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BFS20-TAPE-13

NXP Semiconductors

BFS20-TAPE-13 by NXP Semiconductors

BFS20-TAPE-13 from NXP is an NPN RF BJT designed for very high frequency applications. It features a max collector-emitter voltage of 20V, a nominal transition frequency of 450MHz, and operates up to 150 °C. Ideal for compact surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,567 parts In-Stock

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Digiode

USA . 1,772 parts In-Stock

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Anansix

USA . 1,164 parts In-Stock

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Native Components

USA . 668 parts In-Stock

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$6.810

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One Stop Electronics

USA . 332 parts In-Stock

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$58.050

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Corphita

USA . 3,103 parts In-Stock

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UNI Independent Distributors

Spain . 451 parts In-Stock

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Northwest PG Solutions

USA . 288 parts In-Stock

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Overview

Unlock the power of precision with NXP Semiconductors' BFS20-TAPE-13, an exceptional RF Small Signal BJT designed for superior performance in demanding applications. This reliable and compact transistor ensures high efficiency at very high frequencies, making it ideal for RF communication, audio processing, and signal amplification. With NXP's commitment to quality and innovation, elevate your projects with enhanced reliability and seamless integration. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, making it versatile for numerous RF applications.

Configuration: SINGLE

A single configuration simplifies circuit design and minimizes space, making it ideal for compact applications.

Surface Mount: YES

Surface mount technology enables high-density circuit designs and automated assembly, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space in PCB layouts, allowing for better integration into various designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and stability during assembly, ensuring reliable connections.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band ensures superior performance in RF applications, making it excellent for high-speed signals.

No. of Terminals: 3

The three terminals facilitate easy integration into circuits while maintaining necessary functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-efficient designs, suitable for small electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum current gain of 40 indicates reliable amplification capabilities, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature rating ensures stability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 20 V

The 20 V collector-emitter voltage rating allows for flexibility in various circuit designs while ensuring safe operation.

Transistor Element Material: SILICON

Silicon as the element material ensures excellent electrical properties and reliability, making it a common choice in transistors.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 25 mA, this transistor is suitable for low power applications while ensuring reliable operation.

Terminal Position: DUAL

Dual terminal positioning allows for flexibility in PCB layout and easier integration into multi-circuit designs.

Nominal Transition Frequency (fT): 450 MHz

A nominal transition frequency of 450 MHz indicates high speed, making this transistor ideal for fast switching applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS20-TAPE-13 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS20-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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