Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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F4150R17ME4B11BPSA1
Infineon Technologies
F4150R17ME4B11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max collector-emitter voltage of 1700V and can handle a max collector current of 230A. Ideal for power control applications with a nominal turn-off time of 780ns and turn-on time of 270ns.
ISOLATED
230 A
1700 V
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X13
4
13
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
UL RECOGNIZED
NO
UPPER
POWER CONTROL
SILICON
780 ns
270 ns
F4250R17MP4B11BPSA1
Infineon's F4250R17MP4B11BPSA1 is a N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max collector-emitter voltage of 1700V and can handle a max collector current of 370A. Ideal for power control applications due to its fast turn-off time of 1030ns and turn-on time of 480ns.
370 A
1030 ns
480 ns
FZ2400R17HP4B28BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 3; Terminal Position: UPPER;
COMPLEX
R-PUFM-X9
1
3
9
PLASTIC/EPOXY
UL APPROVED
1800 ns
710 ns
FZ3600R17HE4PHPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 9; Transistor Application: POWER CONTROL; Minimum Operating Temperature: -40 Cel;
2245 ns
1075 ns
IKQ100N60TAXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 160 A; Maximum Collector-Emitter Voltage: 600 V;
160 A
600 V
SINGLE WITH BUILT-IN DIODE
5.7 V
20 V
TO-247
R-PSFM-T3
175 Cel
714 W
AEC-Q101
THROUGH-HOLE
SINGLE
393 ns
83 ns
2 V
IKQ120N60TAXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; JEDEC-95 Code: TO-247;
833 W
398 ns
84 ns
IKW30N60TAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;
COLLECTOR
60 A
382 ns
50 ns
IKW40N65F5AXKSA1
IKW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 30ns ton. It is used for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and AEC-Q101 reference standard compliance.
74 A
650 V
200 ns
30 ns
IKW40N65H5AXKSA1
IKW40N65H5AXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications, it has a toff of 204ns and ton of 32ns. Operating b/w -40 to 175°C, it features a VCE(max) of 650V and VGE(th) of 4.8V.
4.8 V
250 W
204 ns
32 ns
2.1 V
IFF300B17N2E4PB11BPSA1
Infineon Technologies' IFF300B17N2E4PB11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and max current of 400A for POWER CONTROL applications. Features include toff of 830ns, ton of 340ns, UL RECOGNIZED standard compliance.
400 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X26
2
26
830 ns
340 ns
IFS100B12N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Minimum Operating Temperature: -40 Cel; Terminal Form: UNSPECIFIED;
150 A
1200 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X34
6
34
610 ns
210 ns
IFS100B17N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; No. of Terminals: 34; Reference Standard: UL RECOGNIZED;
260 ns
IFS150B12N3E4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
220 A
6.35 V
R-XUFM-X41
41
150 Cel
750 W
640 ns
240 ns
FZ1200R17HE4PHPSA1
FZ1200R17HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 2 elements, and 7 terminals. Ideal for power control applications, it offers a turn-off time of 1760ns and turn-on time of 955ns. The package style is flange mount with plastic/epoxy body material.
R-PUFM-X7
7
1760 ns
955 ns
FZ1200R45HL3BPSA1
FZ1200R45HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4500V max collector-emitter voltage. It has a complex configuration, 6670ns turn-off time, and 1100ns turn-on time. Ideal for power control applications, this device features a plastic/epoxy package body and operates from -40°C.
4500 V
IEC-1287
6670 ns
1100 ns
FZ1600R17HP4B21BOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;
1710 ns
690 ns
FZ2400R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Elements: 3;
2100 ns
760 ns
FZ2400R17HE4PB9HPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 760 ns; Nominal Turn Off Time (toff): 2100 ns;
FF500R17KE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn Off Time (toff): 890 ns; No. of Terminals: 7; Package Body Material: UNSPECIFIED;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
890 ns
310 ns
FS450R12OE4PBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Transistor Application: POWER CONTROL; Minimum Operating Temperature: -40 Cel;
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X29
29
680 ns
290 ns
IGZ75N65H5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 119 A; Minimum Operating Temperature: -40 Cel; No. of Elements: 1;
119 A
R-PSFM-T4
e3
TIN
415 ns
37 ns
IKZ75N65EH5XKSA1
Infineon IKZ75N65EH5XKSA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 90A, and Ptot of 395W. Ideal for POWER CONTROL applications due to its fast ton of 37ns and low toff of 415ns. Operates in temperatures from -40°C to 175°C, making it suitable for various industrial power systems.
90 A
395 W
IKZ75N65NH5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 90 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
485 ns
71 ns
FF225R17ME4PBPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1700 V;
340 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
1500 ns
350 ns
FF300R17KE4PHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-XUFM-X5; Transistor Element Material: SILICON; Transistor Application: POWER CONTROL;
6.4 V
R-XUFM-X5
930 ns
355 ns
2.3 V
FF300R17ME4PBPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
375 A
1520 ns
405 ns
FF450R12ME4PBOSA1
FF450R12ME4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 675A, and turn-off time of 740ns. Ideal for applications requiring high power switching in industrial settings.
675 A
740 ns
FF450R17ME4PBOSA1
FF450R17ME4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode and thermistor. It is used for POWER CONTROL applications, with a max operating temperature of 175°C and a max collector-emitter voltage of 1700V.
600 A
1600 ns
380 ns
FF600R12ME4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; Nominal Turn Off Time (toff): 770 ns; JESD-30 Code: R-XUFM-X7;
995 A
770 ns
FF600R17ME4PBOSA1
FF600R17ME4PBOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1700V and can handle a max collector current of 950A. Ideal for power control applications due to its fast turn on time of 320ns and turn off time of 980ns.
950 A
980 ns
320 ns
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
20 A
R-XUFM-X23
23
500 ns
108 ns
FP15R12W1T4PBPSA1
FP15R12W1T4PBPSA1 by Infineon is an N-CHANNEL IGBT with 7 elements, max. collector current of 28A, and max. collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 495ns and nominal turn on time of 120ns. The transistor's complex configuration and isolated case connection make it suitable for high-power operations at up to 175°C.
28 A
495 ns
120 ns
FP35R12KT4PBPSA1
FP35R12KT4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and nominal turn-off time of 620ns. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.
620 ns
FP50R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FP75R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
R-XUFM-X35
35
FZ400R12KS4PHOSA1
FZ400R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 510A. It has a turn-off time of 590ns and turn-on time of 180ns, making it suitable for high-power applications like motor drives and renewable energy systems. The package style is flange mount with isolated case connection.
510 A
5
590 ns
180 ns
F4100R06KL4BOSA1
N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; No. of Elements: 4; Package Body Material: UNSPECIFIED;
130 A
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X24
24
36 ns
F4200R06KL4BOSA1
N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 225 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X26;
225 A
330 ns
230 ns
FP10R12YT3B4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 70 ns;
16 A
540 ns
70 ns
FS15R06XL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: UPPER; Case Connection: ISOLATED;
R-XUFM-X16
16
135 ns
29 ns
DDB6U180N16RRB11BPSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; JESD-30 Code: R-XUFM-X26; Terminal Position: UPPER;
140 A
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
DF900R12IP4DVBOSA1
DF900R12IP4DVBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It features a built-in diode, thermistor, and UL approval. Ideal for applications requiring high power switching with -40°C min operating temp and 1300ns turn-off time.
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X10
10
GENERAL PURPOSE
1300 ns
370 ns
FS450R17OE4PBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Elements: 6; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
FS500R17OE4DBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 740 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn On Time (ton): 330 ns;
740 A
1080 ns
FS75R12KE3B9BOSA1
FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
105 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
DDB6U134N16RRB11BPSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
70 A
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X19
19
F3L300R12MT4PB22BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
450 A
600 ns
F3L300R12MT4PB23BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Case Connection: ISOLATED; Transistor Application: POWER CONTROL;
280 ns
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