Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FS3L30R07W2H3FB11BPSA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Nominal Turn Off Time (toff): 350 ns; Transistor Application: POWER CONTROL;
ISOLATED
45 A
650 V
COMPLEX
R-XUFM-X32
12
32
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
UL APPROVED
NO
UPPER
POWER CONTROL
SILICON
350 ns
88 ns
FS3L50R07W2H3FB11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;
75 A
346 ns
84 ns
FZ2400R12HE4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3560 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: POWER CONTROL;
3560 A
1200 V
R-PUFM-X9
3
9
PLASTIC/EPOXY
1320 ns
880 ns
IFS150B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 41; No. of Elements: 6;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X41
6
41
640 ns
240 ns
IFS75B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 185 ns;
R-XUFM-X34
34
UL RECOGNIZED
570 ns
185 ns
DF200R12PT4B6BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 300 A; Transistor Application: POWER CONTROL;
300 A
6.4 V
20 V
R-XUFM-X20
20
150 Cel
-40 Cel
1100 W
407 ns
225 ns
2.1 V
FD1000R33HE3KBOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
3300 V
-50 Cel
N-Channel
9600 W
3550 ns
1150 ns
3.1 V
FD1200R17KE3KNOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1600 A
1700 V
SINGLE WITH BUILT-IN DIODE
R-XUFM-X7
1
7
2100 ns
1050 ns
FD300R12KS4B5HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1950 W; Maximum Collector Current (IC): 370 A; No. of Elements: 1;
370 A
6.5 V
125 Cel
1950 W
590 ns
180 ns
3.75 V
FD400R12KE3B5HOSA1
Infineon's FD400R12KE3B5HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 580A max collector current. Featuring a single configuration with built-in diode, it has a turn on time of 400ns and turn off time of 830ns. Ideal for high-power applications requiring fast switching capabilities in industrial machinery and power electronics.
580 A
R-XUFM-X5
5
830 ns
400 ns
FD401R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 3150 W; Maximum Collector Current (IC): 650 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn Off Time (toff): 1210 ns;
650 A
3150 W
1210 ns
550 ns
FF400R12KE3B2HOSA1
FF400R12KE3B2HOSA1 by Infineon is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.15V, and IC of 580A. Ideal for high-power applications requiring fast switching capabilities up to 125°C, it features a max VCE of 1200V and power dissipation of 2000W.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
2
2000 W
760 ns
345 ns
2.15 V
FF800R17KP4B2NOSA2
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X10; Transistor Element Material: SILICON;
1200 A
SEPARATE, 2 ELEMENTS
R-XUFM-X10
10
1650 ns
790 ns
FP06R12W1T4B3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Nominal Turn Off Time (toff): 565 ns;
12 A
94 W
565 ns
95 ns
2.25 V
FS150R17N3E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 835 W; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
835 W
1240 ns
280 ns
2.3 V
FZ1600R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Peak Reflow Temperature (C): NOT SPECIFIED;
2600 A
12500 W
1360 ns
490 ns
FZ800R12KS4B2NOSA1
FZ800R12KS4B2NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1200A max collector current. It has a complex configuration, 660ns turn-off time, and 225ns turn-on time. Ideal for high-power applications requiring fast switching capabilities in industrial equipment and power electronics systems.
660 ns
FZ800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1220 ns; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
1300 A
6600 W
1220 ns
440 ns
FZ800R45KL3B5NOSA2
FZ800R45KL3B5NOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 4500V VCEsat, 9000W power dissipation, and 7350ns turn-off time. Ideal for power control applications, it features a complex configuration in a rectangular package with flange mount style for high-power operations up to 125°C.
4500 V
6.6 V
R-PUFM-X7
9000 W
7350 ns
2.85 V
FZ1200R17KE3B2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 8950 W; Maximum Collector Current (IC): 1900 A; Maximum Operating Temperature: 125 Cel; Maximum VCEsat: 2.45 V; Case Connection: ISOLATED;
1900 A
8950 W
1900 ns
900 ns
2.45 V
FZ1200R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1950 A; Maximum VCEsat: 3.1 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
1950 A
460 ns
FZ1600R17KE3B2NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2400 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2400 A
FZ2400R17HE4B9NPSA1
N-Channel; Maximum Power Dissipation (Abs): 15500 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: ISOLATED; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
15500 W
FZ3600R17KE3B2NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 20000 W; Maximum Collector Current (IC): 4800 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
4800 A
R-XUFM-X9
20000 W
FZ600R17KE3S4HOSA1
Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
840 A
1200 ns
IFS100B12N3E4_B39
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
100 A
175 Cel
515 W
Not Qualified
Insulated Gate BIP Transistors
610 ns
210 ns
IHW15N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;
COLLECTOR
30 A
TO-247AD
R-PSFM-T3
357 W
THROUGH-HOLE
SINGLE
432 ns
IHW20N120R2
IHW20N120R2 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. With a nominal turn-off time of 526ns, it is ideal for applications requiring high power dissipation up to 330W in industrial settings. The package style is flange mount with through-hole terminals, making it suitable for various power electronics applications.
40 A
330 W
526 ns
IHW30N100R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 412 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;
60 A
1000 V
TO-247AC
e3
412 W
TIN
988.4 ns
IHW30N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247AD;
390 W
IHW30N90R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
900 V
454 W
IKD06N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;
600 V
5.7 V
TO-252
R-PSSO-G2
SMALL OUTLINE
100 W
YES
GULL WING
335 ns
22 ns
IKD10N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;
20 A
150 W
428 ns
24 ns
IKD15N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;
260
250 W
430 ns
26 ns
FF600R12IS4F
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;
600 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
3700 W
630 ns
270 ns
SIGC109T120R3
Infineon's SIGC109T120R3 is an N-CHANNEL IGBT with a max voltage of 1200V and max current of 100A. Ideal for POWER CONTROL applications, it has a turn-off time of 610ns and turn-on time of 330ns. Suitable for surface mount with a max operating temp of 150°C.
R-XUUC-N
UNCASED CHIP
NO LEAD
330 ns
IHP10T120
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 769 ns;
16 A
TO-220AB
138 W
MATTE TIN
MOTOR CONTROL
769 ns
69 ns
FD200R65KF2-K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3800 W; Maximum Collector Current (IC): 1000 A; Maximum VCEsat: 4.9 V;
1000 A
6300 V
3800 W
6500 ns
1120 ns
4.9 V
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
LOW CONDUCTION LOSS
8 A
75 W
342 ns
20 ns
FD1600/1200R17KF6C_B2
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2600 A; Package Body Material: UNSPECIFIED; Transistor Element Material: SILICON;
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
360 ns
FZ1800R17HP4_B29
FZ1800R17HP4_B29 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector Current (IC) of 1800A and Max Collector-Emitter Voltage of 1700V. Its complex configuration and high power dissipation make it suitable for demanding industrial environments.
1800 A
13000 W
1860 ns
IKWH30N65WR5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 650 V;
4.8 V
TO-247
190 W
416 ns
61 ns
1.7 V
DF120R12W2H3B27BOMA1
Infineon's DF120R12W2H3B27BOMA1 IGBT features 1200V VCEsat, 50A IC, and 180W power dissipation. Ideal for high-power applications like motor drives, renewable energy systems, and industrial automation due to its N-CHANNEL polarity and fast switching times.
50 A
180 W
60 ns
2.4 V
F3L15R12W2H3B27BOMA1
Infineon's F3L15R12W2H3B27BOMA1 IGBT is N-CHANNEL with 12 elements, VCEsat of 2.4V, and toff of 355ns. Ideal for power control applications, it has a max VCE of 1200V, IC of 20A, and ton of 67ns. Operating from -40 to +150 °C, UL approved for reliability.
145 W
355 ns
67 ns
FS150R12KT4B9BOSA1
FS150R12KT4B9BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max voltage of 1200V, turn off time of 525ns, and turn on time of 196ns. Ideal for power control applications due to its isolated case connection and silicon material composition.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X33
33
525 ns
196 ns
TDB6HK180N16RRBOSA1
TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.
140 A
R-XUFM-X29
29
410 ns
190 ns
2.2 V
F4-50R07W2H3_B51
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel;
65 A
R-XUFM-X28
4
28
215 W
34 ns
FD-DF80R12W1H3_B52
N-Channel; Maximum Power Dissipation (Abs): 215 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;
320 ns
43 ns
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