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BFS540,115

NXP Semiconductors

BFS540,115 by NXP Semiconductors

NXP Semiconductors' BFS540,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max power dissipation of 0.5 W and operates at up to 175°C. Ideal for ultra-high frequency amplifier applications due to its small outline package and Gull Wing terminals.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51,183 parts In-Stock

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$0.291

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$0.241

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$0.215

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$0.291

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Verical

USA . 51,183 parts In-Stock

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$0.269

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$0.269

Distributors (In-Stock)

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Digiode

USA . 2,106 parts In-Stock

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$0.226

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Vyrian

USA . 5,238 parts In-Stock

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Anansix

USA . 2,145 parts In-Stock

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Cogito LLC

Ukraine . 2,100 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 718 parts In-Stock

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$0.118

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$0.113

718

$0.118

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$0.113

Northwest PG Solutions

USA . 773 parts In-Stock

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$0.130

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$0.114

773

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$0.114

Corphita

USA . 3,805 parts In-Stock

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$0.214

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$0.214

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AZTECH Wire

Italy . 693 parts In-Stock

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$11.850

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Perfect Parts

USA . 25,760 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 7,540 parts In-Stock

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UNI Independent Distributors

Spain . 6,854 parts In-Stock

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Overview

Enhance your electronic projects with the NXP Semiconductors BFS540,115 RF Small Signal Bipolar Junction Transistor. With ultra-high frequency capabilities and a maximum power dissipation of 0.5W, this NPN transistor is perfect for amplifier applications. The small outline package and gull wing terminals make installation a breeze. Trust in NXP Semiconductors' reputation for quality to ensure reliable performance. Elevate your designs with the BFS540,115 for superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design and ease of integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling power dissipation up to 0.5W, suitable for small signal applications.

Maximum Collector-Emitter Voltage: 15 V

Handles higher voltage levels, making it suitable for a variety of applications.

Nominal Transition Frequency (fT): 9000 MHz

High transition frequency ensures efficient amplification at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS540,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS540,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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