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BFG94,115

NXP Semiconductors

BFG94,115 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .06 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,980 parts In-Stock

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3,980

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Anansix

USA . 2,371 parts In-Stock

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Digiode

USA . 1,833 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Distributors (Availability)

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Native Components

USA . 303 parts In-Stock

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$0.170

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$0.163

303

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$0.163

Northwest PG Solutions

USA . 1,277 parts In-Stock

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$0.187

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$0.165

1,277

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$0.165

Corohmni

South Africa . 203 parts In-Stock

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$1.013

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$1.013

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.421

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$1.293

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$1.165

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100

$1.421

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$1.165

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AZTECH Wire

Italy . 715 parts In-Stock

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$14.270

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$14.270

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One Stop Electronics

USA . 1,003 parts In-Stock

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$32.050

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$32.050

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Microchip USA

USA . 5,233 parts In-Stock

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UNI Independent Distributors

Spain . 4,773 parts In-Stock

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Corphita

USA . 1,312 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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$0.854

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$0.791

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$0.791

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$0.791

Perfect Parts

USA . 112 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 50 parts In-Stock

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Glotronic Ltd.

UK . 40 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG94,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

45

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.7 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG94,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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