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SKW25N120FKSA1

Infineon Technologies

SKW25N120FKSA1 by Infineon Technologies

SKW25N120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 46A max collector current. It has a built-in diode, ideal for power control applications. With a turn-off time of 862ns and turn-on time of 86ns, it operates at up to 150°C temperature.

Median Price

$9.266

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 114 parts In-Stock

1+ parts

$8.620

100+ parts

$8.100

1k+ parts

$7.330

10k+ parts

-

114

$8.620

$8.100

$7.330

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Flip Electronics (Authorized)

USA . 600 parts In-Stock

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-

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600

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Arrow

USA . 180 parts In-Stock

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$9.266

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180

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$9.266

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Avnet

USA . 180 parts In-Stock

1+ parts

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180

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Verical

USA . 150 parts In-Stock

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100+ parts

$9.986

1k+ parts

$8.597

10k+ parts

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150

-

$9.986

$8.597

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 468 parts In-Stock

1+ parts

$8.189

100+ parts

-

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-

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468

$8.189

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$10.809

100+ parts

-

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100

$10.809

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-

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TME

Poland . 8 parts In-Stock

1+ parts

$16.700

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-

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8

$16.700

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Vyrian

USA . 8,538 parts In-Stock

1+ parts

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8,538

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Flip Electronics

USA . 600 parts In-Stock

1+ parts

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600

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Chip Stock

USA . 304 parts In-Stock

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304

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Distributors (Availability)

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Corohmni

South Africa . 138 parts In-Stock

1+ parts

$0.323

100+ parts

-

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138

$0.323

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Modulus Dynamics

Lithuania . 7,241 parts In-Stock

1+ parts

$0.881

100+ parts

$0.846

1k+ parts

$0.811

10k+ parts

-

7,241

$0.881

$0.846

$0.811

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Aztec Data Supply Inc.

USA . 2,713 parts In-Stock

1+ parts

$1.940

100+ parts

-

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2,713

$1.940

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Corphita

USA . 544 parts In-Stock

1+ parts

$7.758

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544

$7.758

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Continental Prestige Electronics

USA . 4,379 parts In-Stock

1+ parts

$10.809

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$10.592

4,379

$10.809

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$10.592

Netroflash

USA . 50 parts In-Stock

1+ parts

$10.809

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50

$10.809

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-

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Ampacity Inc.

Singapore . 188 parts In-Stock

1+ parts

$15.950

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188

$15.950

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AZTECH Wire

Italy . 1,083 parts In-Stock

1+ parts

$16.980

100+ parts

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1,083

$16.980

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Microchip USA

USA . 169 parts In-Stock

1+ parts

$29.504

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169

$29.504

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Perfect Parts

USA . 1,344 parts In-Stock

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1,344

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Argo Parts USA

USA . 388 parts In-Stock

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388

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Glotronic Ltd.

UK . 163 parts In-Stock

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163

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Overview

Unlock the power of innovation with the SKW25N120FKSA1 by Infineon Technologies. As a leader in semiconductor technology, Infineon delivers top-quality Insulated Gate Bipolar Transistors that are reliable and efficient. Ideal for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for added convenience. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 46A, this transistor ensures optimal performance in various electronic systems. Trust Infineon to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to damage, providing longevity and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuitry and enhances performance, making this product more efficient and cost-effective.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and functionality in high-power systems.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various electronic systems, offering flexibility in design and installation.

No. of Terminals: 3

Having 3 terminals enables easy connection and installation, simplifying the setup process for users.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this product can withstand elevated temperatures without performance degradation, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating makes this IGBT suitable for high-voltage applications, providing versatility and compatibility with a wide range of systems.

Maximum Collector Current (IC): 46 A

The high collector current rating allows for the handling of large currents, making this product ideal for power control applications that require high current capabilities.

Nominal Turn On Time (ton): 86 ns

The fast turn-on time of 86 nanoseconds ensures quick response and efficient operation, making this IGBT suitable for applications requiring rapid switching speeds.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKW25N120FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

862 ns

Nominal Turn On Time (ton):

86 ns

Trade Compliance

SKW25N120FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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