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N25Q128A13E1240E

Micron Technology

N25Q128A13E1240E by Micron Technology

Micron Technology's N25Q128A13E1240E is a 128M NOR flash memory with 108 MHz clock frequency, SPI serial bus type. Operating at 3V, it offers 100000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,197 parts In-Stock

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Digiode

USA . 316 parts In-Stock

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First Choice Components Inc.

USA . 304 parts In-Stock

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304

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Semtec, LLC

USA . 11 parts In-Stock

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Bristol Electronics

USA . 9 parts In-Stock

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Atlantic Semiconductor

USA . 9 parts In-Stock

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Cyclops Electronics Ltd

UK . 4 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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Speed Components Ltd

Israel . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 5 parts In-Stock

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$3.751

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5

$3.751

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Semicontronic

India . 1,142 parts In-Stock

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$4.000

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$3.900

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$3.880

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$4.000

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Aztec Data Supply Inc.

USA . 3,370 parts In-Stock

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$4.020

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$4.020

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Andel Nordic

Denmark . 2,346 parts In-Stock

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$8.637

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$8.292

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2,346

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$8.292

AZTECH Wire

Italy . 659 parts In-Stock

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$14.510

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Ampacity Inc.

Singapore . 1,546 parts In-Stock

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$30.000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,007 parts In-Stock

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Kepictronics

USA . 6,454 parts In-Stock

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Argo Parts USA

USA . 3,913 parts In-Stock

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Microchip USA

USA . 3,210 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 3,016 parts In-Stock

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Continental Prestige Electronics

USA . 2,871 parts In-Stock

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Corphita

USA . 796 parts In-Stock

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Computer Components Inc. - USA

USA . 13 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience next-level performance and reliability with the N25Q128A13E1240E by Micron Technology. As a leading manufacturer, Micron Technology delivers top-quality Flash Memory products that are perfect for a wide range of applications. From industrial to consumer electronics, this versatile memory solution offers high endurance, fast programming speeds, and secure write protection. Elevate your projects with the exceptional value and benefits of the N25Q128A13E1240E, designed to meet your storage needs with precision and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the flash memory, making it suitable for both industrial and consumer applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V provides a balance between power efficiency and performance in various applications.

Write Protection: HARDWARE/SOFTWARE

The ability to enable write protection using both hardware and software methods ensures data security and prevents accidental data loss or corruption.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, this flash memory chip offers reliability and longevity for frequent data read/write operations.

Technical Specifications

Flash Memory N25Q128A13E1240E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13E1240E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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