Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IRG4PC50FD-EPBF
Infineon Technologies
IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.
ULTRA FAST SOFT RECOVERY
COLLECTOR
70 A
600 V
SINGLE WITH BUILT-IN DIODE
TO-247AD
R-PSFM-T3
1
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
660 ns
86 ns
IKQ40N120CT2XKSA1
IKQ40N120CT2XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 530ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
80 A
1200 V
TO-247
e3
-40 Cel
TIN
530 ns
74 ns
IKQ50N120CH3XKSA1
IKQ50N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it has a turn-off time of 466ns and turn-on time of 68ns. Package style is flange mount with through-hole terminals.
100 A
466 ns
68 ns
IKY50N120CH3XKSA1
IKY50N120CH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 100A. It has a turn-off time of 462ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
R-PSFM-T4
4
462 ns
62 ns
F3L400R12PT4PB26BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
ISOLATED
COMPLEX
R-XUFM-X18
18
UNSPECIFIED
UL RECOGNIZED
UPPER
610 ns
350 ns
FF900R12IE4VPBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PUFM-X10; No. of Terminals: 10;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X10
2
10
UL APPROVED
940 ns
FP150R12KT4B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; Reference Standard: UL RECOGNIZED; Case Connection: ISOLATED;
R-XUFM-X43
7
43
750 ns
270 ns
FP150R12KT4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 43; No. of Elements: 7; Package Style (Meter): FLANGE MOUNT;
FP150R12KT4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 270 ns;
FP150R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
6.35 V
20 V
150 Cel
2.1 V
FP75R17N3E4B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 305 ns; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;
1700 V
R-XUFM-X35
35
800 ns
305 ns
FS225R12OE4PBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Transistor Application: POWER CONTROL; Case Connection: ISOLATED;
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X29
6
29
570 ns
230 ns
FS300R12OE4PNOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
650 ns
280 ns
FS500R17OE4DPBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 29; Reference Standard: UL RECOGNIZED; No. of Elements: 6;
1080 ns
330 ns
FZ1200R12HE4HOSA2
FZ1200R12HE4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1825A max collector current. It has a complex configuration for power control applications, featuring a nominal turn-off time of 1130ns and turn-on time of 660ns. The package style is flange mount with 7 terminals in a rectangular shape.
1825 A
R-PUFM-X7
1130 ns
FZ1200R17HE4HOSA2
Infineon's FZ1200R17HE4HOSA2 IGBT features N-CHANNEL configuration, 1700V VCEsat, and 7800W power dissipation. Ideal for power control applications with UL approval, it operates b/w -40 to 150°C temperatures efficiently.
6.4 V
7800 W
1760 ns
955 ns
2.3 V
IKW50N60TAFKSA1
IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
AEC-Q101
396 ns
60 ns
IKW50N65F5AXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
650 V
4.8 V
175 Cel
270 W
196 ns
35 ns
IKW50N65H5AXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR; Nominal Turn On Time (ton): 33 ns;
213 ns
33 ns
FF1200R17IP5BPSA1
FF1200R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1700V and Nominal Turn Off Time of 970ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for high-power systems requiring fast switching speeds.
970 ns
460 ns
FF1800R17IP5PBPSA1
FF1800R17IP5PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and turn on time of 530ns. Ideal for power control applications due to its PLASTIC/EPOXY package and -40°C min operating temperature.
R-PUFM-X14
14
1060 ns
IKA08N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
11 A
TO-220AB
147 ns
30 ns
IKZ50N65NH5XKSA1
IKZ50N65NH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 85A IC, and 30ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
85 A
313 ns
IKA15N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 17 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
17 A
202 ns
50 ns
IKA15N65ET6XKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 17 A; Maximum Collector-Emitter Voltage: 650 V; Package Shape: RECTANGULAR;
IKQ40N120CH3XKSA1
IKQ40N120CH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for power control applications and has a nominal turn-off time of 444ns.
444 ns
76 ns
IKY40N120CH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247; Nominal Turn Off Time (toff): 439 ns;
439 ns
61 ns
IKY75N120CH3XKSA1
IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
150 A
468 ns
73 ns
IKZ75N65ES5XKSA1
IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
475 ns
70 ns
AUIRGPS4070D0
AUIRGPS4070D0 by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 195A max collector current, and 150ns turn on time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
195 A
TO-247AA
-55 Cel
285 ns
150 ns
DDB6U180N16RRB37BOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Reference Standard: UL RECOGNIZED; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -40 Cel;
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
620 ns
210 ns
DDB6U180N16RRPB37BPSA1
DDB6U180N16RRPB37BPSA1 by Infineon is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage. It features a single configuration with built-in diode, three-phase diode bridge, and thermistor for power control applications. This UL recognized transistor has a turn-off time of 620ns and turn-on time of 210ns, suitable for flange mount installations.
R-XUFM-X24
24
DF160R12W2H3FB11BPSA1
Infineon's DF160R12W2H3FB11BPSA1 IGBT features N-CHANNEL polarity, 1200V max collector-emitter voltage, and 375ns nominal turn-off time. Ideal for power control applications with complex configuration, it has 4 elements and operates from -40°C with a 30-terminal flange mount package.
R-XUFM-X30
30
375 ns
40 ns
DF200R12W1H3FB11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X18; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1200 V;
27 ns
DF75R12W1H4FB11BOMA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL; JESD-30 Code: R-XUFM-X17;
R-XUFM-X17
17
500 ns
58 ns
DF80R12W2H3FB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X22
22
IFS200B12N3E4B31BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 280 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
280 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
R-XUFM-X41
41
528 ns
185 ns
DF200R12W1H3B27BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Nominal Turn Off Time (toff): 475 ns; Package Style (Meter): FLANGE MOUNT;
50 A
IFS150B17N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
R-XUFM-X37
37
760 ns
F3L75R12W1H3B11BPSA1
Infineon's F3L75R12W1H3B11BPSA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring N-channel complex configuration with 4 elements, such as power electronics and motor drives.
45 A
R-XUFM-X21
21
GENERAL PURPOSE
385 ns
42 ns
F3L75R12W1H3B27BOMA1
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
F450R07W1H3B11ABOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Nominal Turn On Time (ton): 32 ns; JESD-30 Code: R-XUFM-X20;
55 A
R-XUFM-X20
20
203 ns
32 ns
FB10R06KL4GB1BOMA1
Infineon Technologies' FB10R06KL4GB1BOMA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 260ns nominal turn-off time. It has a complex configuration with 7 elements in a rectangular package style for flange mount applications.
15 A
260 ns
FB15R06KL4B1BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 19 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
19 A
R-XUFM-X26
26
249 ns
71 ns
FS3L25R12W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 12; Transistor Element Material: SILICON;
40 A
R-XUFM-X34
12
34
295 ns
95 ns
IFF300B12N2E4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1200 V; No. of Terminals: 28;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
R-XUFM-X28
28
540 ns
310 ns
IKD06N60RAATMA1
IKD06N60RAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, suitable for applications requiring fast switching such as motor drives and power supplies.
LOW CONDUCTION LOSS
12 A
TO-252
R-PSSO-G2
SMALL OUTLINE
YES
GULL WING
335 ns
22 ns
SIGC15T60EX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Terminal Position: UPPER;
30 A
R-XUUC-N2
UNCASED CHIP
NO LEAD
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