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SINGLE RF Small Signal Bipolar Junction Transistors (BJT) 171

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFG505/X,215 by NXP Semiconductors

BFG505/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

HIGH RELIABILITY

COLLECTOR

.018 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFG520,215 by NXP Semiconductors

BFG520,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

HIGH RELIABILITY

COLLECTOR

.07 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG520/X,215 by NXP Semiconductors

BFG520/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

HIGH RELIABILITY

COLLECTOR

.07 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFG520W,115 by NXP Semiconductors

BFG520W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .07 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.07 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG520W/X,115 by NXP Semiconductors

BFG520W/X,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .07 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.07 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFG540,215 by NXP Semiconductors

BFG540,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFG540/X,215 by NXP Semiconductors

BFG540/X,215

NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

9000 MHz

BFG540W,115 by NXP Semiconductors

BFG540W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFG540W/X,115 by NXP Semiconductors

BFG540W/X,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

9000 MHz

BFG541,115 by NXP Semiconductors

BFG541,115

NXP Semiconductors

NXP Semiconductors' BFG541,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max IC of 0.12 A and hFE of 60, ideal for L Band switching applications. The small outline package with gull wing terminals supports surface mount assembly up to 260°C peak reflow temperature.

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.65 W

.65 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG590,215 by NXP Semiconductors

BFG590,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.65 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

BFG590/X,215 by NXP Semiconductors

BFG590/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.65 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFG591,115 by NXP Semiconductors

BFG591,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .2 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

7000 MHz

BFG67,215 by NXP Semiconductors

BFG67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG67/X,215 by NXP Semiconductors

BFG67/X,215

NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

8000 MHz

BFG93A,215 by NXP Semiconductors

BFG93A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFG94,115 by NXP Semiconductors

BFG94,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .06 A;

HIGH RELIABILITY

COLLECTOR

.06 A

2 pF

12 V

SINGLE

45

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.7 W

.7 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

6000 MHz

BFG97,115 by NXP Semiconductors

BFG97,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5500 MHz

BFQ149,115 by NXP Semiconductors

BFQ149,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

20

C BAND

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5000 MHz

BFQ18A,115 by NXP Semiconductors

BFQ18A,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

COLLECTOR

.15 A

18 V

SINGLE

25

S BAND

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

30

AMPLIFIER

SILICON

4000 MHz

BFQ19,115 by NXP Semiconductors

BFQ19,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

LOW NOISE

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

TO-243

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5500 MHz

BFQ540,115 by NXP Semiconductors

BFQ540,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .12 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.12 A

15 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-243

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.2 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

9000 MHz

BFQ67,215 by NXP Semiconductors

BFQ67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFR106,215 by NXP Semiconductors

BFR106,215

NXP Semiconductors

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

LOW NOISE

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR505,215 by NXP Semiconductors

BFR505,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR505T,115 by NXP Semiconductors

BFR505T,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR520,215 by NXP Semiconductors

BFR520,215

NXP Semiconductors

NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.

LOW NOISE, HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR520T,115 by NXP Semiconductors

BFR520T,115

NXP Semiconductors

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.

HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR540,215 by NXP Semiconductors

BFR540,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

.12 A

SINGLE

60

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR92A,215 by NXP Semiconductors

BFR92A,215

NXP Semiconductors

NXP Semiconductors' BFR92A,215 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.35 W and operates up to 175°C. Ideal for L Band applications, this transistor offers high gain (hFE=40) and low collector current (IC=0.025 A).

LOW NOISE

.025 A

15 V

SINGLE

40

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92AW,115 by NXP Semiconductors

BFR92AW,115

NXP Semiconductors

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR93A,215 by NXP Semiconductors

BFR93A,215

NXP Semiconductors

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.

LOW NOISE

.035 A

12 V

SINGLE

40

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFR93AW,115 by NXP Semiconductors

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

HIGH RELIABILITY

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS17,215 by NXP Semiconductors

BFS17,215

NXP Semiconductors

The NXP Semiconductors BFS17,215 is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 1600 MHz and can handle a collector-emitter voltage of 15V. This transistor is commonly used in amplifier applications due to its ultra-high frequency band capabilities.

.025 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFS17A,215 by NXP Semiconductors

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.

.025 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

2800 MHz

BFS17W,115 by NXP Semiconductors

BFS17W,115

NXP Semiconductors

NXP Semiconductors' BFS17W,115 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.3 W. It operates in the ultra high frequency band at 1600 MHz, making it ideal for amplifier applications. The transistor has a max. collector-emitter voltage of 15 V and can handle a max. collector current of 0.05 A.

.05 A

1.5 pF

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

1600 MHz

BFS25A,115 by NXP Semiconductors

BFS25A,115

NXP Semiconductors

NXP Semiconductors' BFS25A,115 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.032 W and operates at up to 175°C. Ideal for L Band applications like amplifiers due to its small outline package and high transition frequency.

LOW NOISE, HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS505,115 by NXP Semiconductors

BFS505,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFS520,115 by NXP Semiconductors

BFS520,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

LOW NOISE, HIGH RELIABILITY

.07 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFS540,115 by NXP Semiconductors

BFS540,115

NXP Semiconductors

NXP Semiconductors' BFS540,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max power dissipation of 0.5 W and operates at up to 175°C. Ideal for ultra-high frequency amplifier applications due to its small outline package and Gull Wing terminals.

HIGH RELIABILITY

.12 A

15 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

R-PSSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

9000 MHz

BFT25A,215 by NXP Semiconductors

BFT25A,215

NXP Semiconductors

NXP Semiconductors' BFT25A,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 5000 MHz and hFE of 50, suitable for amplifier applications. The transistor has a max power dissipation of 0.032 W and can handle a collector-emitter voltage of 5V.

HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

LOW NOISE

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.

HIGH RELIABILITY

.025 A

15 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFT93,215 by NXP Semiconductors

BFT93,215

NXP Semiconductors

NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

LOW NOISE

.035 A

12 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.

HIGH RELIABILITY

.05 A

12 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BLT70,115 by NXP Semiconductors

BLT70,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): .25 A; Case Connection: COLLECTOR;

COLLECTOR

.25 A

3.5 pF

8 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.1 W

2.1 W

6 dB

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BLT80,115 by NXP Semiconductors

BLT80,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.25 A

3.5 pF

10 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BLT81,115 by NXP Semiconductors

BLT81,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

HIGH RELIABILITY

COLLECTOR

.5 A

4 pF

9.5 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

6 dB

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON