Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FP75R12KT3BOSA1
Infineon Technologies
Infineon Technologies' FP75R12KT3BOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 105A, and max. collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and turn on time of 340ns, ideal for power control applications at up to 150°C operating temperature.
ISOLATED
105 A
1200 V
COMPLEX
R-XUFM-X35
7
35
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
NO
UPPER
POWER CONTROL
SILICON
610 ns
340 ns
FS100R06KE3BOSA1
FS100R06KE3BOSA1 by Infineon: N-CHANNEL IGBT with 6 elements, 370ns toff, and 100ns ton. Used in bridge configurations for applications requiring high voltage (600V) and temperature (175°C) tolerance.
600 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6
175 Cel
370 ns
100 ns
FS100R07N2E4BOSA1
Infineon FS100R07N2E4BOSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has VCEsat of 1.95V, toff of 370ns, and Pmax of 335W. Ideal for power control applications due to its high voltage rating (650V) and UL approval for reliability.
650 V
6.5 V
20 V
R-XUFM-X28
28
-40 Cel
335 W
UL APPROVED
1.95 V
FS100R07N3E4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 650 V; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 35;
FS100R07PE4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Case Connection: ISOLATED; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
R-XUFM-X20
20
110 ns
FS100R12KS4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; JESD-30 Code: R-XUFM-X39; No. of Terminals: 39;
130 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X39
39
390 ns
190 ns
FS100R12KT3BOSA1
FS100R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V, nominal turn off time of 610ns, and can handle a max collector current of 140A. This IGBT is commonly used in applications requiring high power switching such as motor drives and inverters due to its fast turn on/off times and high current capacity.
140 A
FS100R12KT4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
R-XUFM-X25
25
490 ns
185 ns
FS100R12PT4BOSA1
FS100R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a max voltage of 1200V, current of 135A, and turn off time of 600ns. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities.
135 A
R-XUFM-X13
13
600 ns
FS100R17PE4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; No. of Terminals: 13;
1700 V
1240 ns
280 ns
FS10R06VE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; JESD-30 Code: R-XUFM-X13; Maximum Collector-Emitter Voltage: 600 V;
16 A
1
260 ns
26 ns
FS10R12VT3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 16 A; No. of Terminals: 11; JESD-30 Code: R-XUFM-X11;
R-XUFM-X11
11
540 ns
62 ns
FS150R06KE3BOSA1
FS150R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 600V, current of 150A, and turn off time of 450ns. Ideal for applications requiring high power efficiency and temperature resistance like industrial motor drives.
150 A
450 ns
180 ns
FS150R07N3E4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn On Time (ton): 180 ns; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;
FS150R12KE3GBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 810 ns; Package Shape: RECTANGULAR;
200 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X29
29
810 ns
400 ns
FS150R12KE3BOSA1
FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
FS150R12PT4BOSA1
FS150R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current rating of 200A, and turn off time of 600ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode & thermistor.
FS150R17KE3GBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 240 A; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;
240 A
1300 ns
366 ns
FS150R17PE4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn On Time (ton): 280 ns; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FS15R12VT3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 24 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
24 A
590 ns
72 ns
FS200R07PE4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
690 ns
200 ns
FS200R12PT4BOSA1
FS200R12PT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements and built-in diode and thermistor. It is used for power control applications, with a max collector-emitter voltage of 1200V and a max collector current of 280A.
280 A
FS20R06VE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
25 A
R-XUFM-W13
WIRE
250 ns
320 ns
FS20R06W1E3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
35 A
R-XUFM-X15
15
57 ns
FS225R12OE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 350 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
350 A
6.4 V
1250 W
570 ns
230 ns
2.15 V
FS225R17KE3BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; JESD-30 Code: R-XUFM-X29; Terminal Position: UPPER;
340 A
375 ns
FS225R17KE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Maximum Collector-Emitter Voltage: 1700 V; No. of Elements: 6;
1500 ns
350 ns
FS225R17OE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1450 W; Maximum Collector Current (IC): 350 A; Package Body Material: UNSPECIFIED;
1450 W
870 ns
310 ns
2.3 V
FS25R12W1T4BOMA1
FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.
45 A
R-XUFM-X23
23
505 ns
80 ns
FS300R12KE3BOSA1
FS300R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, max IC of 500A, and toff of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems due to its max VCE of 1200V and fast ton of 400ns.
500 A
FS300R12KE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Terminals: 29; Package Shape: RECTANGULAR;
450 A
720 ns
240 ns
FS300R12OE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1650 W; Maximum Collector Current (IC): 460 A; Minimum Operating Temperature: -40 Cel;
460 A
1650 W
650 ns
2.1 V
FS300R17KE3BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; JESD-30 Code: R-XUFM-X29; Maximum Operating Temperature: 150 Cel;
375 A
384 ns
FS300R17KE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Terminal Form: UNSPECIFIED; Transistor Application: POWER CONTROL;
1520 ns
405 ns
FS300R17OE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1850 W; Maximum Collector Current (IC): 450 A; Minimum Operating Temperature: -40 Cel;
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
1850 W
YES
910 ns
385 ns
FS30R06W1E3BOMA1
FS30R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, max. collector current of 45A, and turn off time of 355ns. It is used for power control applications, featuring a max operating temp. of 175°C and max. collector-emitter voltage of 600V in a rectangular package style with flange mount.
355 ns
52 ns
FS35R12KT3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Package Body Material: UNSPECIFIED; No. of Elements: 6;
55 A
140 ns
FS35R12W1T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 65 A; No. of Elements: 6; Case Connection: ISOLATED;
65 A
520 ns
FS450R12KE3BOSA1
FS450R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, 1200V max voltage, and 600A max current. It has a toff of 810ns and ton of 400ns. Ideal for high-power applications requiring fast switching capabilities in industries like renewable energy and industrial motor drives.
600 A
FS450R12KE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 675 A; Nominal Turn Off Time (toff): 740 ns; JESD-30 Code: R-XUFM-X29;
675 A
740 ns
290 ns
FS450R12OE4BOSA1
Infineon's FS450R12OE4BOSA1 is an N-CHANNEL IGBT with 6 elements, 1200V VCEsat, and 660A IC. Ideal for power control applications, it features a 2250W max power dissipation, -40 to 150 °C operating temp range, and UL approval.
660 A
2250 W
680 ns
FS450R17KE3BOSA1
FS450R17KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, max IC of 605A, and toff of 1300ns. It is used in power electronics applications requiring high voltage (1700V) and current handling capabilities. The device features a flange mount package style, isolated case connection, and silicon transistor element material for efficient performance.
605 A
FS450R17KE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Terminal Form: UNSPECIFIED; Transistor Application: POWER CONTROL;
1600 ns
380 ns
FS450R17OE4BOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 2400 W; Maximum Collector Current (IC): 630 A; Package Body Material: UNSPECIFIED;
630 A
2400 W
1100 ns
FS50R06W1E3BOMA1
Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
70 A
FS50R12W2T4BOMA1
Infineon's FS50R12W2T4BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 83A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (490ns) and high operating temperature (175°C). Package style: FLANGE MOUNT, configuration: COMPLEX.
83 A
FS75R07N2E4BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; Reference Standard: UL APPROVED;
R-XUFM-X19
19
45 ns
FS75R12KE3GBOSA1
FS75R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V, collector current of 100A, and turn-off time of 610ns. Ideal for applications requiring high power switching such as motor drives and inverters due to its silicon transistor element material and isolated case connection.
100 A
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