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BFS20-TAPE-7

NXP Semiconductors

BFS20-TAPE-7 by NXP Semiconductors

BFS20-TAPE-7 from NXP is an NPN RF BJT designed for very high frequency applications, featuring a max collector current of 25 mA and a nominal transition frequency of 450 MHz. It operates up to 150 °C with a gain (hFE) of 40. Ideal for compact surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,971 parts In-Stock

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Digiode

USA . 3,871 parts In-Stock

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Anansix

USA . 804 parts In-Stock

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Native Components

USA . 64 parts In-Stock

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$6.810

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64

$6.810

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One Stop Electronics

USA . 545 parts In-Stock

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$37.050

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545

$37.050

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UNI Independent Distributors

Spain . 5,265 parts In-Stock

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Corphita

USA . 2,929 parts In-Stock

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Northwest PG Solutions

USA . 394 parts In-Stock

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$6.674

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Overview

Elevate your designs with the BFS20-TAPE-7 from NXP Semiconductors, a top-tier choice for RF applications. Renowned for their commitment to quality and innovation, NXP delivers unmatched reliability in their components. This versatile NPN transistor excels in high-frequency performance, making it ideal for consumer electronics, telecommunications, and more. Experience enhanced efficiency and superior signal integrity, ensuring your projects stand out with every connection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good protection and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient switching and amplification, making it ideal for RF applications.

Configuration: SINGLE

A single configuration makes it compact and easy to integrate into circuit designs.

Surface Mount: YES

Surface mount technology allows for more efficient use of space on PCBs and facilitates automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape aids in layout flexibility and efficient heat dissipation.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering reliability and performance in surface mount applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This product can operate at very high frequencies, making it suitable for advanced RF communication systems.

No. of Terminals: 3

With 3 terminals, it simplifies integration and makes it compatible with various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package enables compact designs and reduces PCB space usage.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification, enhancing the performance of signal processing tasks.

Maximum Operating Temperature: 150 °C

The high temperature rating improves reliability in demanding environments.

Maximum Collector-Emitter Voltage: 20 V

A maximum collector-emitter voltage of 20V supports versatile circuit designs, ensuring compatibility with various applications.

Transistor Element Material: SILICON

Silicon material provides a good balance of performance, availability, and cost-effectiveness.

Maximum Collector Current (IC): 0.025 A

The ability to handle a maximum collector current of 25 mA makes it a strong performer in low-to-moderate power applications.

Terminal Position: DUAL

The dual terminal positioning facilitates better layout options on PCBs.

Nominal Transition Frequency (fT): 450 MHz

With a nominal transition frequency of 450 MHz, it excels in high-frequency applications, making it suitable for RF amplifiers and oscillators.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS20-TAPE-7 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS20-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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