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BFS25A

NXP Semiconductors

BFS25A by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .032 W; Maximum Collector Current (IC): .0065 A;

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 6,195 parts In-Stock

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$0.200

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$0.128

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$0.200

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R&J Components

USA . 62,967 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,855 parts In-Stock

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PC Components Company LLC

USA . 2,500 parts In-Stock

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Bristol Electronics

USA . 2,500 parts In-Stock

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Digiode

USA . 2,050 parts In-Stock

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ECAB

Sweden . 1,500 parts In-Stock

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Anansix

USA . 1,056 parts In-Stock

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Sea View Technologies

USA . 656 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 573 parts In-Stock

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Dan-Mar Components

USA . 573 parts In-Stock

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Vyrian

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Distributors (Availability)

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Native Components

USA . 11 parts In-Stock

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$0.989

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Northwest PG Solutions

USA . 213 parts In-Stock

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$1.088

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One Stop Electronics

USA . 260 parts In-Stock

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$9.050

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Kepictronics

USA . 306,000 parts In-Stock

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UNI Independent Distributors

Spain . 5,772 parts In-Stock

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Corphita

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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Perfect Parts

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS25A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.45 pF

Maximum Collector-Emitter Voltage:

5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.032 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS25A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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