Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AOT10B60D
Alpha & Omega Semiconductor
AOT10B60D by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 163W Pd. It operates up to 175°C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.
20 A
600 V
20 V
175 Cel
N-CHANNEL
163 W
Insulated Gate BIP Transistors
NO
GT20J341,S4X(S
Toshiba
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;
25 V
150 Cel
45 W
SIGC14T60NCX1SA7
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Nominal Turn On Time (ton): 28 ns; Maximum Collector-Emitter Voltage: 600 V;
SINGLE
S-XUUC-N2
1
2
UNSPECIFIED
SQUARE
UNCASED CHIP
NOT SPECIFIED
Not Qualified
YES
NO LEAD
UPPER
POWER CONTROL
SILICON
135 ns
28 ns
SIGC18T60SNCX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Terminal Form: NO LEAD; Qualification: Not Qualified;
313 ns
66 ns
BSM10GP120BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; No. of Elements: 7; Nominal Turn On Time (ton): 95 ns;
ISOLATED
1200 V
COMPLEX
R-XUFM-X24
e3
7
24
RECTANGULAR
FLANGE MOUNT
MATTE TIN
345 ns
95 ns
IGP10N60TXKSA1
Infineon's IGP10N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. Ideal for power control applications, it has a turn-on time of 21ns and turn-off time of 296ns. The package style is flange mount with through-hole terminals in a rectangular shape.
COLLECTOR
TO-220AB
R-PSFM-T3
3
PLASTIC/EPOXY
TIN
THROUGH-HOLE
296 ns
21 ns
SGB10N60AATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
LOW CONDUCTION LOSS
TO-263AB
R-PSSO-G2
SMALL OUTLINE
GULL WING
224 ns
40 ns
SKB10N60AATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Additional Features: LOW CONDUCTION LOSS; Package Style (Meter): SMALL OUTLINE;
SINGLE WITH BUILT-IN DIODE
SIGC18T60UNX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; No. of Elements: 1; Package Body Material: UNSPECIFIED;
R-XUUC-N2
100 ns
23.5 ns
SKP10N60AXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Qualification: Not Qualified;
SGP10N60AXKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
MOTOR CONTROL
SGW10N60AFKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
TO-247AC
FP10R12W1T4BOMA1
Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
R-XUFM-X23
23
500 ns
108 ns
STGB20V60F
STMicroelectronics
STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.
7 V
-55 Cel
167 W
173 ns
49 ns
2.2 V
STGP20V60F
STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.
FP10R12W1T4B11BOMA1
Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
FP10R12W1T4B3BOMA1
Infineon Technologies' FP10R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCE of 1200V, IC of 20A, and toff of 500ns. Ideal for power control applications due to its built-in diode and thermistor, it offers fast ton at 108ns.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X21
6
21
STGB10NB37LZ
STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.
VOLTAGE CLAMPING
375 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.4 V
245
125 W
Matte Tin (Sn) - annealed
30
AUTOMOTIVE IGNITION
17800 ns
860 ns
STGP10NB37LZ
STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.
NGB8206N
Onsemi
NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.
390 V
14000 ns
2.1 V
15 V
e0
235
150 W
8000 ns
TIN LEAD
18500 ns
6500 ns
NGB8206NTF4
NGB8206NTF4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and a Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. The transistor has a Nominal Turn Off Time of 18500ns and Nominal Turn On Time of 6500ns, suitable for fast switching requirements in automotive systems.
Tin/Lead (Sn80Pb20)
STGD10NC60KT4
STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.
ULTRA FAST
6.5 V
60 W
242 ns
23 ns
STGP10NC60K
STGP10NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and operates at up to 150 °C. Its fast switching times (ton: 23 ns, toff: 242 ns) enhance efficiency in various electronic systems.
STGF10NC60HD
STGF10NC60HD from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, 20A collector current, and fast switching times (ton: 19ns, toff: 247ns). Its compact flange mount design ensures efficient thermal management.
5.75 V
23 W
247 ns
19 ns
IKD10N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;
5.7 V
TO-252
428 ns
24 ns
STGP10NB60SFP
STGP10NB60SFP from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 31.5 W, and operates up to 150 °C. Its through-hole design ensures easy integration in various systems.
5 V
31.5 W
1160 ns
STGB10NB40LZT4
STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.
380 V
12000 ns
1570 ns
NGD8201NT4
NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.
440 V
7000 ns
2.3 V
115 W
STGD10NC60HDT4
STGD10NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 62W max power dissipation. Ideal for power control applications, it features a built-in diode, 247ns turn-off time, and operates up to 150°C.
TO-252AA
260
62 W
NGB8202NT4
NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.
NGD8205NT4
NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.
88 W
NGB8202NT4G
NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.
NGD8201NT4G
NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.
400 V
STGP10NC60H
STGP10NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and fast switching times (ton: 19 ns, toff: 247 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.
F3L15R12W2H3B27BOMA1
Infineon's F3L15R12W2H3B27BOMA1 IGBT is N-CHANNEL with 12 elements, VCEsat of 2.4V, and toff of 355ns. Ideal for power control applications, it has a max VCE of 1200V, IC of 20A, and ton of 67ns. Operating from -40 to +150 °C, UL approved for reliability.
R-XUFM-X34
12
34
-40 Cel
145 W
UL APPROVED
355 ns
67 ns
STGF10M65DF2
STGF10M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design ensures efficient thermal management in various electronic systems.
650 V
30 W
260 ns
27 ns
2 V
IKU10N60RXK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR; Maximum Collector-Emitter Voltage: 600 V;
TO-251
R-PSIP-T3
IN-LINE
IKD10N60RAATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Transistor Application: GENERAL PURPOSE; Terminal Form: GULL WING;
AEC-Q101
GENERAL PURPOSE
IKD10N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;
198 ns
2.5 V
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
FS15R06XL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: UPPER; Case Connection: ISOLATED;
R-XUFM-X16
16
29 ns
FP10R12W1T4PB11BPSA1
Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
SIGC10T60EX1SA5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Application: POWER CONTROL;
AIHD10N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
AIHD10N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Minimum Operating Temperature: -40 Cel;
IXYY8N90C3-TRL
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;
900 V
6 V
238 ns
39 ns
3 V
DF80R07W1H5FPB11BPSA1
DF80R07W1H5FPB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with a max VCEsat of 1.72V and collector-emitter voltage of 650V. Features fast turn-off time (124ns) and operates b/w -40 to 150°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
4.75 V
R-XUFM-X18
18
124 ns
17 ns
1.72 V
LGD8201ATI
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Package Style (Meter): SMALL OUTLINE;
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
24000 ns
9000 ns
1.9 V
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