Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AOI4126
Alpha & Omega Semiconductor
AOI4126 by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 43A ID and 100W power dissipation. It operates in enhancement mode with a max temp of 175°C. Ideal for high-power applications requiring efficient switching capabilities.
SINGLE
43 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
100 W
FET General Purpose Powers
NO
2SK3431-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 83 A;
83 A
150 Cel
FET General Purpose Power
YES
AOD4454
AOD4454 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 0.11 ohm Max Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 100W and can withstand temperatures from -55 to 175 °C.
1.3 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
150 V
20 A
.11 ohm
31 pF
TO-252
R-PSSO-G2
2
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
40 A
GULL WING
SWITCHING
SILICON
NVD6820NLT4G
Onsemi
NVD6820NLT4G by Onsemi is a N-CHANNEL FET with 90V DS Breakdown Voltage, 310A IDM, and 144mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and high drain current capacity.
144 mJ
90 V
50 A
10 A
.0205 ohm
e3
260
310 A
AEC-Q101
MATTE TIN
30
NVD6414ANT4G
NVD6414ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 117A IDM, and 0.037 ohm RDS. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single-channel design with built-in diode in a small outline package for efficient power management.
154 mJ
100 V
32 A
.037 ohm
117 A
STP5NB60
STMicroelectronics
STP5NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 20A IDM, and 2 ohm RDS(on). It's used for switching applications in enhancement mode with a max power dissipation of 100W.
AVALANCHE RATED
300 mJ
600 V
5 A
2 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
Not Qualified
THROUGH-HOLE
STP4NB80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
230 mJ
800 V
4 A
3.3 ohm
16 A
STP45NE06
STP45NE06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM, 150mJ EAS, and 0.028 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 175 °C, making it suitable for high-power circuits.
150 mJ
60 V
45 A
.028 ohm
e0
180 A
TIN LEAD
STP3NB100
STP3NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS breakdown voltage, 12A IDM, and 244mJ EAS. Ideal for switching applications due to its single configuration with built-in diode and 6Ω RDS(on). Operating in enhancement mode, it can handle up to 100W power dissipation at a max temp of 150 °C.
244 mJ
1000 V
3 A
6 ohm
12 A
STB70NFS03LT4
STB70NFS03LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
500 mJ
30 V
70 A
.0095 ohm
TO-263AB
245
280 A
Matte Tin (Sn) - annealed
STP70NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn); Terminal Position: SINGLE;
Matte Tin (Sn)
STP60NF03L
STP60NF03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
650 mJ
60 A
.015 ohm
240 A
STB70NF03LT4
STB70NF03LT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 70A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications, it features a 280A Pulsed Drain Current and 175 °C Max Operating Temp in a PLASTIC/EPOXY package.
STB70NF3LLT4
STB70NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its 100W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount.
STP35NF10
STP35NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 100W.
35 A
.035 ohm
160 A
STD60NF3LLT4
STD60NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 100W and can withstand temperatures up to 175 °C.
700 mJ
.0105 ohm
TO-252AA
STP8NM60
STP8NM60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 32A IDM, and 1 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 100W.
200 mJ
8 A
1 ohm
STB70NF03L-1
STB70NF03L-1 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
TO-262AA
R-PSIP-T3
IN-LINE
STB12NM50ND
STB12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. Suitable for high-power switching circuits in various electronic devices.
350 mJ
500 V
11 A
.38 ohm
44 A
STD12NM50ND
STD12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features a 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. With a max power dissipation of 100W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
STP9NM60N
STP9NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 26A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
115 mJ
9 A
6.5 A
.745 ohm
26 A
STB13NM50N-1
STB13NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
.32 ohm
48 A
STB13NM50N
STB13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This compact FET ensures efficient power management in various electronic devices.
STP13NM50N
STP13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient thermal management.
TIN
STW13NM50N
STW13NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It operates in enhancement mode with a power dissipation of up to 100W. Its compact design ensures efficient thermal management in various electronic circuits.
TO-247
e3/e1
NOT SPECIFIED
MATTE TIN/TIN SILVER COPPER
STI12NM50N
STI12NM50N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It supports a max drain current of 11 A and power dissipation up to 100 W, operating at temperatures up to 150 °C. Ideal for various electronic circuits, it features a robust through-hole design.
NTB25P06
The Onsemi NTB25P06 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(on). The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.
600 mJ
25 A
27.5 A
.082 ohm
235
80 A
Other Transistors
STB100NH02LT4
STB100NH02LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs.
24 V
.006 ohm
IPB097N08N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (Abs) (ID): 70 A; Terminal Finish: MATTE TIN;
90 mJ
80 V
.0097 ohm
STD100NH03LT4
STD100NH03LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
NTB25P06G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
SUD23N06-31L-E3
Vishay Intertechnology
Vishay Intertechnology's SUD23N06-31L-E3 is a N-channel FET with 60V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features a built-in diode, 0.031 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this transistor has a max power dissipation of 100W and can withstand temperatures from -55 to 175°C.
20 mJ
23 A
.031 ohm
MATTE TIN OVER NICKEL
STD22NM20NT4
STD22NM20NT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 22 A, breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for power management in compact devices.
380 mJ
200 V
22 A
.105 ohm
88 A
STB12NM50N
STB12NM50N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 11A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
STD12NM50N
STD12NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 11A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STP12NM50N
STP12NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 44A IDM, and 0.38 ohm RDS(on). Ideal for SWITCHING applications due to its 100W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with Matte Tin finish, suitable for high-temp environments up to 150°C.
STD95NH02LT4
STD95NH02LT4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
.009 ohm
320 A
STB8NM60D
STB8NM60D by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 32A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
STP8NM60D
STP8NM60D by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 8A max drain current. It offers a low on-resistance of 1Ω and operates at up to 150 °C. This versatile FET is suitable for various power management tasks.
NTD5406NG
NTD5406NG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 150A IDM, and 0.01 ohm RDS(on). With a max power dissipation of 100W and operating temperature of 175 °C, it is ideal for high-power switching circuits in various electronic devices.
450 mJ
40 V
.01 ohm
150 A
NTD5406NT4G
NTD5406NT4G by Onsemi is an N-channel power FET with a 40V DS breakdown voltage and 150A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.01 ohm max RDS(on), and operates in enhancement mode.
12.2 A
300 pF
IPU103N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
.0103 ohm
TO-251
200 A
IPB16CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Peak Reflow Temperature (C): 245; Maximum Pulsed Drain Current (IDM): 212 A;
107 mJ
53 A
.0165 ohm
212 A
IPD16CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Avalanche Energy Rating (EAS): 107 mJ; Package Style (Meter): SMALL OUTLINE;
.016 ohm
IPP16CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 53 A;
85 V
STD11NM60N-1
STD11NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
ISOLATED
.45 ohm
STD11NM60N
STD11NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for efficient power management in compact electronic devices.
STP11NM60N
STP11NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 100W power dissipation. Its robust design ensures reliability in high-temperature environments up to 150 °C.
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