Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FS75R07N2E4B11BOSA1
Infineon Technologies
Infineon FS75R07N2E4B11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 650V and turn off time of 320ns. Ideal for power control applications, UL approved with flange mount package style.
ISOLATED
650 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
6
25
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
UL APPROVED
NO
UPPER
POWER CONTROL
SILICON
320 ns
45 ns
FS75R12KT4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 25; Package Body Material: UNSPECIFIED;
1200 V
490 ns
185 ns
FS75R12W2T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 107 A; Terminal Position: UPPER; Transistor Element Material: SILICON;
107 A
COMPLEX
R-XUFM-X18
18
FZ1200R33KL2CB5NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2300 A; Maximum Collector-Emitter Voltage: 3300 V; No. of Elements: 3;
2300 A
3300 V
R-XUFM-X9
3
9
4250 ns
1400 ns
FZ1800R12HP4B9NPSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; Nominal Turn Off Time (toff): 1330 ns; Package Body Material: UNSPECIFIED;
2700 A
PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
1330 ns
720 ns
FZ1800R17KE3B2NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2850 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X9;
2850 A
1700 V
1
1900 ns
900 ns
FZ2400R12HP4B9NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3550 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
3550 A
1440 ns
880 ns
FZ2400R12KE3B9NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3200 A; Case Connection: ISOLATED; Nominal Turn On Time (ton): 890 ns;
3200 A
1140 ns
890 ns
FZ400R33KL2CB5NOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 750 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X5;
750 A
SINGLE WITH BUILT-IN DIODE
R-XUFM-X5
5
IFS100B12N3E4B31BOSA1
Infineon's IFS100B12N3E4B31BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, current sensing resistor, and thermistor. It has a max VCEsat of 2.1V and nominal turn off time of 610ns. Ideal for power control applications due to its high power dissipation of 515W and max collector-emitter voltage of 1200V.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
6.4 V
20 V
R-XUFM-X34
34
150 Cel
-40 Cel
515 W
610 ns
210 ns
2.1 V
DF75R12W1H4FB11BOMA1
N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 125 Cel;
50 A
6.5 V
125 Cel
N-Channel
230 W
500 ns
58 ns
2.65 V
FD600R17KE3B2NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Case Connection: ISOLATED; Package Style (Meter): FLANGE MOUNT;
950 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
2
10
FD600R17KE3KB5NOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4300 W; Maximum Collector Current (IC): 950 A; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum VCEsat: 2.45 V;
4300 W
Insulated Gate BIP Transistors
2.45 V
FD600R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 975 A; Maximum VCEsat: 3.1 V; Case Connection: ISOLATED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
975 A
4800 W
1220 ns
470 ns
3.1 V
FD800R17KE3B2NOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; No. of Terminals: 7; Package Shape: RECTANGULAR;
1200 A
R-XUFM-X7
7
FD800R33KF2CKNOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7; Nominal Turn On Time (ton): 480 ns;
1300 A
480 ns
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
1390 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X12
12
PLASTIC/EPOXY
6250 W
760 ns
FF1200R17KP4B2NOSA2
Infineon Technologies' FF1200R17KP4B2NOSA2 is a N-CHANNEL IGBT with 1700V VCE, 1700A IC, and 2380ns toff. Ideal for power control applications due to its separate configuration with built-in diode elements. Rectangular package style with flange mount and isolated case connection.
1700 A
2380 ns
1060 ns
FF450R12ME4B11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 2250 W; Maximum Collector Current (IC): 675 A; Case Connection: ISOLATED;
675 A
R-XUFM-X11
11
2250 W
740 ns
290 ns
FF450R17ME4B11BOSA1
Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.
600 A
2500 W
1600 ns
380 ns
2.3 V
FF600R07ME4B11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Elements: 2; JESD-30 Code: R-XUFM-X11;
700 A
570 ns
250 ns
FF600R12ME4B11BPSA1
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
995 A
UL RECOGNIZED
770 ns
310 ns
FF600R17KE3B2NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
FF600R17KF6CB2NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 975 A; Nominal Turn Off Time (toff): 1220 ns; Transistor Application: POWER CONTROL;
FF600R17ME4B11BOSA1
Infineon Technologies' FF600R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications with VCEsat of 2.3V and IC of 950A. Operates at -40 to 150 °C, UL APPROVED for reliability in high-power systems.
4050 W
980 ns
FF650R17IE4DB2BOSA1
Infineon Technologies' FF650R17IE4DB2BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It offers VCEsat of 2.45V, IC of 930A, and Pmax of 4150W. Ideal for power control applications due to its high voltage rating (1700V) and fast switching times (ton:765ns, toff:1870ns).
930 A
4150 W
1870 ns
765 ns
FF800R17KE3B2NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
FF800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1240 ns; Nominal Turn On Time (ton): 540 ns; Maximum Gate-Emitter Voltage: 20 V;
1240 ns
540 ns
FP100R07N3E4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
R-XUFM-X43
43
370 ns
100 ns
FP100R12KT4B11BOSA1
Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
R-XUFM-X35
35
620 ns
FP10R06W1E3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V;
16 A
600 V
R-XUFM-X23
23
260 ns
26 ns
FP10R12W1T4B11BOMA1
Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
20 A
108 ns
FP10R12W1T4B3BOMA1
Infineon Technologies' FP10R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCE of 1200V, IC of 20A, and toff of 500ns. Ideal for power control applications due to its built-in diode and thermistor, it offers fast ton at 108ns.
R-XUFM-X21
21
FP150R07N3E4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UPPER; Package Body Material: UNSPECIFIED; No. of Terminals: 43;
450 ns
180 ns
FP15R06W1E3B11BOMA1
Infineon's FP15R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 22A max collector current. Ideal for power control applications, it features a complex configuration, 260ns turn off time (toff), and 29ns turn on time (ton).
22 A
29 ns
FP15R12W1T4B11BOMA1
Infineon Technologies' FP15R12W1T4B11BOMA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 28A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (495ns) and turn-on time (120ns). Package style: FLANGE MOUNT.
28 A
495 ns
120 ns
FP15R12W1T4B3BOMA1
Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.
R-XUFM-X20
20
FP20R06W1E3B11BOMA1
Infineon Technologies' FP20R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 600V VCE, 27A IC, and 250ns toff. Ideal for power control applications due to its complex configuration and UL approval.
27 A
37 ns
FP25R12KT4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Case Connection: ISOLATED; Reference Standard: UL APPROVED;
160 W
2.15 V
FP25R12KT4B15BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 24; Terminal Form: UNSPECIFIED; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X24
24
FP25R12W2T4B11BOMA1
FP25R12W2T4B11BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 39A max collector current. It has a complex configuration, 7 elements, and is used for power control applications. With a nominal turn-off time of 520ns and turn-on time of 47ns, it features a rectangular package style with flange mount.
39 A
520 ns
47 ns
FP30R06W1E3B11BOMA1
Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.
37 A
245 ns
42 ns
FP35R12KT4B15BOSA1
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
210 W
FP35R12W2T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
54 A
510 ns
43 ns
FP50R07N2E4B11BOSA1
FP50R07N2E4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 31 terminals, and a max IC of 70 A. It has a VCE of 650 V and toff of 265 ns. Ideal for power control applications due to its fast ton of 43 ns and UL approval.
70 A
R-XUFM-X31
31
265 ns
FP50R07U1E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V;
75 A
274 ns
40 ns
FP50R12KT4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 620 ns; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
FP50R12KT4GB15BOSA1
Infineon Technologies' FP50R12KT4GB15BOSA1 is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 620ns turn-off time. Ideal for power control applications, it features a complex configuration and UL approval in a rectangular package with 35 terminals.
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