Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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F450R12KS4BOSA1
Infineon Technologies
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Nominal Turn On Time (ton): 190 ns; Nominal Turn Off Time (toff): 390 ns;
ISOLATED
70 A
1200 V
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X24
4
24
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
UL RECOGNIZED
NO
UPPER
POWER CONTROL
SILICON
390 ns
190 ns
F475R06W1E3BOMA1
Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
100 A
600 V
COMPLEX
R-XUFM-X11
11
330 ns
45 ns
F475R12KS4B11BOSA1
F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
UL APPROVED
F475R12KS4BOSA1
F475R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max VCEsat of 3.75V and a max collector-emitter voltage of 1200V, making it ideal for power control applications requiring high voltage handling capabilities. With a nominal turn-off time of 390ns and a max power dissipation of 500W, this rectangular package transistor offers efficient performance in various power control systems.
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.5 V
20 V
125 Cel
-40 Cel
500 W
3.75 V
FB20R06W1E3B11HOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 29 A; Maximum Gate-Emitter Voltage: 20 V;
29 A
R-XUFM-X22
7
22
150 Cel
94 W
250 ns
37 ns
2 V
FD1000R17IE4DB2BOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;
1390 A
1700 V
6.4 V
N-Channel
6250 W
1910 ns
830 ns
2.45 V
FD250R65KE3KNOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector-Emitter Voltage: 6500 V; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
6500 V
SINGLE WITH BUILT-IN DIODE
R-PUFM-X7
1
PLASTIC/EPOXY
8100 ns
1200 ns
FD600R06ME3S2BOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 9; Package Body Material: UNSPECIFIED;
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X9
9
960 ns
275 ns
FF1200R17KE3B2NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Terminal Form: UNSPECIFIED; No. of Elements: 2;
1700 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
2
10
2100 ns
1050 ns
FF200R12KT3EHOSA1
Infineon Technologies' FF200R12KT3EHOSA1 is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 580A, and turn-off time of 680ns. Ideal for power control applications due to its common emitter configuration and UL recognized standard.
580 A
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
680 ns
215 ns
FF225R12ME4B11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 320 A; Nominal Turn On Time (ton): 220 ns; Peak Reflow Temperature (C): NOT SPECIFIED;
320 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
600 ns
220 ns
FF300R06KE3B2HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 400 A; Maximum Gate-Emitter Voltage: 20 V;
400 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
940 W
1.9 V
FF300R07ME4B11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 390 A; Terminal Position: UPPER;
390 A
650 V
1100 W
525 ns
138 ns
1.95 V
FF300R12KE4B2HOSA1
Infineon's FF300R12KE4B2HOSA1 is a N-CHANNEL IGBT with 1200V VCE, 460A IC, and 800ns toff. Ideal for power control applications, it features series connected elements in a rectangular package with built-in diode. Recognized by UL, this transistor offers fast turn-on time of 325ns.
460 A
800 ns
325 ns
FF300R12KT3EHOSA1
FF300R12KT3EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 480A, and turn-off time of 680ns. Commonly used in power control applications due to its UL recognized reference standard and isolated case connection.
480 A
FF300R17ME4B11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Nominal Turn Off Time (toff): 1520 ns; Transistor Application: POWER CONTROL;
375 A
1520 ns
405 ns
FF400R12KT3EHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 580 A; No. of Terminals: 7; Terminal Form: UNSPECIFIED;
FS100R17N3E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 280 ns;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
6
35
600 W
1240 ns
280 ns
2.3 V
FS50R07W1E3B11ABOMA1
Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
R-XUFM-X18
18
FS75R07W2E3B11ABOMA1
Infineon Technologies' FS75R07W2E3B11ABOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 95A, and max. collector-emitter voltage of 650V. Ideal for power control applications due to its complex configuration and fast turn on/off times (44ns/258ns). Package style: Flange mount with isolated case connection.
95 A
258 ns
44 ns
IGC13T120T8LX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
SINGLE
6.3 V
R-XUUC-N2
175 Cel
UNCASED CHIP
YES
NO LEAD
2.07 V
IKD15N60RAATMA1
N-Channel; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 430 ns; Maximum Gate-Emitter Voltage: 20 V;
30 A
5.7 V
250 W
430 ns
26 ns
2.1 V
SGP30N60XKSA1
N-Channel; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 419 ns; Minimum Operating Temperature: -55 Cel; Maximum Gate-Emitter Voltage: 20 V;
60 A
5 V
-55 Cel
419 ns
93 ns
SIGC14T60SNCX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Nominal Turn Off Time (toff): 315 ns;
15 A
S-XUUC-N2
SQUARE
315 ns
54 ns
SIGC42T60NCX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4;
S-XUUC-N4
160 ns
55 ns
FP75R07N2E4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X31; Transistor Element Material: SILICON;
R-XUFM-X31
31
320 ns
FP75R12KT4B11BOSA1
FP75R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max VCE of 1200V. It has a toff of 620ns and ton of 210ns, making it ideal for power control applications. The transistor is UL approved and features a complex configuration in a rectangular package style with flange mount.
620 ns
210 ns
FP75R12KT4B15BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn Off Time (toff): 620 ns;
75 A
FS100R07N2E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Nominal Turn On Time (ton): 100 ns; JESD-30 Code: R-XUFM-X25;
R-XUFM-X25
25
370 ns
100 ns
FS100R07N3E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 100 ns;
FS100R12KT4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
515 W
490 ns
185 ns
FS100R12KT4GB11BOSA1
FS100R12KT4GB11BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max Vce of 1200V and toff of 570ns. Ideal for power control applications, this UL RECOGNIZED transistor offers fast ton of 165ns in a rectangular package with 35 terminals.
570 ns
165 ns
FS10R06VE3B2BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 260 ns;
16 A
R-XUFM-X15
15
260 ns
FS150R07N3E4B11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Body Material: UNSPECIFIED; No. of Terminals: 35; Terminal Position: UPPER;
450 ns
180 ns
FS150R12KT4B11BOSA1
FS150R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and a nominal turn-off time of 605ns. This power control transistor is designed for applications requiring fast switching speeds in bridge configurations.
605 ns
FS15R06VE3B2BOMA1
Infineon's FS15R06VE3B2BOMA1 is a N-CHANNEL IGBT with 6 elements, 600V max collector-emitter voltage, and 22A max collector current. Ideal for power control applications, it features a complex configuration, 260ns turn off time, and UL recognized standard.
22 A
29 ns
FS200R07N3E4RB11BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn Off Time (toff): 450 ns; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
FS200R12KT4RB11BOSA1
Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.
280 A
FS20R06VE3B2BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-XUFM-X15; Terminal Position: UPPER;
25 A
32 ns
FS20R06W1E3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Elements: 6; Terminal Form: UNSPECIFIED;
35 A
57 ns
FS25R12W1T4B11BOMA1
Infineon FS25R12W1T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 45A IC, and 205W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 505ns and UL approval. Operating from -40°C to 150°C, it features a complex configuration in a rectangular package with flange mount style.
45 A
205 W
505 ns
80 ns
2.25 V
FS30R06W1E3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 45 A; Transistor Application: POWER CONTROL;
150 W
355 ns
52 ns
FS35R12W1T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 65 A; No. of Terminals: 18; Transistor Element Material: SILICON;
65 A
520 ns
FS50R06W1E3B11BOMA1
Infineon FS50R06W1E3B11BOMA1 is a N-CHANNEL IGBT with 600V VCE, 70A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.
FS50R12KT4B11BOSA1
Infineon Technologies' FS50R12KT4B11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 490ns, and ton of 185ns. Ideal for power control applications due to its UL approval and isolated case connection in a flange mount package style.
FS50R12W2T4B11BOMA1
Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.
83 A
FS50R17KE3B17BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 82 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
82 A
R-XUFM-X19
19
1100 ns
FS6R06VE3B2BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 11 A; No. of Terminals: 15; JESD-30 Code: R-XUFM-X15;
11 A
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