Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SIGC81T60NCX1SA3
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Package Style (Meter): UNCASED CHIP; Nominal Turn On Time (ton): 125 ns;
100 A
600 V
SINGLE
S-XUUC-N10
1
10
150 Cel
UNSPECIFIED
SQUARE
UNCASED CHIP
NOT SPECIFIED
N-CHANNEL
Not Qualified
YES
NO LEAD
UPPER
POWER CONTROL
SILICON
235 ns
125 ns
DDB6U75N16W1RBOMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 69 A; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
ISOLATED
69 A
1200 V
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X27
27
175 Cel
RECTANGULAR
FLANGE MOUNT
NO
630 ns
137 ns
FF600R12IP4BOSA1
FF600R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It is designed for POWER CONTROL applications with a max voltage of 1200V and operating temperature of 175°C. Featuring a turn-off time of 1050ns and turn-on time of 370ns, this rectangular package transistor is ideal for high-power systems.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X7
2
7
1050 ns
370 ns
FF900R12IP4BOSA2
FF900R12IP4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and can operate at temperatures up to 175°C. Ideal for power control applications due to its fast turn on time of 370ns and turn off time of 1300ns.
1300 ns
FF900R12IP4DBOSA2
Infineon's FF900R12IP4DBOSA2 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1200V and operates up to 175°C. With turn off time of 1300ns and turn on time of 370ns, this rectangular package transistor offers efficient performance in various power systems.
FP25R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
39 A
COMPLEX
R-XUFM-X23
23
520 ns
47 ns
FP35R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Transistor Element Material: SILICON; No. of Elements: 7;
54 A
510 ns
43 ns
IGW15N120H3FKSA1
IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.
30 A
TO-247
R-PSFM-T3
e3
3
PLASTIC/EPOXY
TIN
THROUGH-HOLE
49 ns
IHY15N120R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn Off Time (toff): 460 ns;
SINGLE WITH BUILT-IN DIODE
460 ns
IHY20N120R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Peak Reflow Temperature (C): 260;
40 A
260
538 ns
IGW30N60TFKSA1
IGW30N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 382ns and nominal turn-on time of 50ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 175°C.
FAST SWITCHING
COLLECTOR
60 A
TO-247AC
382 ns
50 ns
IGP50N60TXKSA1
IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.
TO-220AB
396 ns
60 ns
IGW50N60TFKSA1
IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
IGW08T120FKSA1
IGW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and a turn-on time of 66ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
16 A
TO-247AD
710 ns
66 ns
IGW15T120FKSA1
IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
720 ns
85 ns
IGW25T120FKSA1
IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
50 A
790 ns
82 ns
IGW30N100TFKSA1
Infineon's IGW30N100TFKSA1 is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 569ns toff. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates up to 175°C.
1000 V
569 ns
54 ns
IGW75N60TFKSA1
IGW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 150A IC, and 175°C max temp. Ideal for power control applications due to its single configuration and fast ton of 69ns. The package style is flange mount with through-hole terminals.
150 A
401 ns
69 ns
IHW25N120R2FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-609 Code: e3;
463.6 ns
IHY30N160R2XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSFM-T3;
1600 V
675 ns
IKI04N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
8 A
TO-262AA
R-PSIP-T3
IN-LINE
207 ns
21 ns
IKP04N60TXKSA1
IKP04N60TXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 8A max collector current. It has a turn-off time of 207ns and turn-on time of 21ns, ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals, suitable for flange mount installations at up to 175°C operating temperature.
HIGH SWITCHING SPEED
SGB30N60ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; Maximum Collector-Emitter Voltage: 600 V; JESD-30 Code: R-PSSO-G2;
LOW CONDUCTION LOSS
41 A
TO-263AB
R-PSSO-G2
SMALL OUTLINE
GULL WING
391 ns
78 ns
SGP10N60AXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
20 A
MOTOR CONTROL
224 ns
40 ns
SGW10N60AFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
SGP15N120XKSA1
SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.
683 ns
68 ns
SGW15N120FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; No. of Elements: 1; Case Connection: COLLECTOR;
SGW20N60FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;
313 ns
SGP20N60HSXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 36 A; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
36 A
30 ns
SGW20N60HSFKSA1
Infineon's SGW20N60HSFKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 36A max collector current, and 30ns turn on time. Ideal for motor control applications due to its single configuration and through-hole terminals. Operating at up to 150°C, it offers a fast switching speed of 235ns.
SGW30N60FKSA1
SGW30N60FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 41A. It has a nominal turn-off time of 391ns and a turn-on time of 78ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.
SGP30N60HSXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
301 ns
39 ns
SGW30N60HSFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 41 A; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
SGW25N120FKSA1
Infineon's SGW25N120FKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 46A max collector current. Ideal for power control applications, it has a single configuration, 862ns turn-off time, and operates up to 150°C.
46 A
862 ns
86 ns
SGW50N60HSFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Application: MOTOR CONTROL; Case Connection: COLLECTOR;
79 ns
IHW40N60RFFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON; No. of Terminals: 3;
80 A
228 ns
IKW15N120H3FKSA1
IKW15N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures durability in high-temp environments up to 175°C.
BSM50GD170DLBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-XUFM-X21; Package Style (Meter): FLANGE MOUNT;
1700 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X21
6
21
930 ns
200 ns
FD600R12KF4NOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X5; Package Body Material: UNSPECIFIED;
600 A
R-XUFM-X5
5
1150 ns
800 ns
FF600R12KF4NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
FZ800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;
800 A
GENERAL PURPOSE
1600 ns
1000 ns
FD400R33KF2CNOSA1
Infineon's FD400R33KF2CNOSA1 is an N-CHANNEL IGBT with 3300V VCE, 660A IC, and 4800W power dissipation. Ideal for power control applications due to its 1900ns turn-off time and 480ns turn-on time. Package style is flange mount with isolated case connection.
660 A
3300 V
20 V
4800 W
Insulated Gate BIP Transistors
1900 ns
480 ns
4.25 V
FD800R33KF2CNOSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;
1300 A
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
IHW30N160R2FKSA1
IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
IGW40N60H3FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T3; Nominal Turn On Time (ton): 48 ns;
249 ns
48 ns
FS200R12KT4RBOSA1
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
280 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
UL RECOGNIZED
600 ns
190 ns
IGA30N60H3XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; No. of Elements: 1; Nominal Turn On Time (ton): 40 ns;
18 A
262 ns
IGP20N60H3XKSA1
IGP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT transistor with a max voltage of 600V and max current of 40A. It has a turn on time of 31ns and turn off time of 241ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 175°C.
241 ns
31 ns
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