Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IKW50N65WR5XKSA1
Infineon Technologies
IKW50N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and collector current of 80A. It features a turn-off time of 507ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
80 A
650 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
e3
1
3
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
507 ns
62 ns
FF1400R12IP4PBOSA1
FF1400R12IP4PBOSA1 by Infineon Technologies is an IGBT with 2 N-CHANNEL elements in a SERIES CONNECTED configuration. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 1200ns, making it ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for various industrial uses.
ISOLATED
1200 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X12
2
12
NOT SPECIFIED
IEC-61140; UL APPROVED
UNSPECIFIED
UPPER
1200 ns
340 ns
IKQ100N60TXKSA1
IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.
160 A
600 V
393 ns
83 ns
IKW50N65EH5XKSA1
IKW50N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 80A max collector current. It features a single configuration with built-in diode, ideal for power control applications. With a turn-off time of 220ns and turn-on time of 54ns, it offers efficient performance in through-hole package style.
COLLECTOR
220 ns
54 ns
IKZ75N65EL5XKSA1
IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
100 A
5.8 V
20 V
R-PSFM-T4
4
175 Cel
536 W
474 ns
133 ns
1.35 V
FF1000R17IE4DPB2BOSA1
FF1000R17IE4DPB2BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It features a series connected, center tap configuration with 2 elements and built-in diode for power control applications. This UL approved transistor has a nominal turn off time of 1910ns and turn on time of 830ns, making it ideal for high-power switching operations.
1700 V
UL APPROVED
1910 ns
830 ns
FF1200R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PUFM-X10;
R-PUFM-X10
10
680 ns
430 ns
FF900R12IP4DVBOSA1
FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
GENERAL PURPOSE
1300 ns
370 ns
FF900R12IP4PBOSA1
FF900R12IP4PBOSA1 by Infineon Technologies is an IGBT with 2 N-CHANNEL elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1300ns. Ideal for power control applications, this UL approved transistor operates from -40°C with a turn-on time of 370ns.
FF900R12IP4VBOSA1
FF900R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 1300ns and a nominal turn-on time of 370ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and inverters.
FF1000R17IE4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Reference Standard: UL APPROVED; Package Shape: RECTANGULAR; No. of Terminals: 12;
1890 ns
720 ns
FF1400R17IP4PBOSA1
Infineon Technologies' FF1400R17IP4PBOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max Vce of 1700V and toff of 2190ns. Ideal for power control applications, this UL APPROVED transistor operates from -40°C with a turn-on time of 1030ns.
2190 ns
1030 ns
FF1800R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; JESD-30 Code: R-PUFM-X14; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
R-PUFM-X14
14
800 ns
510 ns
FF1800R17IP5BPSA1
FF1800R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max Vce of 1700V and toff of 1060ns. Ideal for power control applications due to its series connected configuration.
1060 ns
530 ns
FF200R12KE4PHOSA1
FF200R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
325 ns
FF300R12KE4PHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-XUFM-X7;
FF300R12KS4PHOSA1
FF300R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 590ns, making it ideal for POWER CONTROL applications. This UL APPROVED transistor operates from -40°C with a fast Nominal Turn On Time of 180ns.
590 ns
180 ns
FF300R12KT3PEHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum VCEsat: 2.15 V; Maximum Collector-Emitter Voltage: 1200 V; Case Connection: ISOLATED;
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
6.5 V
125 Cel
215 ns
2.15 V
FF300R12KT4PHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn Off Time (toff): 720 ns; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;
6.4 V
150 Cel
230 ns
FF400R12KT3PEHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: UL APPROVED; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FF400R17KE4EHOSA1
FF400R17KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max VCEsat of 2.3V, ideal for power control applications. With a max operating temperature of 150°C and collector-emitter voltage of 1700V, it offers efficient performance in high-power systems.
6.25 V
850 ns
320 ns
2.3 V
FF400R17KE4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
FF450R12KE4EHOSA1
FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
520 A
FF450R12KE4PHOSA1
FF450R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
FF450R12KT4PHOSA1
FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.
FF600R12IE4VBOSA1
FF600R12IE4VBOSA1 by Infineon is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, turn-off time of 1020ns, and turn-on time of 410ns. Ideal for applications requiring high power switching in industrial settings due to its isolated case connection and flange mount package style.
1020 ns
410 ns
FF600R12KE4BOSA1
FF600R12KE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and a turn off time of 630ns, making it ideal for POWER CONTROL applications. This UL APPROVED transistor operates in temperatures as low as -40°C and comes in a FLANGE MOUNT package style.
630 ns
232 ns
FF600R12KE4EBOSA1
FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.
FF650R17IE4DPB2BOSA1
FF650R17IE4DPB2BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCE of 1700V and toff of 1870ns, making it ideal for power control applications. The transistor operates in temperatures as low as -40°C and is UL approved for reliability.
1870 ns
765 ns
FF900R12IE4PBOSA1
FF900R12IE4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCE of 1200V and turn-off time of 940ns, making it ideal for power control applications. The transistor is UL approved and operates in temperatures as low as -40°C.
940 ns
350 ns
FF900R12IE4VBOSA1
FF900R12IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 940ns and a nominal turn-on time of 350ns. This IGBT is commonly used in applications that require high power switching, such as motor drives and power supplies.
IGZ50N65H5XKSA1
IGZ50N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 85A. It has a nominal turn-off time of 311ns and a turn-on time of 27ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
85 A
311 ns
27 ns
IKD06N60RAATMA2
IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
LOW CONDUCTION LOSS
12 A
TO-252
R-PSSO-G2
SMALL OUTLINE
AEC-Q101
YES
GULL WING
335 ns
22 ns
IKD06N60RFAATMA1
IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.
5.7 V
100 W
149 ns
17 ns
2.5 V
IKD10N60RAATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Transistor Application: GENERAL PURPOSE; Terminal Form: GULL WING;
20 A
428 ns
24 ns
IKD10N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;
150 W
198 ns
FF650R17IE4PBOSA1
FF650R17IE4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCE of 1700V and toff of 1870ns, making it ideal for power control applications. This UL APPROVED transistor operates from -40°C with a ton of 720ns in a FLANGE MOUNT package style.
FF650R17IE4VBOSA1
FF650R17IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max Collector-Emitter Voltage of 1700V and can handle a Collector Current of 930A. This RECTANGULAR package is ideal for applications requiring high power switching in industrial settings.
930 A
IGW40N65F5AXKSA1
IGW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 74A. It has a turn-off time of 200ns and turn-on time of 30ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installation.
74 A
200 ns
30 ns
IGW40N65H5AXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 74 A; No. of Terminals: 3; Transistor Element Material: SILICON;
203 ns
31 ns
IGW50N65H5AXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
4.8 V
270 W
213 ns
33 ns
2.1 V
IKD03N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE; Peak Reflow Temperature (C): NOT SPECIFIED;
5 A
265 ns
18 ns
IKD04N60RFAATMA1
IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
8 A
216 ns
IKB20N60TAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;
40 A
TO-263AB
156 W
287 ns
35 ns
2.05 V
IKP20N60TAHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
TO-220AB
IKW20N60TAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Application: POWER CONTROL; Peak Reflow Temperature (C): NOT SPECIFIED;
299 ns
36 ns
IKW75N60TAFKSA1
IKW75N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, meeting AEC-Q101 standards.
401 ns
69 ns
F4100R17ME4B11BPSA1
N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 155 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 260 ns;
155 A
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X13
13
UL RECOGNIZED
790 ns
260 ns
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