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SINGLE RF Small Signal Bipolar Junction Transistors (BJT) 171

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SC5084-O(TE85L,F) by Toshiba

2SC5084-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;

LOW NOISE

.08 A

1.15 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

BFU530WF by NXP Semiconductors

BFU530WF

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 12 V;

LOW NOISE

.04 A

12 V

SINGLE

L BAND

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

11000 MHz

2SC3356-T1B-R25-A by Renesas Electronics

2SC3356-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;

LOW NOISE

.1 A

1 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

BFP450H6433XTMA1 by Infineon Technologies

BFP450H6433XTMA1

Infineon Technologies

BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.

LOW NOISE

.15 A

.4 pF

4 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP460H6433XTMA1 by Infineon Technologies

BFP460H6433XTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .07 A; Peak Reflow Temperature (C): NOT SPECIFIED;

LOW NOISE

.07 A

.45 pF

4.5 V

SINGLE

S BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

22000 MHz

BFP650E6327HTSA1 by Infineon Technologies

BFP650E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 37000 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Base Capacitance: .4 pF;

HIGH RELIABILITY, LOW NOISE

EMITTER

.15 A

.4 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

37000 MHz

BFP640FESDE6327 by Infineon Technologies

BFP640FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: X BAND;

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

BFP640H6433 by Infineon Technologies

BFP640H6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;

LOW NOISE, HIGH RELIABILITY

.05 A

.2 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

40000 MHz

BFP650FE6327 by Infineon Technologies

BFP650FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Transistor Application: AMPLIFIER;

.15 A

4 V

SINGLE

L BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

42000 MHz

BFP740FESDE6327 by Infineon Technologies

BFP740FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.08 pF

4.2 V

SINGLE

160

X BAND

R-PDSO-F4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

12.5 dB

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

47000 MHz

BFP780H6327XTSA1 by Infineon Technologies

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

EMITTER

.12 A

6.1 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

20000 MHz

BF886H6327XTSA1 by Infineon Technologies

BF886H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .025 A; Additional Features: LOW NOISE;

LOW NOISE

.025 A

4 V

SINGLE

L BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

45000 MHz

BF888H6327 by Infineon Technologies

BF888H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Collector Current (IC): .03 A; Case Connection: EMITTER;

LOW NOISE

EMITTER

.03 A

.14 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

47000 MHz

BFP420H6801 by Infineon Technologies

BFP420H6801

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Maximum Collector-Base Capacitance: .3 pF;

HIGH RELIABILITY, LOW NOISE

.035 A

.3 pF

4.5 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6327BTSA1 by Infineon Technologies

BFP420E6327BTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6433HTMA1 by Infineon Technologies

BFP420E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP740E6327HTSA1 by Infineon Technologies

BFP740E6327HTSA1

Infineon Technologies

BFP740E6327HTSA1 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for C band applications. It has a max operating temp of 150°C, fT of 44 GHz, and can handle up to 0.045 A collector current. This small outline transistor is designed for amplifier circuits requiring high frequency performance.

.045 A

.08 pF

4 V

SINGLE

160

C BAND

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

19.5 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

44000 MHz

BFU910FX by NXP Semiconductors

BFU910FX

NXP Semiconductors

NXP Semiconductors' BFU910FX is a NPN RF BJT transistor with 4 terminals, suitable for K Band applications. With a max fT of 90 GHz and IC of 0.015 A, it's ideal for amplifier circuits requiring high-frequency performance in small outline packages. The device features silicon germanium element material and can withstand peak reflow temp of 260°C per IEC-60134 standard.

LOW NOISE

.015 A

3 V

SINGLE

K BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

IEC-60134

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON GERMANIUM

90000 MHz

BFU520X,215 by NXP Semiconductors

BFU520X,215

NXP Semiconductors

NXP Semiconductors' BFU520X,215 is a NPN RF BJT with 4 terminals and L Band frequency band. It has a max power dissipation of 0.45W, fT of 10500MHz, and hFE of 60. Ideal for amplifier applications in surface mount designs due to its small outline package style and high transition frequency.

COLLECTOR

.05 A

.52 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.45 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

10500 MHz

2SC5065-O(TE85L,F) by Toshiba

2SC5065-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5065-Y(TE85L,F) by Toshiba

2SC5065-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5066-O,LF by Toshiba

2SC5066-O,LF

Toshiba

Toshiba's 2SC5066-O,LF is an NPN RF BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.03 A and hFE of 80, suitable for amplifier applications in the UHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

BFU520VL by NXP Semiconductors

BFU520VL

NXP Semiconductors

NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.

COLLECTOR

.05 A

.52 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

10500 MHz

BFU530XVL by NXP Semiconductors

BFU530XVL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

LOW NOISE

COLLECTOR

.065 A

.65 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

11000 MHz

BFU550VL by NXP Semiconductors

BFU550VL

NXP Semiconductors

The NXP Semiconductors BFU550VL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It has a max collector-emitter voltage of 16V, operating temperature up to 150°C, and transition frequency of 11GHz. This small outline transistor features Gull Wing terminals and can handle a max current of 0.05A.

LOW NOISE

COLLECTOR

.05 A

.72 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

11000 MHz

2SC5004-T1-A by Renesas Electronics

2SC5004-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

1.2 pF

12 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e6

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

Tin/Bismuth (Sn/Bi)

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

.5 V

NE85633-T1B-R25-A by Renesas Electronics

NE85633-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1 pF

12 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz