Loading...

Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 1,063

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM50GB120DN2HOSA1 by Infineon Technologies

BSM50GB120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 78 A; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED;

ISOLATED

78 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

450 ns

100 ns

BSM150GB170DLCHOSA1 by Infineon Technologies

BSM150GB170DLCHOSA1

Infineon Technologies

Infineon's BSM150GB170DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 930 ns turn off time. It operates at max 1700V and 300A, suitable for high-power applications like industrial motor drives due to its fast switching speed and high collector current capacity.

ISOLATED

300 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

930 ns

200 ns

BSM400GA170DLCHOSA1 by Infineon Technologies

BSM400GA170DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; JESD-30 Code: R-XUFM-X5; No. of Terminals: 5;

ISOLATED

800 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

930 ns

200 ns

SIGC42T60UNX1SA1 by Infineon Technologies

SIGC42T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;

50 A

600 V

SINGLE

S-XUUC-N3

1

3

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

370 ns

79 ns

IHW20T120FKSA1 by Infineon Technologies

IHW20T120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; No. of Elements: 1;

COLLECTOR

40 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

790 ns

82 ns

SGB06N60ATMA1 by Infineon Technologies

SGB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SGB20N60ATMA1 by Infineon Technologies

SGB20N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Nominal Turn Off Time (toff): 313 ns;

LOW CONDUCTION LOSS

COLLECTOR

40 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

313 ns

66 ns

SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

BSM200GB120DLCHOSA1 by Infineon Technologies

BSM200GB120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 420 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;

ISOLATED

420 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

SKA06N60XKSA1 by Infineon Technologies

SKA06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;

LOW CONDUCTION LOSS

ISOLATED

9 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

318 ns

41 ns

SKP06N60XKSA1 by Infineon Technologies

SKP06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

318 ns

41 ns

SKP02N120XKSA1 by Infineon Technologies

SKP02N120XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-609 Code: e3;

COLLECTOR

6.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGP02N60XKSA1 by Infineon Technologies

SGP02N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

354 ns

34 ns

SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGI02N120XKSA1 by Infineon Technologies

SGI02N120XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

6.2 A

1200 V

SINGLE

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

375 ns

40 ns

SGP02N120XKSA1 by Infineon Technologies

SGP02N120XKSA1

Infineon Technologies

Infineon's SGP02N120XKSA1 is an N-CHANNEL IGBT with 1200V VCE, 6.2A IC, and 375ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and SILICON material. Operates at up to 150°C with THROUGH-HOLE terminals in a RECTANGULAR package style.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGP07N120XKSA1 by Infineon Technologies

SGP07N120XKSA1

Infineon Technologies

Infineon's SGP07N120XKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 16.5A max collector current. Ideal for power control applications, it has a turn-off time of 520ns and turn-on time of 56ns, operating up to 150°C.

COLLECTOR

16.5 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

520 ns

56 ns

IKP15N60TXKSA1 by Infineon Technologies

IKP15N60TXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;

HIGH SPEED

COLLECTOR

30 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

291 ns

32 ns

IGP10N60TXKSA1 by Infineon Technologies

IGP10N60TXKSA1

Infineon Technologies

Infineon's IGP10N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. Ideal for power control applications, it has a turn-on time of 21ns and turn-off time of 296ns. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

20 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

296 ns

21 ns

SGD06N60BUMA1 by Infineon Technologies

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Nominal Turn On Time (ton): 41 ns; Qualification: Not Qualified;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

SGP06N60XKSA1 by Infineon Technologies

SGP06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SKP04N60XKSA1 by Infineon Technologies

SKP04N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.4 A; Case Connection: COLLECTOR; Maximum Operating Temperature: 150 Cel;

LOW CONDUCTION LOSS

COLLECTOR

9.4 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

368 ns

38 ns

FF300R06KE3HOSA1 by Infineon Technologies

FF300R06KE3HOSA1

Infineon Technologies

FF300R06KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 600V max. collector-emitter voltage. It has a nominal turn off time of 600ns and can handle up to 400A collector current. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.

ISOLATED

400 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

600 ns

190 ns

IGB03N120H2ATMA1 by Infineon Technologies

IGB03N120H2ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

BSM300GB120DLCHOSA1 by Infineon Technologies

BSM300GB120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 625 A; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;

ISOLATED

625 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

SKB15N60ATMA1 by Infineon Technologies

SKB15N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 31 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

315 ns

54 ns

SGB07N120ATMA1 by Infineon Technologies

SGB07N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 16.5 A; Case Connection: COLLECTOR; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

16.5 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

520 ns

56 ns

SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.

COLLECTOR

6.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

IKP01N120H2XKSA1 by Infineon Technologies

IKP01N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; No. of Elements: 1; Transistor Application: POWER CONTROL;

COLLECTOR

3.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

493 ns

20.9 ns

SKB04N60ATMA1 by Infineon Technologies

SKB04N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 9.4 A; Nominal Turn Off Time (toff): 368 ns; Maximum Operating Temperature: 150 Cel;

LOW CONDUCTION LOSS

COLLECTOR

9.4 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

368 ns

38 ns

FF150R12KT3GHOSA1 by Infineon Technologies

FF150R12KT3GHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 225 A; No. of Terminals: 7; Transistor Element Material: SILICON;

ISOLATED

225 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

SKB02N60ATMA1 by Infineon Technologies

SKB02N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW CONDUCTION LOSS;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

354 ns

34 ns

SGB10N60AATMA1 by Infineon Technologies

SGB10N60AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

224 ns

40 ns

SKB06N60HSATMA1 by Infineon Technologies

SKB06N60HSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSSO-G2; Nominal Turn Off Time (toff): 245 ns;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

245 ns

23 ns

SKB06N60ATMA1 by Infineon Technologies

SKB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Nominal Turn Off Time (toff): 318 ns;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

SGB15N120ATMA1 by Infineon Technologies

SGB15N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Package Shape: RECTANGULAR;

COLLECTOR

30 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

683 ns

68 ns

SKB10N60AATMA1 by Infineon Technologies

SKB10N60AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Additional Features: LOW CONDUCTION LOSS; Package Style (Meter): SMALL OUTLINE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

224 ns

40 ns

SKB15N60HSATMA1 by Infineon Technologies

SKB15N60HSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 27 A; JESD-30 Code: R-PSSO-G2; Nominal Turn Off Time (toff): 252 ns;

COLLECTOR

27 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

MOTOR CONTROL

SILICON

252 ns

27 ns

FF400R12KE3HOSA1 by Infineon Technologies

FF400R12KE3HOSA1

Infineon Technologies

FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.

ISOLATED

580 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

760 ns

345 ns

FS100R12KT4GBOSA1 by Infineon Technologies

FS100R12KT4GBOSA1

Infineon Technologies

FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.

ISOLATED

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

570 ns

165 ns

BSM100GB120DLCHOSA1 by Infineon Technologies

BSM100GB120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;

ISOLATED

200 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

FP100R12KT4BOSA1 by Infineon Technologies

FP100R12KT4BOSA1

Infineon Technologies

FP100R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 620ns turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.

ISOLATED

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

620 ns

210 ns

IGP03N120H2XKSA1 by Infineon Technologies

IGP03N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; JEDEC-95 Code: TO-220AB;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IGW03N120H2FKSA1 by Infineon Technologies

IGW03N120H2FKSA1

Infineon Technologies

IGW03N120H2FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 9.6A. It has a nominal turn-off time of 403ns and nominal turn-on time of 16.1ns, making it ideal for power control applications requiring fast switching capabilities at temperatures up to 150°C.

COLLECTOR

9.6 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

FS150R12KT4BOSA1 by Infineon Technologies

FS150R12KT4BOSA1

Infineon Technologies

FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.

ISOLATED

150 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

750 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

605 ns

165 ns

2.1 V

FF200R12KT4HOSA1 by Infineon Technologies

FF200R12KT4HOSA1

Infineon Technologies

Infineon Technologies' FF200R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a BUILT-IN DIODE. It has a max voltage of 1200V, max current of 320A, and turn-off time of 700ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.

ISOLATED

320 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

700 ns

680 ns

IHW40T120FKSA1 by Infineon Technologies

IHW40T120FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;

COLLECTOR

75 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

700 ns

92 ns

IKW15N120T2FKSA1 by Infineon Technologies

IKW15N120T2FKSA1

Infineon Technologies

IKW15N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 626ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

626 ns

61 ns