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BFS25A,115

NXP Semiconductors

BFS25A,115 by NXP Semiconductors

NXP Semiconductors' BFS25A,115 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.032 W and operates at up to 175°C. Ideal for L Band applications like amplifiers due to its small outline package and high transition frequency.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 46,407 parts In-Stock

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-

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$0.233

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$0.194

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$0.173

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$0.173

Verical

USA . 43,099 parts In-Stock

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$0.216

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$0.216

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Digiode

USA . 321 parts In-Stock

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$0.181

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Vyrian

USA . 3,544 parts In-Stock

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Anansix

USA . 156 parts In-Stock

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Corphita

USA . 2,016 parts In-Stock

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$0.172

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Corohmni

South Africa . 216 parts In-Stock

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$0.189

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Native Components

USA . 647 parts In-Stock

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$1.026

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647

$1.026

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Northwest PG Solutions

USA . 341 parts In-Stock

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$1.129

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.811

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$1.648

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$1.485

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$1.811

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AZTECH Wire

Italy . 262 parts In-Stock

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$14.390

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Continental Prestige Electronics

USA . 112,407 parts In-Stock

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$0.250

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Metaverse IC Inc.

Canada . 9,200 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,915 parts In-Stock

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UNI Independent Distributors

Spain . 101 parts In-Stock

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Overview

Discover the power of the BFS25A,115 by NXP Semiconductors, a top-quality RF Small Signal Bipolar Junction Transistor (BJT) designed for amplification in L Band applications. With a focus on reliability and performance, NXP Semiconductors delivers cutting-edge technology in a compact package, perfect for surface mount applications. Experience seamless functionality and enhanced signal processing with this transistor, offering customers unmatched value and efficiency in their electronic projects. Upgrade your amplifier circuits with the BFS25A,115 and unlock a world of possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into existing circuits and compatibility with common amplifier setups.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation Ambient: 0.032 W

With a maximum power dissipation of 0.032 W, this transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 5 V

The maximum collector-emitter voltage of 5 V ensures safe operation within specified voltage limits, protecting the transistor from damage.

Nominal Transition Frequency (fT): 5000 MHz

With a high nominal transition frequency of 5000 MHz, this transistor is ideal for high-frequency signal amplification applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS25A,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.45 pF

Maximum Collector-Emitter Voltage:

5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.032 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS25A,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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