Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BFS20-TAPE-7 from NXP is an NPN RF BJT designed for very high frequency applications, featuring a max collector current of 25 mA and a nominal transition frequency of 450 MHz. It operates up to 150 °C with a gain (hFE) of 40. Ideal for compact surface mount designs.
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The plastic/epoxy package provides good protection and durability, making the transistor suitable for various applications.
Being an NPN transistor allows for efficient switching and amplification, making it ideal for RF applications.
A single configuration makes it compact and easy to integrate into circuit designs.
Surface mount technology allows for more efficient use of space on PCBs and facilitates automated assembly processes.
The rectangular package shape aids in layout flexibility and efficient heat dissipation.
Gull wing terminals provide excellent soldering reliability and performance in surface mount applications.
This product can operate at very high frequencies, making it suitable for advanced RF communication systems.
With 3 terminals, it simplifies integration and makes it compatible with various circuit configurations.
The small outline package enables compact designs and reduces PCB space usage.
A minimum DC current gain of 40 ensures reliable amplification, enhancing the performance of signal processing tasks.
The high temperature rating improves reliability in demanding environments.
A maximum collector-emitter voltage of 20V supports versatile circuit designs, ensuring compatibility with various applications.
Silicon material provides a good balance of performance, availability, and cost-effectiveness.
The ability to handle a maximum collector current of 25 mA makes it a strong performer in low-to-moderate power applications.
The dual terminal positioning facilitates better layout options on PCBs.
With a nominal transition frequency of 450 MHz, it excels in high-frequency applications, making it suitable for RF amplifiers and oscillators.
RF Small Signal Bipolar Junction Transistors (BJT) BFS20-TAPE-7 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
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Transistor Element Material:
Nominal Transition Frequency (fT):
BFS20-TAPE-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
TM4C1294NCPDTI3
Texas Instruments
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WS
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Baneasa S A
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
KSZ9031RNXIC
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
LM317BD2TG
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
Silicon Standard
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Kingwell Technonlogy
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
Transys Electronics
MCH4016-TL-H
MCH4016-TL-H by Onsemi is a NPN RF BJT transistor with 4 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 10GHz. This small outline package with flat terminals operates up to 150°C and supports a max collector-emitter voltage of 12V.
MMBTH81LT1
MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.
MPSH10RL1
MPSH10RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It has a max Vce of 25V and fT of 650MHz, making it suitable for ultra-high frequency applications in cylindrical packages.
BFU530WX
NXP Semiconductors
The NXP Semiconductors BFU530WX is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max operating temperature of 150°C, a collector-emitter voltage of 12V, and a transition frequency of 11GHz. This small outline transistor comes in a plastic/epoxy package with gull wing terminals for surface mount assembly.
KSC1730O
KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.
2SC2814-2
Onsemi's 2SC2814-2 is an NPN RF BJT with a max fT of 320 MHz. It has a max IC of 0.03 A and operates up to 125 °C. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.
BF495C
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
2SC5347AE-TD-E
RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;
A5T4261
A5T4261 by Texas Instruments is a PNP BJT transistor with 3 terminals, 0.03A max collector current, and 2MHz fT. It is used as an amplifier in the ultra high frequency band applications due to its 15V max collector-emitter voltage and 0.5W power dissipation.
HFA3102BZ96
Renesas Electronics
HFA3102BZ96 by Renesas Electronics is an NPN RF BJT transistor with 6 elements and 14 terminals. It operates in the ultra-high frequency band up to 10GHz, ideal for amplifier applications. With a max collector-emitter voltage of 8V and a transition frequency of 10,000MHz, it offers high performance in a small outline package.
934067704215
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
BFS17
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .025 A; Terminal Form: GULL WING;
START499
STMicroelectronics
START499 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and a nominal transition frequency of 42 GHz. Its compact rectangular package supports surface mounting with gull-wing terminals. Ideal for ultra-high frequency circuits, it operates at a max collector-emitter voltage of 4.5 V.
MSC80186
MSC80186 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and boasts a nominal transition frequency of 3200 MHz. Its ceramic, metal-sealed package ensures reliability in L-band operations.
934067702215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
SS9018G
SS9018G by Onsemi is a NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 72, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
MPSH81
The Onsemi MPSH81 is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low capacitance of 0.85pF. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
TIS64A
TIS64A by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 150°C, and a transition frequency of 500MHz. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
HFA3096BZ
Intersil
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;
BFR520TT/R
NXP Semiconductors' BFR520TT/R is a NPN RF BJT transistor with 9000 MHz fT. It's a single configuration amplifier for L Band applications, featuring 0.07 A IC and Gull Wing terminals. This small outline package has a plastic body, tin finish, and can withstand peak reflow at 260°C for up to 40s.
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BFS20,215
Nexperia
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Emitter Voltage: 20 V;
The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.
BFS20W,115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
BFS20T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .025 A;
BFS20R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
BFS20R-TAPE-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
BFS20-T
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Collector Current (IC): .025 A; Package Style (Meter): SMALL OUTLINE;
BFS22A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .75 A; JESD-30 Code: O-MBCY-W3;
BFS20,235
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .025 A;
BFS20TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; Minimum DC Current Gain (hFE): 40;
BFS20/T3
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Collector Current (IC): .025 A; Peak Reflow Temperature (C): 260;
BFS20/T4
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
BFS20-TAPE-13
BFS20R-TAPE-7
BFS25A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .032 W; Maximum Collector Current (IC): .0065 A;
BFS23A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BFS20W
BFS20TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFS20
BFS20TA
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
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