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BFS17W,115

NXP Semiconductors

BFS17W,115 by NXP Semiconductors

NXP Semiconductors' BFS17W,115 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.3 W. It operates in the ultra high frequency band at 1600 MHz, making it ideal for amplifier applications. The transistor has a max. collector-emitter voltage of 15 V and can handle a max. collector current of 0.05 A.

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Lifecycle Status

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9

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1k+

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Vyrian

USA . 9,291 parts In-Stock

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VNN

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Inventory MP

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Bristol Electronics

USA . 3,680 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Anansix

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 247 parts In-Stock

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One Stop Electronics

USA . 608 parts In-Stock

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$28.050

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Ampacity Inc.

Singapore . 159 parts In-Stock

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UNI Independent Distributors

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GreenTree Electronics

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Bastille Electronics

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Overview

Elevate your RF signal amplification with the BFS17W,115 by NXP Semiconductors. Crafted with precision and expertise, this NPN transistor offers unparalleled performance in the ultra-high frequency band. Ideal for amplifier applications, this small outline package delivers a maximum time at peak reflow temperature of 30 seconds at 260°C, ensuring reliability and durability. Experience seamless connectivity and top-notch quality with this premium product, designed to exceed your expectations in the world of RF electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplifiers and switching circuits, offering good performance.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easy to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards and space-saving designs.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient PCB layout and fitting into tight spaces.

Terminal Form: GULL WING

Gull wing terminals provide good solder joint reliability and mechanical strength.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-speed applications and handling signals in the ultrahigh frequency range.

No. of Terminals: 3

With 3 terminals, the transistor provides flexibility in connecting to external circuits.

Maximum Power Dissipation (Abs): 0.3 W

Can handle high power dissipation levels without compromising performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact designs.

Maximum Power Dissipation Ambient: 0.3 W

Maintains stable performance even at high ambient temperatures.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain ensures stable amplification of input signals.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, suitable for industrial applications.

Maximum Collector-Base Capacitance: 1.5 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

With a high collector-emitter voltage rating, it offers protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material ensures reliability and efficiency in signal processing.

Maximum Collector Current (IC): 0.05 A

Sufficient collector current rating for amplification and switching applications.

Terminal Finish: TIN

Tin terminal finish allows for easy soldering and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified time, ensuring reliability during assembly.

Peak Reflow Temperature °C: 260

Can endure high peak reflow temperatures during soldering process.

Nominal Transition Frequency (fT): 1600 MHz

High transition frequency allows for efficient signal amplification and processing at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17W,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17W,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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