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Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 1,063

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IFF2400P17AE4BPSA1 by Infineon Technologies

IFF2400P17AE4BPSA1

Infineon Technologies

Infineon's IGBT, mfgpartno: IFF2400P17AE4BPSA1, features N-Channel polarity with VCEsat of 2.3V and max VCE of 1700V. Ideal for high-power applications in industries like automotive and renewable energy due to its SILICON material and -40 to 150 °C operating temperature range.

ISOLATED

1700 V

1

150 Cel

-40 Cel

N-Channel

SILICON

2.3 V

IFF2400P17LE4BPSA1 by Infineon Technologies

IFF2400P17LE4BPSA1

Infineon Technologies

N-Channel; Maximum Collector-Emitter Voltage: 1700 V; Maximum VCEsat: 2.3 V; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; Case Connection: ISOLATED;

ISOLATED

1700 V

1

150 Cel

-40 Cel

N-Channel

SILICON

2.3 V

FS820R08A6P2BBPSA1 by Infineon Technologies

FS820R08A6P2BBPSA1

Infineon Technologies

Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.

ISOLATED

820 A

750 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

714 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1110 ns

380 ns

1.35 V

SIGC28T60EX1SA4 by Infineon Technologies

SIGC28T60EX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V; Reference Standard: IEC-62258-3;

600 V

SINGLE

6.5 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

IEC-62258-3

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.85 V

SIGC84T120R3LEX1SA7 by Infineon Technologies

SIGC84T120R3LEX1SA7

Infineon Technologies

N-Channel; Maximum VCEsat: 2.1 V; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum Operating Temperature: -55 Cel;

1200 V

6.5 V

20 V

175 Cel

-55 Cel

NOT SPECIFIED

N-Channel

NOT SPECIFIED

SILICON

2.1 V

FS75R12KT4B15BPSA1 by Infineon Technologies

FS75R12KT4B15BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 75 A; No. of Terminals: 28;

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

R-XUFM-X28

6

28

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

385 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.15 V

FS100R12KT4PB11BPSA1 by Infineon Technologies

FS100R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;

ISOLATED

100 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-XUFM-X25

6

25

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

515 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

490 ns

185 ns

2.1 V