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BFS20W,115

NXP Semiconductors

BFS20W,115 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 8,861 parts In-Stock

1+ parts

$0.140

100+ parts

$0.064

1k+ parts

$0.057

10k+ parts

$0.052

8,861

$0.140

$0.064

$0.057

$0.052

Verical

USA . 9,000 parts In-Stock

1+ parts

-

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$0.010

9,000

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$0.010

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

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$0.110

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$0.091

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$0.081

9,000

-

$0.110

$0.091

$0.081

Chip1Stop

Japan . 234 parts In-Stock

1+ parts

-

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$0.040

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$0.039

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234

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$0.040

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Element14

Singapore . 100 parts In-Stock

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$0.133

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$0.128

100

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Arrow

USA . 3 parts In-Stock

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Digiode

USA . 3,401 parts In-Stock

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$0.038

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Chip Stock

USA . 98,000 parts In-Stock

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NAC Semi

USA . 81,000 parts In-Stock

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$0.580

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$0.580

ComSIT Distribution GmbH

Germany . 24,345 parts In-Stock

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Vyrian

USA . 5,393 parts In-Stock

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Anansix

USA . 2,036 parts In-Stock

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Rapid Electronics

USA . 1,106 parts In-Stock

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Corphita

USA . 699 parts In-Stock

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$0.036

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$0.036

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AZTECH Wire

Italy . 5,061 parts In-Stock

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$0.090

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Microchip USA

USA . 3,613 parts In-Stock

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$0.500

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Andel Nordic

Denmark . 2,468 parts In-Stock

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$0.530

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$0.368

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$0.368

2,468

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$0.368

Native Components

USA . 831 parts In-Stock

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$0.636

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831

$0.636

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Northwest PG Solutions

USA . 2,828 parts In-Stock

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$0.700

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Perfect Parts

USA . 57,120 parts In-Stock

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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UNI Independent Distributors

Spain . 7,846 parts In-Stock

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Kepictronics

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,245 parts In-Stock

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Supply Digital

USA . 1,077 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS20W,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS20W,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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