ensures compatibility with various power sources, enhancing flexibility in usage.

Endurance: 100000 Write/Erase Cycles

High endurance ensures long-term reliability, making it suitable for frequent write and erase operations.

Serial Bus Type: SPI

SPI interface offers fast data transfer and simplified communication protocol, making it suitable for high-speed applications.

Memory Density: 268435456 bit

High memory density provides ample storage capacity, suitable for applications with large data requirements.

Memory IC Type: FLASH

Flash memory offers fast read and write speeds, making it suitable for applications requiring quick data access.

Maximum Standby Current: 0.00002 Amp

The low standby current requirement helps in reducing power consumption, making it energy-efficient and cost-effective.

Technical Specifications

Flash Memory N25Q256A11EF840E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Additional Features:

SPI-COMPATIBLE SERIAL BUS INTERFACE

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q256A11EF840E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20