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Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 1,063

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SGP15N60XKSA1 by Infineon Technologies

SGP15N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SGW15N60FKSA1 by Infineon Technologies

SGW15N60FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SKW25N120FKSA1 by Infineon Technologies

SKW25N120FKSA1

Infineon Technologies

SKW25N120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 46A max collector current. It has a built-in diode, ideal for power control applications. With a turn-off time of 862ns and turn-on time of 86ns, it operates at up to 150°C temperature.

COLLECTOR

46 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

862 ns

86 ns

IKW15T120FKSA1 by Infineon Technologies

IKW15T120FKSA1

Infineon Technologies

IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

720 ns

85 ns

SKP15N60XKSA1 by Infineon Technologies

SKP15N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Nominal Turn On Time (ton): 54 ns; JEDEC-95 Code: TO-220AB;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

315 ns

54 ns

SKW15N60FKSA1 by Infineon Technologies

SKW15N60FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Case Connection: COLLECTOR;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

315 ns

54 ns

BSM100GAL120DLCKHOSA1 by Infineon Technologies

BSM100GAL120DLCKHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 205 A; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;

ISOLATED

205 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

480 ns

110 ns

SKW30N60FKSA1 by Infineon Technologies

SKW30N60FKSA1

Infineon Technologies

SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

IHW30N60TFKSA1 by Infineon Technologies

IHW30N60TFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

187 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

382 ns

50 ns

IHW15T120FKSA1 by Infineon Technologies

IHW15T120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 85 ns; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

720 ns

85 ns

IKP03N120H2XKSA1 by Infineon Technologies

IKP03N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Application: POWER CONTROL;

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IKW03N120H2FKSA1 by Infineon Technologies

IKW03N120H2FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IKW08T120FKSA1 by Infineon Technologies

IKW08T120FKSA1

Infineon Technologies

IKW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and nominal turn-on time of 66ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

710 ns

66 ns

SKW15N120FKSA1 by Infineon Technologies

SKW15N120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

683 ns

68 ns

SKW30N60HSFKSA1 by Infineon Technologies

SKW30N60HSFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Case Connection: COLLECTOR; Transistor Element Material: SILICON;

COLLECTOR

41 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

301 ns

39 ns

BSM200GA120DLCHOSA1 by Infineon Technologies

BSM200GA120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn On Time (ton): 190 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

190 ns

BSM50GB60DLCHOSA1 by Infineon Technologies

BSM50GB60DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; Nominal Turn Off Time (toff): 151 ns;

ISOLATED

75 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

151 ns

52 ns

BSM20GP60BOSA1 by Infineon Technologies

BSM20GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn On Time (ton): 100 ns; Package Style (Meter): FLANGE MOUNT;

ISOLATED

35 A

600 V

COMPLEX

R-XUFM-X24

7

24

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

310 ns

100 ns

SIGC25T60NCX1SA5 by Infineon Technologies

SIGC25T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 29 ns;

40 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

BSM300GB60DLCHOSA1 by Infineon Technologies

BSM300GB60DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 176 ns;

ISOLATED

375 A

600 V

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

402 ns

176 ns

SIGC18T60UNX1SA2 by Infineon Technologies

SIGC18T60UNX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; No. of Elements: 1; Package Body Material: UNSPECIFIED;

20 A

600 V

SINGLE

R-XUUC-N2

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

100 ns

23.5 ns

BSM200GA120DLCSHOSA1 by Infineon Technologies

BSM200GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

190 ns

SIGC07T60NCX1SA1 by Infineon Technologies

SIGC07T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: NO LEAD; No. of Elements: 1;

8 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

BSM15GP60BOSA1 by Infineon Technologies

BSM15GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 400 ns;

ISOLATED

100 A

600 V

COMPLEX

R-XUFM-X24

7

24

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

400 ns

140 ns

BSM200GB60DLCHOSA1 by Infineon Technologies

BSM200GB60DLCHOSA1

Infineon Technologies

Infineon's BSM200GB60DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring a toff of 326ns and ton of 229ns. With a max voltage of 600V and current of 230A, it is ideal for high-power applications like industrial motor drives and renewable energy systems.

ISOLATED

230 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

326 ns

229 ns

BSM50GP60GBOSA1 by Infineon Technologies

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR; No. of Elements: 7;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

BSM200GD60DLCBOSA1 by Infineon Technologies

BSM200GD60DLCBOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 226 A; Qualification: Not Qualified; Transistor Element Material: SILICON;

ISOLATED

226 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X19

6

19

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

326 ns

229 ns

SIGC42T60NCX1SA5 by Infineon Technologies

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; JESD-30 Code: S-XUUC-N4; No. of Elements: 1;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

160 ns

55 ns

BSM75GP60BOSA1 by Infineon Technologies

BSM75GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;

ISOLATED

100 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

400 ns

140 ns

BSM400GA120DLCHOSA1 by Infineon Technologies

BSM400GA120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 625 A; No. of Terminals: 5; Nominal Turn Off Time (toff): 650 ns;

ISOLATED

625 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

BSM200GA120DN2HOSA1 by Infineon Technologies

BSM200GA120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 550 A; Terminal Position: UPPER; Qualification: Not Qualified;

ISOLATED

550 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

630 ns

210 ns

BSM10GP60BOSA1 by Infineon Technologies

BSM10GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 24; Nominal Turn Off Time (toff): 315 ns;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

SIGC18T60NCX1SA6 by Infineon Technologies

SIGC18T60NCX1SA6

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

30 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC12T60NCX1SA5 by Infineon Technologies

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 135 ns; Terminal Position: UPPER;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

BSM100GB60DLCHOSA1 by Infineon Technologies

BSM100GB60DLCHOSA1

Infineon Technologies

Infineon's BSM100GB60DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 180ns turn-off time, and 130A collector current. It operates up to 150°C, has a max voltage of 600V, and features a built-in diode. Ideal for power electronics applications requiring high efficiency and fast switching capabilities.

ISOLATED

130 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

180 ns

37 ns

BSM30GP60BOSA1 by Infineon Technologies

BSM30GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

SIGC25T60UNX1SA1 by Infineon Technologies

SIGC25T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;

60 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

151 ns

29 ns

BSM300GA120DN2HOSA1 by Infineon Technologies

BSM300GA120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 430 A; Nominal Turn On Time (ton): 210 ns; No. of Terminals: 4;

ISOLATED

430 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

680 ns

210 ns

BSM100GP60BOSA1 by Infineon Technologies

BSM100GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 135 A; Package Body Material: UNSPECIFIED; Qualification: Not Qualified;

ISOLATED

135 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

330 ns

110 ns

BSM50GP60BOSA1 by Infineon Technologies

BSM50GP60BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 105 ns;

ISOLATED

70 A

600 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

315 ns

105 ns

FZ400R12KE3HOSA1 by Infineon Technologies

FZ400R12KE3HOSA1

Infineon Technologies

FZ400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 650A IC, and 830ns toff. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its single configuration with built-in diode and silicon transistor element material.

ISOLATED

650 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

830 ns

400 ns

BSM150GB60DLCHOSA1 by Infineon Technologies

BSM150GB60DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 180 A; Nominal Turn On Time (ton): 155 ns; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

180 A

600 V

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

260 ns

155 ns

BSM75GB60DLCHOSA1 by Infineon Technologies

BSM75GB60DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: UNSPECIFIED;

ISOLATED

100 A

600 V

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

205 ns

90 ns

BSM300GA120DLCSHOSA1 by Infineon Technologies

BSM300GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Terminal Position: UPPER; Package Shape: RECTANGULAR;

ISOLATED

570 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

650 ns

190 ns

IHW30N90TFKSA1 by Infineon Technologies

IHW30N90TFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR; Terminal Position: SINGLE;

HIGH SPEED

COLLECTOR

60 A

900 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

NOT APPLICABLE

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

691 ns

82 ns

IHW30N100TFKSA1 by Infineon Technologies

IHW30N100TFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

30 A

1000 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

NOT APPLICABLE

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

702 ns

90 ns

SKP10N60AXKSA1 by Infineon Technologies

SKP10N60AXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Qualification: Not Qualified;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

224 ns

40 ns

IKW40N120T2FKSA1 by Infineon Technologies

IKW40N120T2FKSA1

Infineon Technologies

IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.

COLLECTOR

75 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

600 ns

60 ns