Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.
Median Price
$0.201
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$0.197
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$0.634
$0.609
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AZTECH Wire
$9.710
Ampacity Inc.
$19.050
QUARKTWIN TECHNOLOGY LTD
Corphita
Provides durability and protection for the transistor, making it suitable for various environments.
Commonly used for amplification purposes in electronic circuits.
Simplified design with only one transistor, easier to integrate into circuits.
Specifically designed for amplification tasks, ensuring high performance in audio or radio frequency applications.
Convenient for automated assembly processes, reducing production time and costs.
Efficient use of space, suitable for densely packed circuit designs.
Provides secure connections and easy soldering during PCB assembly.
Suitable for high-frequency applications, offering enhanced performance in the X-band frequency range.
Simple and compact design with a minimal number of terminals for easy integration.
Compact size saves space on the PCB and enables efficient circuit layouts.
Low capacitance ensures minimal signal distortion and high-frequency performance.
Suitable for low voltage applications, providing precise voltage regulation.
Offers a balance of performance and efficiency due to the unique material composition.
Able to handle moderate current levels, suitable for amplification tasks without exceeding the transistor's limits.
Allows for versatile connections and flexibility in circuit design.
Meets automotive industry standards for quality and reliability, ensuring long-term performance.
High transition frequency indicates excellent amplification capability at high frequencies.
RF Small Signal Bipolar Junction Transistors (BJT) BFP450H6433XTMA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFP450H6433XTMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Philips Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
FT232RL-REEL
FTDI
FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
ULN2803A
STMicroelectronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
SMBJ18CA
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
1N4148
Surge Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
BFT92
NXP Semiconductors
The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.
MMBTH10
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
JANS2N3866AUB
Defense Logistics Agency
JANS2N3866AUB by Defense Logistics Agency is an NPN RF BJT with 3.5 pF max collector-base capacitance, 30V max collector-emitter voltage, and 0.4A max collector current. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal-sealed co-fired package body material and small outline package style.
KSC1730Y
KSC1730Y by Onsemi is an NPN RF BJT with a max VCEsat of 0.5V, hFE of 120, and fT of 1100MHz. Ideal for amplifier applications in the UHF band due to its high transition frequency and low collector-emitter voltage. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.
BFR92ALT1
BFR92ALT1 by National Semiconductor is an NPN RF BJT with a max power dissipation of 0.273W, min hFE of 40, and max IC of 0.025A. It's used in surface mount applications for its silicon element material and tin/lead terminal finish.
SD1080-2
NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);
NSVMMBTH81LT1G
NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.
TIS126
TIS126 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 600MHz. It is commonly used as an amplifier in the very high-frequency band applications due to its 0.4W power dissipation capability and SILICON element material.
BFR520T
The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.
BFR92A
Temic Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Package Shape: RECTANGULAR;
BFS17NQTA
RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
SS9018E
SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.
CPH6001A-TL-E
CPH6001A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W, hFE of 90, and fT of 5000MHz. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations at temperatures up to 150°C.
IMX5T108
ROHM
ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.
HFA3127RZ
Renesas Electronics
HFA3127RZ by Renesas Electronics is a NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra high frequency band up to 8V and has a transition frequency of 8000 MHz. This chip carrier package features separate configuration with matte tin finish, suitable for surface mount assembly.
SD1891-03
SD1891-03 by STMicroelectronics is a NPN BJT with 15V VCEO, 1.1A IC, and 8.8W Ptot. Ideal for L Band applications, this transistor has a hFE of 15 and operates up to 200 °C. Its ceramic-metal package with flat terminals makes it suitable for flange mount configurations.
BF959RLRM
BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.
934067695115
RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
BF959RLRE
BF959RLRE by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operating temp up to 150 °C makes it suitable for various through-hole configurations.
BF240
BF240 by Onsemi is a NPN BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 40V, max collector current of 0.025A, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
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BFP450H6327XTSA1
BFP450H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, IC of 0.15A, and VCE of 4V. Ideal for amplifier circuits in small outline packages with Gull Wing terminals.
BFP420H6327XTSA1
Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.
BFP420FH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .06 A; Terminal Form: FLAT;
BFP405FH6327XTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Terminal Form: FLAT;
BFP405H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G4;
BFP420H6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BFP420E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Package Body Material: PLASTIC/EPOXY;
BFP405H6433TR
BFP420E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP420ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFP405E6327
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;
BFP405ECSP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP405H6740XT
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFP420E6327BTSA1
BFP420E6433
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
BFP405E6327XT
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Package Shape: RECTANGULAR;
BFP410
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .04 A;
BFP405F
BFP410H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .04 A; Package Shape: RECTANGULAR;
BFP405H6740
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .025 A; No. of Terminals: 4;
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