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BFG541,115

NXP Semiconductors

BFG541,115 by NXP Semiconductors

NXP Semiconductors' BFG541,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max IC of 0.12 A and hFE of 60, ideal for L Band switching applications. The small outline package with gull wing terminals supports surface mount assembly up to 260°C peak reflow temperature.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 3,971 parts In-Stock

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Digiode

USA . 1,395 parts In-Stock

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Anansix

USA . 725 parts In-Stock

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Nova Conductors

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Advanced Electronics

New Zealand . 80 parts In-Stock

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$1.296

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$1.179

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$1.063

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Corohmni

South Africa . 652 parts In-Stock

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AZTECH Wire

Italy . 197 parts In-Stock

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One Stop Electronics

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Ampacity Inc.

Singapore . 1,050 parts In-Stock

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Corphita

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Aranea Global

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UNI Independent Distributors

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Perfect Parts

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Microchip USA

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Overview

Enhance your RF signal switching applications with the BFG541,115 by NXP Semiconductors. Known for their top-quality manufacturing, NXP Semiconductors offers a reliable and efficient NPN transistor in a small outline package, perfect for L Band frequencies. With a high DC current gain and maximum power dissipation of 0.65W, this transistor provides value by delivering optimal performance and durability. Upgrade your designs today with the BFG541,115 and experience the benefits of superior quality and functionality in RF signal processing.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable package for the transistor, ensuring reliability in various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuits and compatibility with a wide range of components.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications where a single transistor is needed.

Transistor Application: SWITCHING

Ideal for switching applications, this transistor offers fast response times and efficient energy management.

Surface Mount: YES

The surface mount capability allows for easy and secure soldering onto PCBs, saving valuable board space.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, making it suitable for tight spaces and densely packed circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form offers a secure and reliable connection, ensuring stable performance in demanding environments.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for high-frequency applications with excellent performance.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in connection options and compatibility with various circuit layouts.

Maximum Power Dissipation (Abs): 0.65 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for efficient design layouts.

Maximum Power Dissipation Ambient: 0.65 W

This ensures the transistor can maintain its performance even in high-temperature environments.

Minimum DC Current Gain (hFE): 60

The high DC current gain ensures reliable amplification and signal processing in a wide range of applications.

Maximum Operating Temperature: 150 °C

Operating at high temperatures, this transistor can handle demanding environmental conditions without sacrificing performance.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring high performance and reliability in various applications.

Maximum Collector Current (IC): 0.12 A

With a high collector current rating, this transistor can handle large currents without compromising performance.

Terminal Finish: TIN

The tin terminal finish offers reliable soldering connections, ensuring a secure and stable electrical connection.

Terminal Position: DUAL

The dual terminal position provides flexibility in mounting and connection options, allowing for easy integration into different circuit layouts.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and ensures proper connectivity in applications requiring connection to the collector.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, allowing for efficient assembly processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the rigors of soldering processes without damage.

Nominal Transition Frequency (fT): 9000 MHz

The high nominal transition frequency allows for high-speed switching and amplification, making it ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG541,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.65 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG541,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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