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BFU520X,215

NXP Semiconductors

BFU520X,215 by NXP Semiconductors

NXP Semiconductors' BFU520X,215 is a NPN RF BJT with 4 terminals and L Band frequency band. It has a max power dissipation of 0.45W, fT of 10500MHz, and hFE of 60. Ideal for amplifier applications in surface mount designs due to its small outline package style and high transition frequency.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

$0.130

100+ parts

$0.123

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$0.111

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$0.130

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Avnet

USA . 9,000 parts In-Stock

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$0.120

10k+ parts

$0.110

9,000

-

-

$0.120

$0.110

Distributors (In-Stock)

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Digiode

USA . 4,648 parts In-Stock

1+ parts

$0.124

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4,648

$0.124

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Vyrian

USA . 2,950 parts In-Stock

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2,950

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Anansix

USA . 1,035 parts In-Stock

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1,035

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Distributors (Availability)

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Corphita

USA . 4,207 parts In-Stock

1+ parts

$0.117

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4,207

$0.117

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AZTECH Wire

Italy . 722 parts In-Stock

1+ parts

$16.110

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722

$16.110

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Native Components

USA . 631 parts In-Stock

1+ parts

$35.790

100+ parts

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$34.358

631

$35.790

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$34.358

Northwest PG Solutions

USA . 1,982 parts In-Stock

1+ parts

$39.369

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1,982

$39.369

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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$0.149

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UNI Independent Distributors

Spain . 2,521 parts In-Stock

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Overview

Upgrade your RF amplification needs with the BFU520X,215 from NXP Semiconductors. With a reputation for quality and reliability, NXP delivers cutting-edge technology in a compact package. Ideal for L Band applications, this NPN transistor offers superior performance and efficiency. Experience seamless integration and enhanced signal amplification with the BFU520X,215. Unlock the potential of your RF projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the product lightweight and durable, ideal for portable applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into most amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy assembly onto circuit boards, saving time and effort.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during assembly.

No. of Terminals: 4

Four terminals provide flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 0.45 W

High power dissipation capability ensures the transistor can handle demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards, making it ideal for compact designs.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures stable and consistent performance in amplification tasks.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments.

Maximum Collector-Base Capacitance: 0.52 pF

Low collector-base capacitance helps in reducing signal distortion and ensuring high-frequency performance.

Maximum Collector-Emitter Voltage: 16 V

High collector-emitter voltage rating provides reliability and safety margin in demanding applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in amplifier circuits.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments without performance degradation.

Maximum Collector Current (IC): 0.05 A

High maximum collector current rating allows for handling higher currents in amplification tasks.

Terminal Position: DUAL

Dual terminal position provides versatility in circuit layout and design.

Case Connection: COLLECTOR

Case connected to collector ensures easy grounding and heat dissipation for efficient operation.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability in automotive and electronic applications.

Nominal Transition Frequency (fT): 10500 MHz

High nominal transition frequency allows for high-frequency signal amplification without distortion.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU520X,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.52 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU520X,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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