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BFS20R-TAPE-7

NXP Semiconductors

BFS20R-TAPE-7 by NXP Semiconductors

BFS20R-TAPE-7 by NXP Semiconductors is an NPN RF BJT designed for very high frequency applications. It features a max collector-emitter voltage of 20V, a nominal transition frequency of 450MHz, and operates up to 150 °C. Ideal for compact surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,506 parts In-Stock

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Vyrian

USA . 3,749 parts In-Stock

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3,749

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Anansix

USA . 539 parts In-Stock

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539

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Native Components

USA . 559 parts In-Stock

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$0.457

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$0.439

559

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$0.439

Northwest PG Solutions

USA . 766 parts In-Stock

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$0.503

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$0.444

766

$0.503

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$0.444

One Stop Electronics

USA . 722 parts In-Stock

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$20.050

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722

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Corphita

USA . 4,991 parts In-Stock

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4,991

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UNI Independent Distributors

Spain . 2,295 parts In-Stock

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Overview

Unlock unparalleled performance with the BFS20R-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This high-quality NPN transistor excels in very high-frequency applications, delivering reliable performance and efficiency for your designs. Its compact surface mount package ensures seamless integration into diverse electronic projects, making it the ideal choice for engineers seeking enhanced signal integrity and thermal stability. Elevate your development with NXP's trusted excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides excellent protection and thermal stability, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

The NPN configuration offers good amplification and switching capabilities, making it ideal for common signal applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces board space, making assembly easier.

Surface Mount: YES

Surface mount technology allows for compact PCB designs and high-density arrangements, improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape is conducive for efficient space utilization on PCBs, important for modern electronic designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide reliable mechanical connections, enhancing durability.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequencies, this transistor excels in RF applications, ensuring optimal signal integrity.

No. of Terminals: 3

The three terminals provide flexibility for various circuit topologies, facilitating compatibility with different designs.

Package Style (Meter): SMALL OUTLINE

A small outline package minimizes space requirements, perfect for integration into compact electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 signifies effective amplification capabilities, enhancing the performance of amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum temperature rating allows the device to operate reliably in demanding environments without failure.

Maximum Collector-Emitter Voltage: 20 V

The 20 V rating ensures compatibility with a broad range of power supply systems in typical electronic applications.

Transistor Element Material: SILICON

Silicon is known for its excellent electrical properties and reliability, making this transistor suitable for various applications.

Maximum Collector Current (IC): 0.025 A

This current rating supports adequate drive current for many standard applications without overheating or damage.

Terminal Position: DUAL

The dual terminal positioning configuration aids in simplifying PCB layout, enhancing assembly automation.

Nominal Transition Frequency (fT): 450 MHz

A nominal transition frequency of 450 MHz provides high-speed performance, making it ideal for RF and high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS20R-TAPE-7 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS20R-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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