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100 W Power Field Effect Transistors (FET) 55

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL62P3LLH6 by STMicroelectronics

STL62P3LLH6

STMicroelectronics

STL62P3LLH6 by STMicroelectronics is a P-channel MOSFET designed for efficient power management. It supports a max drain current of 62 A and power dissipation of 100 W, making it ideal for high-performance applications in compact designs. With an operating temp up to 175 °C, it's perfect for demanding environments.

SINGLE

62 A

62 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

P-CHANNEL

100 W

Other Transistors

YES

NOT SPECIFIED

DMTH8012LPS-13 by Diodes Incorporated

DMTH8012LPS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;

10.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

50 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

100 W

200 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

STD5406NT4G-VF01 by Onsemi

STD5406NT4G-VF01

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn) - annealed; Case Connection: DRAIN;

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

70 A

70 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

300 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

100 W

150 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STD80N6F7 by STMicroelectronics

STD80N6F7

STMicroelectronics

STD80N6F7 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 60 V, and operates at temperatures from -55 °C to 175 °C. Ideal for power management in compact designs.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

40 A

40 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

100 W

160 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVD5484NLT4G-VF01 by Onsemi

NVD5484NLT4G-VF01

Onsemi

NVD5484NLT4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 305A IDM, and 0.023 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

54 A

54 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

100 W

305 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

DMT32M5LPSW-13 by Diodes Incorporated

DMT32M5LPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (ID): 100 A; Maximum Operating Temperature: 150 Cel;

140 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

186 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

100 W

350 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

TK12P60W,RVQ(S by Toshiba

TK12P60W,RVQ(S

Toshiba

Toshiba's TK12P60W,RVQ(S is an N-CHANNEL FET for SWITCHING applications. Features include 600V DS Breakdown Voltage, 46A IDM, and 0.34 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring fast operation and low resistance.

140 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

11.5 A

.34 ohm

METAL-OXIDE SEMICONDUCTOR

2.8 pF

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

46 A

YES

GULL WING

SINGLE

SWITCHING

SILICON