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BFP450H6433XTMA1

Infineon Technologies

BFP450H6433XTMA1 by Infineon Technologies

BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.

Median Price

$0.201

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$0.201

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10

$0.201

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Vyrian

USA . 5,710 parts In-Stock

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5,710

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Digiode

USA . 594 parts In-Stock

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594

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VNN

France . 200 parts In-Stock

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200

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.197

100+ parts

-

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$0.189

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500

$0.197

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$0.189

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Modulus Dynamics

Lithuania . 23,358 parts In-Stock

1+ parts

$0.634

100+ parts

$0.609

1k+ parts

$0.583

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23,358

$0.634

$0.609

$0.583

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AZTECH Wire

Italy . 504 parts In-Stock

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$9.710

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504

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Ampacity Inc.

Singapore . 748 parts In-Stock

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$19.050

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748

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QUARKTWIN TECHNOLOGY LTD

USA . 28,515 parts In-Stock

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Corphita

USA . 743 parts In-Stock

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743

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Overview

Elevate your RF signal amplification with the BFP450H6433XTMA1 by Infineon Technologies. Crafted with precision and expertise, this NPN transistor offers unparalleled performance in the X Band frequency range. Ideal for amplifier applications, this small outline package boasts a maximum collector-emitter voltage of 4V and a nominal transition frequency of 42,000 MHz. Experience seamless integration with its gull wing terminals and discover the quality and value that only Infineon Technologies can deliver. Upgrade your RF systems today with the BFP450H6433XTMA1 and unleash the power of innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

Commonly used for amplification purposes in electronic circuits.

Configuration: SINGLE

Simplified design with only one transistor, easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance in audio or radio frequency applications.

Surface Mount: YES

Convenient for automated assembly processes, reducing production time and costs.

Package Shape: RECTANGULAR

Efficient use of space, suitable for densely packed circuit designs.

Terminal Form: GULL WING

Provides secure connections and easy soldering during PCB assembly.

Highest Frequency Band: X BAND

Suitable for high-frequency applications, offering enhanced performance in the X-band frequency range.

No. of Terminals: 4

Simple and compact design with a minimal number of terminals for easy integration.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB and enables efficient circuit layouts.

Maximum Collector-Base Capacitance: 0.4 pF

Low capacitance ensures minimal signal distortion and high-frequency performance.

Maximum Collector-Emitter Voltage: 4 V

Suitable for low voltage applications, providing precise voltage regulation.

Transistor Element Material: SILICON GERMANIUM CARBON

Offers a balance of performance and efficiency due to the unique material composition.

Maximum Collector Current (IC): 0.15 A

Able to handle moderate current levels, suitable for amplification tasks without exceeding the transistor's limits.

Terminal Position: DUAL

Allows for versatile connections and flexibility in circuit design.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, ensuring long-term performance.

Nominal Transition Frequency (fT): 42000 MHz

High transition frequency indicates excellent amplification capability at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP450H6433XTMA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.4 pF

Maximum Collector-Emitter Voltage:

4 V

Configuration:

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM CARBON

Nominal Transition Frequency (fT):

Trade Compliance

BFP450H6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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