Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BSM150GB120DLCHOSA1
Infineon Technologies
Infineon's BSM150GB120DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 1200V max. collector-emitter voltage, and 300A max. collector current. It features a fast turn-off time of 650ns and turn-on time of 190ns, making it ideal for high-power applications like motor drives and inverters.
ISOLATED
300 A
1200 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
NO
UPPER
SILICON
650 ns
190 ns
BSM300GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUFM-X5;
570 A
SINGLE WITH BUILT-IN DIODE
R-XUFM-X5
1
5
FB10R06KL4BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR; No. of Terminals: 17;
16 A
600 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X17
6
17
260 ns
60 ns
FB20R06YE3B1BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Package Shape: RECTANGULAR; Terminal Position: UPPER;
27 A
COMPLEX
R-XUFM-X26
26
33 ns
FD1000R33HE3KBPSA1
Infineon's FD1000R33HE3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max collector-emitter voltage of 3300V, collector current of 1000A, and turn-off time of 3550ns. Ideal for power control applications due to its common gate configuration and silicon material.
1000 A
3300 V
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X9
9
POWER CONTROL
3550 ns
1150 ns
FF600R12ME4CB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4050 W; Maximum Collector Current (IC): 1060 A; Package Shape: RECTANGULAR;
1060 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
20 V
R-XUFM-X11
11
150 Cel
4050 W
UL RECOGNIZED
Insulated Gate BIP Transistors
710 ns
300 ns
2.1 V
FF600R12ME4CBOSA1
FF600R12ME4CBOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 1060A, suitable for POWER CONTROL applications. With a turn off time of 710ns and turn on time of 300ns, it offers efficient performance in RECTANGULAR package style.
FP10R06KL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON;
R-XUFM-X23
23
FP10R12KE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;
15 A
481 ns
80 ns
FP15R12KE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;
508 ns
97 ns
FP20R06KL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn On Time (ton): 60 ns;
25 A
185 ns
FS25R12YT3BOMA1
Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
40 A
R-XUFM-X22
22
640 ns
120 ns
FS35R12YT3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
FS50R06YL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X23;
55 A
160 ns
55 ns
FS800R07A2E3BOSA2
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Terminals: 33; Package Style (Meter): FLANGE MOUNT;
700 A
650 V
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X33
33
690 ns
230 ns
FT150R12KE3B5BOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;
200 A
COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X18
3
18
850 ns
350 ns
FZ1000R33HE3BPSA1
Infineon's FZ1000R33HE3BPSA1 is a N-CHANNEL IGBT with 2 elements in parallel. It has a max collector current of 1000A and turn off time of 3550ns, suitable for power control applications. The transistor operates at a max voltage of 3300V, featuring silicon material and isolated case connection.
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
FZ1000R33HL3BPSA1
FZ1000R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 3300V. It has a nominal turn off time of 4700ns and a nominal turn on time of 1050ns. This IGBT is commonly used in applications requiring high voltage switching capabilities.
4700 ns
1050 ns
FZ1200R33HE3BPSA1
FZ1200R33HE3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3300V max collector-emitter voltage. It has 3 elements, complex configuration, and 1150ns turn on time. Ideal for power control applications due to its isolated case connection and silicon transistor element material.
R-XUFM-X3
FZ1500R33HE3BPSA1
Infineon's FZ1500R33HE3BPSA1 is an N-CHANNEL IGBT with 3300V max. collector-emitter voltage, 1150ns turn on time, and 3550ns turn off time. Ideal for power control applications due to its complex configuration and isolated case connection in a rectangular package style.
FZ1500R33HL3BPSA1
FZ1500R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3300V max collector-emitter voltage. It features a complex configuration, 4700ns turn-off time, and 1050ns turn-on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
IKA06N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 17 ns;
HIGH SPEED
10 A
TO-220AB
R-PSFM-T3
PLASTIC/EPOXY
THROUGH-HOLE
SINGLE
249 ns
17 ns
IKA15N60TXKSA1
IKA15N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 14.7A. It features a built-in diode, turn-off time of 291ns, and turn-on time of 32ns. Ideal for power control applications due to its single configuration and isolated case connection in a rectangular package style.
HIGH SWITCHING SPEED
14.7 A
e3
TIN
291 ns
32 ns
DDB6U180N16RR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
140 A
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
6.5 V
-40 Cel
515 W
UL APPROVED
620 ns
210 ns
2.2 V
IRGIB4630DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Terminal Position: SINGLE; Maximum Operating Temperature: 175 Cel;
175 Cel
206 W
65 ns
1.95 V
F475R07W1H3B11ABOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 275 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Voltage: 20 V;
75 A
R-XUFM-X20
4
20
275 W
213 ns
1.85 V
FD1200R17HP4KB2BOSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
1700 V
6.4 V
R-PUFM-X7
6500 W
1800 ns
900 ns
2.25 V
FD16001200R17HP4KB2BOSA1
Infineon's FD16001200R17HP4KB2BOSA1 is an N-CHANNEL IGBT with 2 elements & built-in diode, ideal for power control applications. Featuring a max VCEsat of 2.25V, it can handle up to 10500W power dissipation at 150°C. With a max VCE of 1700V and turn-off time of 1710ns, this UL-approved transistor ensures efficient performance in high-power systems.
R-PUFM-X9
10500 W
1710 ns
FD800R17HP4KB2BOSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5200 W; Nominal Turn Off Time (toff): 2000 ns; Maximum Collector-Emitter Voltage: 1700 V;
5200 W
2000 ns
670 ns
FF300R12KE4EHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1600 W; Maximum Collector Current (IC): 460 A; Minimum Operating Temperature: -40 Cel;
460 A
1600 W
800 ns
325 ns
2.15 V
FF600R12IP4VBOSA1
FF600R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCEsat of 2.05V and can handle up to 1200V collector-emitter voltage. Ideal for high-power applications requiring fast switching capabilities with a max power dissipation of 3350W at temperatures ranging from -40 to 150°C.
R-PUFM-X10
10
3350 W
370 ns
2.05 V
FF600R12ME4AB11BOSA1
Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.
950 A
FS215R04A1E3DBOMA1
Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
290 A
400 V
N-Channel
715 W
340 ns
150 ns
1.7 V
FS400R07A1E3H5BPSA1
N-Channel; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Nominal Turn Off Time (toff): 580 ns;
500 A
750 W
580 ns
200 ns
1.9 V
FS600R07A2E3B31BOSA1
N-Channel; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 530 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 1.5 V; Maximum Collector-Emitter Voltage: 650 V;
530 A
1300 W
540 ns
1.5 V
FS800R07A2E3B31BOSA1
Infineon's FS800R07A2E3B31BOSA1 is an N-Channel IGBT with VCEsat of 1.5V, toff of 620ns, and Pmax of 1550W. Ideal for high-power applications like industrial motor drives due to its max VCE of 650V, IC of 700A, and operating temp range from -40°C to 150°C.
1550 W
FZ1600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 10500 W; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 1710 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 805 ns;
805 ns
FZ1800R17HP4B29BOSA2
N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
11500 W
1860 ns
880 ns
FZ3600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 19500 W; Nominal Turn Off Time (toff): 2095 ns; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum VCEsat: 2.25 V; Maximum Operating Temperature: 150 Cel;
19500 W
2095 ns
945 ns
IRG4BC30S-STRLP
IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.
COLLECTOR
34 A
R-PSSO-G2
-55 Cel
SMALL OUTLINE
YES
GULL WING
1550 ns
40 ns
BSM400GA120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 550 A; Nominal Turn On Time (ton): 210 ns; Package Body Material: UNSPECIFIED;
550 A
630 ns
FS3L30R07W2H3FB11BPSA2
Infineon Technologies' FS3L30R07W2H3FB11BPSA2 is an N-CHANNEL IGBT with 12 elements, 32 terminals, and a max. collector-emitter voltage of 650V. It has a complex configuration for power control applications, offering a nominal turn-off time of 350ns and max. collector current of 45A. The transistor's silicon material and UL approval make it suitable for high-power systems requiring fast switching capabilities.
45 A
R-XUFM-X32
12
32
88 ns
FS3L50R07W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn On Time (ton): 84 ns; JESD-30 Code: R-XUFM-X32;
346 ns
84 ns
FZ1200R12HP4HOSA2
FZ1200R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, max. collector-emitter voltage of 1200V, and max. collector current of 4930A. It has a complex configuration for power control applications, with nominal turn-off time of 1550ns and turn-on time of 890ns. The package style is flange mount with isolated case connection.
4930 A
890 ns
FZ1200R17HP4B2BOSA2
FZ1200R17HP4B2BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 1810ns turn-off time, and 850ns turn-on time. Ideal for power control applications, this transistor features a plastic/epoxy package body material and flange mount style for isolated case connection.
1810 ns
FZ1200R17HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X4; Terminal Form: UNSPECIFIED;
1200 A
R-XUFM-X4
960 ns
FZ1600R12HP4HOSA2
FZ1600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 4930A max collector current. It has a complex configuration, 3 elements, and is used for power control applications. With a turn off time of 1550ns and turn on time of 890ns, it offers efficient performance in high-power systems.
FZ1600R17HP4HOSA2
FZ1600R17HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It features a complex configuration and 2095ns nominal turn off time, making it ideal for power control applications. The transistor element is made of silicon and comes in a rectangular package style with flange mount for isolated case connection.
1075 ns
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